US4924284A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of trench filling
Assignee: International Business Machines Corp
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Filing: 1988-01-20
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Granted: 1990-05-08
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Expires: 2008-01-20
Abstract
Abstract A method of simultaneously producing doped silicon filled trenches in areas where a substrate contact is to be produced and trench isolation in other areas. Borosilicate glass lines the sidewalls of those trenches where a contact is desired and undoped epitaxially grown silicon fills all the trenches. Subsequent heat processing causes the boron in the borosilicate to dope the epitaxial silicon in those trenches. In the other trenches, the silicon fill remains undoped except at the bottom where a channel stop exists, thereby forming isolation trenches. The contacts formed over the trenches may be formed by selectively deposition of a highly doped silicon into an opening that overlies a portion of the trench and the adjacent substrate surface.
Inventors
- 👤 Klaus D. Beyer
- 👤 Victor J. Silvestri
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:11
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; H10W20/00; H10W20/01; H10W20/021
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
70 words
An integrated circuit semiconductor structure comprising: a silicon substrate, a trench having substantially vertical sidewalls extending downward from a surface of said substrate, said trench filled with silicon; an insulator covering said substrate surface and only said trench sidewalls and having an opening that overlies a portion of said trench and an adjacent portion of said surface of said substrate; and a silicon material in said opening forming a contact.
Claim 2
Dependent Claim
70 words
An integrated circuit semiconductor structure comprising: a silicon substrate, a trench having substantially vertical sidewalls extending downward from a surface of said substrate, said trench filled with silicon; an insulator covering said substrate surface and only said trench sidewalls and having an opening that overlies a portion of said trench and an adjacent portion of said surface of said substrate; and a silicon material in said opening forming a contact.
Claim 3
Dependent Claim
10 words
The structure of claim 1 wherein polysilicon fills said trench.
Claim 4
Dependent Claim
12 words
The structure of claim 2 wherein said silicon material is doped polysilicon.
Claim 5
Dependent Claim
13 words
The structure of claim 2 wherein said silicon is material doped epitaxial silicon.
Claim 6
Dependent Claim
18 words
The structure of claim 2 wherein said silicon material is a combination of doped epitaxial silicon and polysilicon.
Claim 7
Dependent Claim
18 words
The structure of claim 1 wherein doped silicon fills said trench and said structure defines a substrate contact.
Claim 8
Dependent Claim
11 words
The structure of claim 6 wherein said doped silicon is polysilicon.
Claim 9
Dependent Claim
12 words
The structure of claim 6 wherein said doped silicon is epitaxial silicon.
Claim 10
Dependent Claim
17 words
The structure of claim 6 wherein said doped silicon is a combination of epitaxial silicon and polysilicon.
Claim 11
Dependent Claim
85 words
An integrated circuit structure comprising: a semiconductor substrate having a substantially vertical-walled trench extending downward from a surface of said substrate and filled with silicon; an insulative structure defining a contact zone overlapping a sidewall of said trench and an adjacent portion of said substrate surface, said insulative structure lining only sidewalls of said trench; and a silicon material in said contact zone overgrown on said trench and said substrate in said contact zone creating a contact that overlaps said trench and said substrate surface.
Claim 12
Dependent Claim
85 words
An integrated circuit structure comprising: a semiconductor substrate having a substantially vertical-walled trench extending downward from a surface of said substrate and filled with silicon; an insulative structure defining a contact zone overlapping a sidewall of said trench and an adjacent portion of said substrate surface, said insulative structure lining only sidewalls of said trench; and a silicon material in said contact zone overgrown on said trench and said substrate in said contact zone creating a contact that overlaps said trench and said substrate surface.
Claim 13
Dependent Claim
13 words
The circuit structure of claim 10 wherein said silicon material is doped polysilicon.
Claim 14
Dependent Claim
14 words
The circuit structure of claim 10 wherein said silicon material is doped epitaxial silicon.
Claim 15
Dependent Claim
19 words
The circuit structure of claim 10 wherein said silicon material is a combination of doped polysilicon and epitaxial silicon.
Claim 16
Dependent Claim
14 words
The circuit structure of claim 10 wherein said silicon filling said trench is polysilicon.
Claim 17
Dependent Claim
15 words
The circuit structure of claim 10 wherein said silicon filling said trench is epitaxial silicon.
Claim 18
Dependent Claim
85 words
An integrated circuit structure comprising: a semiconductor substrate having a substantially vertical-walled trench extending downward from a surface of said substrate and filled with monocrystalline silicon; an insulative structure defining a contact zone overlapping a sidewall of said trench and an adjacent portion of said substrate surface, said insulative structure lining sidewalls of said trench; and a conductive material in said contact zone overgrown on said trench and said substrate in said contact zone creating a contact that overlaps said trench and said substrate surface.
Claim 19
Dependent Claim
85 words
An integrated circuit structure comprising: a semiconductor substrate having a substantially vertical-walled trench extending downward from a surface of said substrate and filled with monocrystalline silicon; an insulative structure defining a contact zone overlapping a sidewall of said trench and an adjacent portion of said substrate surface, said insulative structure lining sidewalls of said trench; and a conductive material in said contact zone overgrown on said trench and said substrate in said contact zone creating a contact that overlaps said trench and said substrate surface.
Claim 20
Dependent Claim
13 words
The circuit structure of claim 16 wherein said conductive material is doped polysilicon.
Claim 21
Dependent Claim
14 words
The circuit structure of claim 16 wherein said conductive material is doped epitaxial silicon.
Claim 22
Dependent Claim
19 words
The circuit structure of claim 16 wherein said conductive material is a combination of doped polysilicon and epitaxial silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-07 | 1993-11-06 | 1994-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-07 | 1997-11-06 | 1998-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-07 | 2001-11-06 | 2002-05-08 | $7700.00 | Window Closed / Lapsed |