Patent US6534382B1 successfully refreshed from Google Patents.
US6534382B1
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US
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Process for producing semiconductor article
Assignee: Canon Inc
•
Filing: 2000-08-08
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Granted: 2003-03-18
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Expires: 2020-08-08
Abstract
Abstract A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.
Inventors
- 👤 Kiyofumi Sakaguchi
- 👤 Takao Yonehara
- 👤 Shoji Nishida
- 👤 Kenji Yamagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 07:21
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1924; B; B28; B28D; B28D5/00; H10F; H10F10/00; H10F10/10; H10F10/14; H10F71/00; H10F71/121; H10F71/139; H10P10/00; H10P10/12; H10P10/128; H10P52/00; H10P74/00; H10P90/1914; H10P90/1916; H10W; H10W10/00; H10W10/10; H10W10/181; G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136277; H10P72/00; H10P72/70; H10P72/74; H10P72/7432; H10P72/7434; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/547; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
116 words
A method for forming a semiconductor thin film which comprises steps of: implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer, bonding a film on a surface side of the semiconductor substrate, and separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force, and warping the semiconductor substrate or the film bonded on the semiconductor substrate such that a crack forms and extends from a flank side of the semiconductor substrate.
Claim 2
Independent Claim
116 words
A method for forming a semiconductor thin film which comprises steps of: implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer, bonding a film on a surface side of the semiconductor substrate, and separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force, and warping the semiconductor substrate or the film bonded on the semiconductor substrate such that a crack forms and extends from a flank side of the semiconductor substrate.
Claim 3
Dependent Claim
30 words
The method according to claim 1 , which comprises a step of forming said semiconductor thin film on the surface of a semiconductor body before said ion-implanted layer is formed.
Claim 4
Dependent Claim
29 words
The method according to claim 1 , which comprises a step of forming an oxide layer on the surface of said semiconductor substrate before said ion-implanted layer is formed.
Claim 5
Dependent Claim
22 words
The method for forming a semiconductor thin film according to claim 1 , wherein said semiconductor substrate is a non-porous semi-conductor substrate.
Claim 6
Independent Claim
95 words
A method for forming a semiconductor thin film which comprises steps of: implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer, separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force and warping the semiconductor substrate such that crack forms and extends from a flank side of the semiconductor substrate.
Claim 7
Independent Claim
95 words
A method for forming a semiconductor thin film which comprises steps of: implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer, separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force and warping the semiconductor substrate such that crack forms and extends from a flank side of the semiconductor substrate.
Claim 8
Dependent Claim
30 words
The method according to claim 5 , which comprises a step of forming said semiconductor thin film on the surface of a semiconductor body before said ion-implanted layer is formed.
Claim 9
Dependent Claim
29 words
The method according to claim 5 , which comprises a step of forming an oxide layer on the surface of said semiconductor substrate before said ion-implanted layer is formed.
Claim 10
Dependent Claim
22 words
The method for forming a semiconductor thin film according to claim 5 , wherein said semiconductor substrate is a non-porous semiconductor substrate.
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