EP0803912A1
Expired / Lapsed
EP
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Field effect transistor
Assignee: Panasonic Holdings Corp
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Filing: 1996-11-07
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Granted: —
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Expires: 2016-11-07
Abstract
Abstract In a field effect transistor 100 , an InAlAs buffer layer 11 , an InGaAs channel layer 12 , an InAlAs spacer layer 13 , an AlGaAs carrier supplying layer 14 , an InAlAs Schottky layer 15 , and an InGaAs cap layer 16 are provided on an InP substrate 10 in this order. Furthermore, a source electrode 17s , a drain electrode 17d and a gate electrode 18 are formed on the layered structure at prescribed positions. The carrier supplying layer 14 is made of a material that does not cause the silicon, contained therein as a dopant, to be terminated by fluorine. Thus, the field effect transistor 100 having a high transconductance can be formed without causing decrease in a drain current.
Inventors
- 👤 Mitsuru Tanabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 08:37
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10D30/01; H10D30/015; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10D64/0125
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
65 words
A field effect transistor comprising a layered structure formed on a substrate, the layered structure including at least a channel layer, wherein the layered structure further includes a carrier supplying layer containing a dopant for supplying carriers to the channel layer, and the carrier supplying layer is made of a material that is not affected by fluorine (where the dopant is not terminated by fluorine).
Claim 2
Dependent Claim
29 words
A field effect transistor according to claim 1, wherein the carrier supplying layer is made of a material that does not cause the dopant to be terminated by fluorine.
Claim 3
Dependent Claim
26 words
A field effect transistor according to claim 1, wherein the carrier supplying layer is an Al x Ga 1-x As layer (0 ≤ x ≤ 1).
Claim 4
Dependent Claim
26 words
A field effect transistor according to claim 1, wherein the carrier supplying layer is an In x Ga 1-x As layer (0 ≤ x ≤ 1).
Claim 5
Dependent Claim
25 words
A field effect transistor according to claim 1, wherein the dopant of the carrier supplying layer is uniformly included in the entire carrier supplying layer.
Claim 6
Dependent Claim
13 words
A field effect transistor according to claim 5, wherein the dopant is silicon.
Claim 7
Dependent Claim
43 words
A field effect transistor according to claim 1, wherein the carrier supplying layer comprises a δ-dope layer where the dopant is deposited on the order of several atomic layers, and a pair of semiconductor layers provided so as to sandwich the δ-dope layer.
Claim 8
Dependent Claim
13 words
A field effect transistor according to claim 7, wherein the dopant is silicon.
Claim 9
Dependent Claim
74 words
A field effect transistor, comprising a layered structure which includes at least a Schottky layer and a channel layer on a substrate, wherein the Schottky layer is an InAlAs layer and the channel layer is an InGaAs layer, and the layered structure is provided with a carrier supplying layer containing a dopant for supplying carriers to the channel layer, the carrier supplying layer being made of a material that is not affected by fluorine.
Claim 10
Dependent Claim
29 words
A field effect transistor according to claim 9, wherein the carrier supplying layer is made of a material that does not cause the dopant to be terminated by fluorine.
Claim 11
Dependent Claim
26 words
A field effect transistor according to claim 9, wherein the carrier supplying layer is an Al x Ga 1-x As layer (0 ≤ x ≤ 1).
Claim 12
Dependent Claim
27 words
A field effect transistor according to claim 9, wherein the carrier supplying layer is an In x Ga 1-x As layer (0 ≤ x ≤ 1 ).
Claim 13
Dependent Claim
59 words
A field effect transistor according to claim 9, wherein the layered structure comprises: the InGaAs channel layer formed on the substrate; the carrier supplying layer formed on the InGaAs channel layer; and the InAlAs Schottky layer formed on the carrier supplying layer, and the dopant of the carrier supplying layer is uniformly included in the entire carrier supplying layer.
Claim 14
Dependent Claim
28 words
A field effect transistor according to claim 13, wherein the layered structure further comprises a spacer layer formed between the InGaAs channel layer and the carrier supplying layer.
Claim 15
Dependent Claim
13 words
A field effect transistor according to claim 14, wherein the dopant is silicon.
Claim 16
Dependent Claim
77 words
A field effect transistor according to claim 9, wherein the layered structure comprises: the InGaAs channel layer formed on the substrate; the carrier supplying layer formed on the InGaAs channel layer; and the InAlAs Schottky layer formed on the carrier supplying layer, and the carrier supplying layer comprises a δ-dope layer where the dopant is deposited on the order of several atomic layers, and a pair of semiconductor layers provided so as to sandwich the δ-dope layer.
Claim 17
Dependent Claim
28 words
A field effect transistor according to claim 16, wherein the layered structure further comprises a spacer layer formed between the InGaAs channel layer and the carrier supplying layer.
Claim 18
Dependent Claim
13 words
A field effect transistor according to claim 17, wherein the dopant is silicon.
Claim 19
Dependent Claim
42 words
A field effect transistor according to claim 9, wherein the layered structure comprises: the carrier supplying layer formed on the substrate; the InGaAs channel layer formed on the carrier supplying layer; and the InAlAs Schottky layer formed on the InGaAs channel layer.
Claim 20
Dependent Claim
25 words
A field effect transistor according to claim 19, wherein the dopant of the carrier supplying layer is uniformly included in the entire carrier supplying layer.
Claim 21
Dependent Claim
13 words
A field effect transistor according to claim 20, wherein the dopant is silicon.
Claim 22
Dependent Claim
43 words
A field effect transistor according to claim 19, wherein the carrier supplying layer comprises a δ-dope layer where the dopant is deposited on the order of several atomic layers, and a pair of semiconductor layers provided so as to sandwich the δ-dope layer.
Claim 23
Dependent Claim
13 words
A field effect transistor according to claim 22, wherein the dopant is silicon.
References Cited (Backward Citations)
No citation records indexed.
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