US4801989A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1987-02-19
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Granted: 1989-01-31
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Expires: 2007-02-19
Abstract
Abstract In a dynamic random access memory having a trench capacitor, a first conductive layer is formed on all of the inner surface of the trench except for a region adjacent to the opening portion of the trench, a dielectric layer is formed on the first conductive layer exposed in the trench and the surface of the semiconductor substrate, and a second conductive layer of the other conduction type is filled in the trench through the dielectric layer. The first conductive layer, the dielectric layer, and the second conductive layer constitute a storage capacitor. In this dynamic random access memory, a metal insulator semiconductor transistor is formed in the semiconductor substrate, a source or drain region of the transistor of the other conduction type is in contact with the second conductive layer through the dielectric layer, and the second conductive layer is connected with the source or drain region of the other conduction type.
Inventors
- 👤 Masao Taguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:17
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
158 words
A dynamic random access memory having a trench capacitor, said memory comprising: a semiconductor substrate of one conduction type; a trench formed in said semiconductor substrate; a first conductive layer formed on a deep portion of an inner surface of said trench and not being formed in a region close to an entrance of said trench; a dielectric layer being formed on said first conductive layer in said trench and being formed on said inner surface of said trench in said region close to said entrance of said trench; a second conductive layer filling in said trench through said dielectric layer; said first conductive layer, said dielectric layer, and said second conductive layer constituting a storage capacitor; and a metal insulator semiconductor transistor formed in said semiconductor substrate, having a source or drain region of another conduction type which is connected to said second conductive layer, said first conductive layer being isolated from said source or drain region.
Claim 2
Dependent Claim
158 words
A dynamic random access memory having a trench capacitor, said memory comprising: a semiconductor substrate of one conduction type; a trench formed in said semiconductor substrate; a first conductive layer formed on a deep portion of an inner surface of said trench and not being formed in a region close to an entrance of said trench; a dielectric layer being formed on said first conductive layer in said trench and being formed on said inner surface of said trench in said region close to said entrance of said trench; a second conductive layer filling in said trench through said dielectric layer; said first conductive layer, said dielectric layer, and said second conductive layer constituting a storage capacitor; and a metal insulator semiconductor transistor formed in said semiconductor substrate, having a source or drain region of another conduction type which is connected to said second conductive layer, said first conductive layer being isolated from said source or drain region.
Claim 3
Dependent Claim
30 words
A memory according to claim 1, wherein said second conductive layer is electrically connected with said source or drain region of the another conduction type through a third conductive layer.
Claim 4
Dependent Claim
32 words
A memory according to claim 1, wherein an upper end portion of said first conductive layer and a bottom level of said source or drain layer are separated by a predetermined distance.
Claim 5
Dependent Claim
16 words
A memory according to claim 3, wherein said predetermined distance is occupied by an insulator material.
Claim 6
Dependent Claim
22 words
A memory according to claim 1, wherein source or drain region is adjacent to said second conductive layer through said dielectric layer.
Claim 7
Dependent Claim
21 words
A memory according to claim 1, wherein said first conductive layer is in contact with said semiconductor substrate in said trench.
Claim 8
Dependent Claim
15 words
A memory according to claim 1, wherein said first conductive layer comprises a polycrystalline silicon.
Claim 9
Dependent Claim
28 words
A memory according to claim 1, wherein said dielectric layer has a larger thickness at said surface of said semiconductor substrate than that on said first conductive layer.
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JPS59213460A
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JPS6054472A
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EP0149799A2
Cited
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US4672410A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-31 | 1992-08-01 | 1993-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-31 | 1996-08-01 | 1997-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-31 | 2000-08-01 | 2001-01-31 | $7700.00 | Window Closed / Lapsed |