Method of forming a semiconductor structure

Claim 1

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting a value of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the selected value of <E c > and a second binary material with a value of <E c > lower than the selected value of <E c >, wherein the first and second binary materials share one element and are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, the composition of a ternary alloy having the selected value of <E c > and fabricating said portion of the structure from said ternary material.

Claim 2

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting a value of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the selected value of <E c > and a second binary material with a value of <E c > lower than the selected value of <E c >, wherein the first and second binary materials share one element and are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, the composition of a ternary alloy having the selected value of <E c > and fabricating said portion of the structure from said ternary material.

Claim 4

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting a value of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the selected value of <E c > and a second binary material with a value of <E c > lower than the selected value of <E c >, wherein the first and second binary materials share one element and are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, the composition of a ternary alloy having a value <E c > not to equal to the selected value of <E c > and fabricating said portion of the structure from said ternary material under strain such that the strain causes the ternary alloy to have a value <E c > equal to the selected value of <E c >.

Claim 5

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting a value of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the selected value of <E c > and a second binary material with a value of <E c > lower than the selected value of <E c >, wherein the first and second binary materials share one element and are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, the composition of a ternary alloy having a value <E c > not to equal to the selected value of <E c > and fabricating said portion of the structure from said ternary material under strain such that the strain causes the ternary alloy to have a value <E c > equal to the selected value of <E c >.

Claim 7

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting first and second values of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the first and second selected values of <E c > and a second binary material with a value of <E c > lower than the first and second selected value of <E c >, wherein the first and second binary materials share one element and are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, a first composition of a ternary alloy having the first selected value of <E c > and a second composition of the ternary alloy having the selected value of <E c > and fabricating said portion of the structure by spatially grading the composition of the ternary alloy between the first and second compositions.

Claim 8

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting first and second values of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the first and second selected values of <E c > and a second binary material with a value of <E c > lower than the first and second selected value of <E c >, wherein the first and second binary materials share one element and are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, a first composition of a ternary alloy having the first selected value of <E c > and a second composition of the ternary alloy having the selected value of <E c > and fabricating said portion of the structure by spatially grading the composition of the ternary alloy between the first and second compositions.

Claim 10

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting first and second values of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the first selected value of <E c > and a second binary material with a value of <E c > lower than the first selected value of <E c >, selecting a third binary material with a value of <E c > higher than the second selected value of <E c > and a fourth binary material with a value of <E c > lower than the second selected value of <E c >, wherein the first and second binary materials share one element and the third and fourth binary materials share one element and said first, second third and fourth binary materials are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, a composition of a first ternary alloy having the first selected value of <E c >, determining by interpolation between the third and fourth binary materials, a composition of a second ternary alloy having the second selected value of <E c > and fabricating said portion of the structure by spatially alternating layers of the first ternary alloy and the second ternary alloy.

Claim 11

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting first and second values of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first binary material with a value of <E c > higher than the first selected value of <E c > and a second binary material with a value of <E c > lower than the first selected value of <E c >, selecting a third binary material with a value of <E c > higher than the second selected value of <E c > and a fourth binary material with a value of <E c > lower than the second selected value of <E c >, wherein the first and second binary materials share one element and the third and fourth binary materials share one element and said first, second third and fourth binary materials are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, a composition of a first ternary alloy having the first selected value of <E c >, determining by interpolation between the third and fourth binary materials, a composition of a second ternary alloy having the second selected value of <E c > and fabricating said portion of the structure by spatially alternating layers of the first ternary alloy and the second ternary alloy.

Claim 14

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting first and second values of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first material with a value of <E c > higher than the first selected value of <E c > and a second material with a value of <E c > lower than the first selected value of <E c >, selecting a third material the second selected value of <E c >, wherein the first and second materials are binary material which share one element and said first, second and third materials are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, a composition of a first ternary alloy having the first selected value of <E c > and fabricating said portion of the structure by spatially alternating layers of the first ternary alloy and the third material.

Claim 15

A method of fabricating a semiconductor structure device with a predetermined architecture and functionality, comprising: selecting first and second values of Brillouin-zone-averaged energy bandgap (<E c >) for a functional part of the structure; selecting a first material with a value of <E c > higher than the first selected value of <E c > and a second material with a value of <E c > lower than the first selected value of <E c >, selecting a third material the second selected value of <E c >, wherein the first and second materials are binary material which share one element and said first, second and third materials are selected from: <E g > <E c > Material (eV) (eV) Si 1.17 2.09 Ge 0.74 0.97 BN 5.81 8.96 BP 2.04 3.34 BAs 1.55 2.72 AIN 4.54 6.52 GaN 3.25 4.79 AIP 2.50 3.24 AIAs 2.23 2.41 AISb 1.68 2.09 GaP 2.39 2.58 GaAs 1.52 1.77 GaSb 0.80 0.99 InP 1.42 2.09 InAs 0.41 1.51 InSb 0.23 1.03 Al .5 Ga .5 As 2.09 2.01 In .53 Ga .47 As 0.81 1.68 ZnS 3.80 4.65 ZnSe 2.96 3.78 ZnTe 2.71 2.97 CdS 2.55 4.30 CdSe 1.90 3.56 CdTe 1.92 2.78 HgTe 0.00 1.49 determining by interpolation between the first and second binary materials, a composition of a first ternary alloy having the first selected value of <E c > and fabricating said portion of the structure by spatially alternating layers of the first ternary alloy and the third material.

Claim 18

A method of forming a semiconductor structure comprising forming the structure such that the Brillouin-zone-averaged energy bandgap (<E c >) of at least a portion of thereof is controlled so as to provide a predetermined avalanche breakdown characteristic therefor, wherein (<E c >) of said portion is selected according to the following relationship: ( E c ) = ( V b + m ) n where V b is the predetermined breakdown voltage, and m and n are constants and wherein the structure is a p-i-n diode having a 1 μm wide i region, m is approximately 45.8 and n is approximately 46.3.

Claim 19

A method of forming a semiconductor structure comprising forming the structure such that the Brillouin-zone-averaged energy bandgap (<E c >) of at least a portion of thereof is controlled so as to provide a predetermined avalanche breakdown characteristic therefor, wherein (<E c >) of said portion is selected according to the following relationship: ( E c ) = ( V b + m ) n where V b is the predetermined breakdown voltage, and m and n are constants and wherein the structure is a p-i-n diode having a 1 μm wide i region, m is approximately 45.8 and n is approximately 46.3.