US6555850B1
Expired / Lapsed
US
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Field-effect transistor
Assignee: Sumitomo Electric Industries Ltd
•
Filing: 2000-02-17
•
Granted: 2003-04-29
•
Expires: 2020-02-17
Abstract
Abstract A field-effect transistor has a composite channel structure having a first channel layer containing GaInP semiconductor and a second channel layer containing GaAs semiconductor. When the electric field is low in the channel, a channel current is primarily conducted in the second channel layer. When the electric field is high, the electrons flowing in the second channel layer move through real space transition to the first channel layer. These electrons conduct in the channel primarily in the first channel layer. Since GaInP semiconductor has a wider forbidden bandwidth than that of GaAs semiconductor, the avalanche breakdown voltage of GaInP semiconductor is higher than that of GaAs semiconductor. When the electric field is high, the conduction electrons travel in this GaInP semiconductor layer. This also improves the avalanche breakdown voltage of the field-effect transistor.
Inventors
- 👤 Ryoji Sakamoto
- 👤 Shigeru Nakajima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:47
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
105 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said first Ga x In 1−x As y P 1−y layer includes donor impurities, and said GaAs layer includes smaller donor impurity concentration than that of said first Ga x In 1−x As y P 1−y layer.
Claim 2
Dependent Claim
105 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said first Ga x In 1−x As y P 1−y layer includes donor impurities, and said GaAs layer includes smaller donor impurity concentration than that of said first Ga x In 1−x As y P 1−y layer.
Claim 3
Dependent Claim
27 words
A field-effect transistor according to claim 1 , further comprising: a first Al u Ga 1−u As layer (0≦u<1) provided between said substrate and said channel layer.
Claim 4
Dependent Claim
28 words
A field-effect transistor according to claim 1 , further comprising a second Al v Ga 1−v As layer (0≦v<1) provided between said gate electrode and said channel layer.
Claim 5
Dependent Claim
25 words
A filed-effect transistor according to claim 1 , wherein said channel layer comprises a Ga t In 1−t P layer (0<t<1) and a GaAs layer.
Claim 6
Dependent Claim
115 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said channel layer further comprises a second Ga p In 1−p As q P 1−q layer (0<p<1, 0<q<1), and said GaAs layer is provided between said first Ga x In 1−x As y P 1−y and said second Ga p In 1−p As q P 1−q layer.
Claim 7
Dependent Claim
115 words
A field-effect transistor comprising: a substrate made of GaAs; a channel layer having a first Ga x In 1−x As y P 1−y (0<x<1, 0<y<1) layer and a GaAs layer, and a gate electrode formed so as to control a channel current conducting in said channel layer, wherein said first Ga x In 1−x As y P 1−y layer is substantially lattice-matched with GaAs of said substrate, wherein said channel layer further comprises a second Ga p In 1−p As q P 1−q layer (0<p<1, 0<q<1), and said GaAs layer is provided between said first Ga x In 1−x As y P 1−y and said second Ga p In 1−p As q P 1−q layer.
Claim 8
Dependent Claim
28 words
A field-effect transistor according to claim 5 , wherein said second Ga p In 1−p As q P 1−q layer is substantially lattice-matched with GaAs of said substrate.
Claim 9
Dependent Claim
27 words
A field-effect transistor according to claim 5 , further comprising: a first Al u Ga 1−u As layer (0≦u<1) provided between said substrate and said channel layer.
Claim 10
Dependent Claim
28 words
A field-effect transistor according to claim 5 , further comprising a second Al v Ga 1−v As layer (0≦v<1) provided between said gate electrode and said channel layer.
Claim 11
Dependent Claim
25 words
A filed-effect transistor according to claim 5 , wherein said channel layer comprises a Ga t In 1−t P layer (0<t<1) and a GaAs layer.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2006-04-28 | 2006-10-28 | 2007-04-29 | $2000.00 | Window Closed / Lapsed |
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