US5387555A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bonded wafer processing with metal silicidation
Assignee: Intersil Corp
•
Filing: 1992-09-03
•
Granted: 1995-02-07
•
Expires: 2012-09-03
Abstract
Abstract Low temperature silicon-on-insulator wafer bonding using a silicide bond formation reaction. Dielectric isolation with silicon dioxide, diamond, silicon nitride, and so forth yields buried resistors under trench isolated silicon islands. Buried dielectrics can be thermally susceptible films like diamond due to the low temperature of the bonding silicidation reaction. Bonding silicides also provide thermal dissipating layer between a buried diamond layer and a handle wafer for good overall thermal conductivity. Bonding silicides also act as diffusion barriers. The silicide bonding takes place in the presense of a liquid oxidizer such as aqueous solution of HNO 3 and H 2 O 2 .
Inventors
- 👤 Jack H. Linn
- 👤 Robert K. Lowry
- 👤 George V. Rouse
- 👤 James F. Buller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:52
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1914; H10W10/011; H10W10/014; H10W10/041; H10W10/17; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/147
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
72 words
A method of wafer bonding to produce a silicon-on-insulator structure, comprising the steps of: (a) providing a device wafer and a handle wafer; (b) joining a surface of said device wafer to a surface of said device wafer with silicide precursors therebetween; (c) providing a liquid oxidizer on one of said surfaces; and (d) heating said wafers in the presence of said liquid oxidizer wherein said wafers bond together through silicide formation.
Claim 2
Independent Claim
72 words
A method of wafer bonding to produce a silicon-on-insulator structure, comprising the steps of: (a) providing a device wafer and a handle wafer; (b) joining a surface of said device wafer to a surface of said device wafer with silicide precursors therebetween; (c) providing a liquid oxidizer on one of said surfaces; and (d) heating said wafers in the presence of said liquid oxidizer wherein said wafers bond together through silicide formation.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein: (a) said device wafer includes a silicon layer with a dielectric layer at said surface.
Claim 4
Dependent Claim
27 words
The method of claim 2, wherein: (a) said precursors include a layer of polysilicon on said dielectric layer and a layer of metal on said polysilicon layer.
Claim 5
Dependent Claim
17 words
The method of claim 2, wherein: (a) said dielectric is diamond; and (b) said metal is platinum.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein: (a) said device wafer is silicon; and (b) said handle wafer has a dielectric layer at said surface.
Claim 7
Dependent Claim
36 words
The method of claim 5, wherein: (a) said precursors include a layer of polysilicon on a layer of insulator on said surface of said device wafer and a layer of metal on said layer of polysilicon.
Claim 8
Dependent Claim
32 words
The method of claim 6, wherein: (a) said insulator is silicon dioxide; and (b) said metal is selected from the group consisting of platinum, cobalt, nickel, tungsten, titanium, tantalum, and combinations thereof.
Claim 9
Dependent Claim
22 words
The method of claim 1, further comprising the step of: (a) providing a liquid oxidizer comprising nitrogen on one of said surfaces.
References Cited (Backward Citations)
JPS62122148A
Cited
US4980306A
Cited
JPH02148821A
Cited
JPH02206118A
Cited
US5169472A
Cited
US5102821A
Cited
US5098861A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-02-06 | 1998-08-08 | 1999-02-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-02-06 | 2002-08-08 | 2003-02-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-02-06 | 2006-08-08 | 2007-02-07 | $7700.00 | Window Closed / Lapsed |