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US6555850B1
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Field-effect transistor
Assignee: Sumitomo Electric Industries Ltd
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Filing: 2000-02-17
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Granted: 2003-04-29
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Expires: 2020-02-17
Abstract
Abstract A field-effect transistor has a composite channel structure having a first channel layer containing GaInP semiconductor and a second channel layer containing GaAs semiconductor. When the electric field is low in the channel, a channel current is primarily conducted in the second channel layer. When the electric field is high, the electrons flowing in the second channel layer move through real space transition to the first channel layer. These electrons conduct in the channel primarily in the first channel layer. Since GaInP semiconductor has a wider forbidden bandwidth than that of GaAs semiconductor, the avalanche breakdown voltage of GaInP semiconductor is higher than that of GaAs semiconductor. When the electric field is high, the conduction electrons travel in this GaInP semiconductor layer. This also improves the avalanche breakdown voltage of the field-effect transistor.
Inventors
- 👤 Ryoji Sakamoto
- 👤 Shigeru Nakajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 05:48
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
105 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said first Ga x In 1−x As y P 1−y layer includes donor impurities, and said GaAs layer includes smaller donor impurity concentration than that of said first Ga x In 1−x As y P 1−y layer.
Claim 2
Dependent Claim
105 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said first Ga x In 1−x As y P 1−y layer includes donor impurities, and said GaAs layer includes smaller donor impurity concentration than that of said first Ga x In 1−x As y P 1−y layer.
Claim 3
Dependent Claim
27 words
A field-effect transistor according to claim 1 , further comprising: a first Al u Ga 1−u As layer (0≦u<1) provided between said substrate and said channel layer.
Claim 4
Dependent Claim
28 words
A field-effect transistor according to claim 1 , further comprising a second Al v Ga 1−v As layer (0≦v<1) provided between said gate electrode and said channel layer.
Claim 5
Dependent Claim
25 words
A filed-effect transistor according to claim 1 , wherein said channel layer comprises a Ga t In 1−t P layer (0<t<1) and a GaAs layer.
Claim 6
Dependent Claim
115 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said channel layer further comprises a second Ga p In 1−p As q P 1−q layer (0<p<1, 0<q<1), and said GaAs layer is provided between said first Ga x In 1−x As y P 1−y and said second Ga p In 1−p As q P 1−q layer.
Claim 7
Dependent Claim
115 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said channel layer further comprises a second Ga p In 1−p As q P 1−q layer (0<p<1, 0<q<1), and said GaAs layer is provided between said first Ga x In 1−x As y P 1−y and said second Ga p In 1−p As q P 1−q layer.
Claim 8
Dependent Claim
28 words
A field-effect transistor according to claim 5 , wherein said second Ga p In 1−p As q P 1−q layer is substantially lattice-matched with GaAs of said substrate.
Claim 9
Dependent Claim
27 words
A field-effect transistor according to claim 5 , further comprising: a first Al u Ga 1−u As layer (0≦u<1) provided between said substrate and said channel layer.
Claim 10
Dependent Claim
28 words
A field-effect transistor according to claim 5 , further comprising a second Al v Ga 1−v As layer (0≦v<1) provided between said gate electrode and said channel layer.
Claim 11
Dependent Claim
25 words
A filed-effect transistor according to claim 5 , wherein said channel layer comprises a Ga t In 1−t P layer (0<t<1) and a GaAs layer.
References Cited (Backward Citations)
JPS62208621A
Cited
US4987462A
Cited
US5148245A
Cited
US5116773A
Cited
US5077875A
Cited
US5206527A
Cited
US5508530A
Cited
US5436470A
Cited
US5331410A
Cited
JPH04326734A
Cited
JPH04326735A
Cited
EP0510705A2
Cited
US5286662A
Cited
US5331185A
Cited
EP0555886A2
Cited
US5446296A
Cited
US5453631A
Cited
JPH0684959A
Cited
JPH06236898A
Cited
US5479427A
Cited
US5734671A
Cited
EP0757392A1
Cited
US6326650B1
Cited
JPH09102600A
Cited
EP0803912A1
Cited
US6100542A
Cited
US6144049A
Cited
JPH10261653A
Cited
US6262444B1
Cited
US5838030A
Cited
US6037615A
Cited
US6316820B1
Cited
US6207976B1
Cited
US6177685B1
Cited
US6483135B1
Cited
US6307221B1
Cited
US6232624B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-04-28 | 2006-10-28 | 2007-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-04-28 | 2010-10-28 | 2011-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-04-28 | 2014-10-28 | 2015-04-29 | $7700.00 | Window Closed / Lapsed |