US6232624B1
Expired / Lapsed
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InPSb channel HEMT on InP for RF application
Assignee: The AT&T MVPD Group LLC
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Filing: 1999-07-12
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Granted: 2001-05-15
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Expires: 2019-07-12
Abstract
Abstract A high electron mobility transistor (HEMT) includes a substrate comprising indium phosphide and an optional buffer layer immediately adjacent the substrate. A channel layer immediately is adjacent the buffer layer, with the channel layer comprising indium phosphide antimonide and characterized by a formula of InPxSb(1-x), wherein x is about 0.85. The channel layer has a thickness of about 120 Angstroms. A Schottky layer is immediately adjacent the channel layer and a contact layer is immediately adjacent the Schottky layer. The transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2x106 cm/s.
Inventors
- 👤 Mehran Matloubian
- 👤 Daniel Docter
- 👤 Miroslav Micovic
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:24
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/85; H10D62/852; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/475; H10D30/4755
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
39 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a channel layer interfacing said substrate, said channel layer comprising indium phosphide antimonide; a Schottky layer interfacing said channel layer; and a contact layer interfacing said Schottky layer.
Claim 2
Dependent Claim
39 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a channel layer interfacing said substrate, said channel layer comprising indium phosphide antimonide; a Schottky layer interfacing said channel layer; and a contact layer interfacing said Schottky layer.
Claim 3
Dependent Claim
17 words
The transistor of claim 1 , further comprising a buffer layer intermediate said substrate and channel layer.
Claim 4
Dependent Claim
15 words
The transistor of claim 1 , wherein said channel layer is characterized as being strained.
Claim 5
Dependent Claim
29 words
The transistor of claim 1 , wherein said indium phosphide antimonide is characterized by a formula of InP x Sb (1−x) , wherein x is about 0.95 to 0.70.
Claim 6
Dependent Claim
19 words
The transistor of claim 1 , wherein said channel layer has a thickness of about 30 to 280 Angstroms.
Claim 7
Dependent Claim
49 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a channel layer interfacing said substrate, said channel layer comprising indium phosphide antimonide and having a thickness between about 30 to 280 Angstroms; a Schottky layer interfacing said channel layer; and a contact layer interfacing said Schottky layer.
Claim 8
Dependent Claim
49 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a channel layer interfacing said substrate, said channel layer comprising indium phosphide antimonide and having a thickness between about 30 to 280 Angstroms; a Schottky layer interfacing said channel layer; and a contact layer interfacing said Schottky layer.
Claim 9
Dependent Claim
17 words
The transistor of claim 6 , further comprising a buffer layer intermediate said substrate and channel layer.
Claim 10
Dependent Claim
15 words
The transistor of claim 6 , wherein said channel layer thickness is about 120 Angstroms.
Claim 11
Dependent Claim
12 words
The transistor of claim 6 , wherein said channel layer is strained.
Claim 12
Dependent Claim
29 words
The transistor of claim 6 , wherein said indium phosphide antimonide is characterized by a formula of InP x Sb (1−x) , wherein x is about 0.95 to 0.70.
Claim 13
Dependent Claim
11 words
The transistor of claim 10 , wherein x is about 0.85.
Claim 14
Dependent Claim
68 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a buffer layer immediately adjacent said substrate; a channel layer immediately adjacent said buffer layer, said channel layer comprising indium phosphide antimonide and characterized by a formula of InP x Sb (1−x) , wherein x is about 0.95 to 0.70; a Schottky layer immediately adjacent said channel layer; and a contact layer immediately adjacent said Schottky layer.
Claim 15
Dependent Claim
68 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a buffer layer immediately adjacent said substrate; a channel layer immediately adjacent said buffer layer, said channel layer comprising indium phosphide antimonide and characterized by a formula of InP x Sb (1−x) , wherein x is about 0.95 to 0.70; a Schottky layer immediately adjacent said channel layer; and a contact layer immediately adjacent said Schottky layer.
Claim 16
Dependent Claim
16 words
The transistor of claim 12 , wherein said buffer layer is lattice matched to said substrate.
Claim 17
Dependent Claim
16 words
The transistor of claim 12 , wherein said buffer layer is lattice mismatched to said substrate.
Claim 18
Dependent Claim
11 words
The transistor of claim 12 , wherein x is about 0.85.
Claim 19
Dependent Claim
19 words
The transistor of claim 12 , wherein said channel layer has a thickness of about 30 to 280 Angstroms.
Claim 20
Dependent Claim
13 words
The transistor of claim 16 , wherein said thickness is about 120 Angstroms.
Claim 21
Dependent Claim
98 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a buffer layer immediately adjacent said substrate; a channel layer immediately adjacent said buffer layer, said channel layer comprising indium phosphide antimonide and characterized by a formula of InP x Sb (1−x) , wherein x is about 0.85, said channel layer having a thickness of about 120 Angstroms; a Schottky layer immediately adjacent said channel layer; and a contact layer immediately adjacent said Schottky layer, whereby said transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2×10 6 cm/s.
Claim 22
Dependent Claim
98 words
A high electron mobility transistor, comprising: a substrate comprising indium phosphide; a buffer layer immediately adjacent said substrate; a channel layer immediately adjacent said buffer layer, said channel layer comprising indium phosphide antimonide and characterized by a formula of InP x Sb (1−x) , wherein x is about 0.85, said channel layer having a thickness of about 120 Angstroms; a Schottky layer immediately adjacent said channel layer; and a contact layer immediately adjacent said Schottky layer, whereby said transistor is characterized by a breakdown field of about 400 kV/cm and a saturated velocity of about 8.2×10 6 cm/s.
Claim 23
Dependent Claim
21 words
The transistor of claim 18 , wherein the transistor is further characterized by a peak velocity of about 2.8×10 7 cm/s.
Claim 24
Dependent Claim
23 words
The transistor of claim 18 , wherein the transistor is further characterized by a low field mobility of about 16,250 cm 2 /Vs.
Claim 25
Dependent Claim
20 words
The transistor of claim 18 , wherein the transistor is further characterized by a thermal conductivity of about 0.085 W/cm/K.
Claim 26
Dependent Claim
23 words
The transistor of claim 18 , wherein the transistor is further characterized by an electric field at peak velocity of about 12 kV/cm.
Claim 27
Dependent Claim
20 words
The transistor of claim 18 , wherein the transistor is further characterized by an energy bandgap of about 1.174 eV.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-05-14 | 2004-11-13 | 2005-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-05-14 | 2008-11-13 | 2009-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-05-14 | 2012-11-13 | 2013-05-15 | $7700.00 | Window Closed / Lapsed |