US5750000A
Expired / Lapsed
US
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Semiconductor member, and process for preparing same and semiconductor device formed by use of same
Assignee: Canon Inc
•
Filing: 1996-11-25
•
Granted: 1998-05-12
•
Expires: 2016-11-25
Abstract
Abstract A semiconductor device having a substrate with an insulating surface and a non-porous semiconductor region bonded to the body of the device. A porous semiconductor region on the surface of the substrate was removed by etching.
Inventors
- 👤 Takao Yonehara
- 👤 Nobuhiko Sato
- 👤 Kiyofumi Sakaguchi
- 👤 Shigeki Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:10
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/96
Claims Analysis
Total Claims: 77
Claim 1
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline semiconductor region disposed on the surface comprising the steps of: preparing a body comprising a porous monocrystalline semiconductor region and said non-porous monocrystalline semiconductor region formed thereon, bonding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the surface of said non-porous noncrystalline semiconductor region, and removing the porous monocrystalline semiconductor region by etching.
Claim 2
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline semiconductor region disposed on the surface comprising the steps of: preparing a body comprising a porous monocrystalline semiconductor region and said non-porous monocrystalline semiconductor region formed thereon, bonding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the surface of said non-porous noncrystalline semiconductor region, and removing the porous monocrystalline semiconductor region by etching.
Claim 3
Independent Claim
125 words
A method of manufacturing an insulating gate type field effect transistor comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline semiconductor layer disposed on the surface, and wherein a monocrystalline semiconductor layer constitutes at least a channel region of said transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline semiconductor layer, said non-porous monocrystalline semiconductor layer having an oxidized surface which is formed on said non-porous semiconductor layer, bonding the substrate having the surface composed of the insulating material to the body so that the surface composed of the insulating material is adhered to the surface of the non-porous monocrystalline semiconductor layer, and removing the porous silicon substrate by chemical etching.
Claim 4
Independent Claim
125 words
A method of manufacturing an insulating gate type field effect transistor comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline semiconductor layer disposed on the surface, and wherein a monocrystalline semiconductor layer constitutes at least a channel region of said transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline semiconductor layer, said non-porous monocrystalline semiconductor layer having an oxidized surface which is formed on said non-porous semiconductor layer, bonding the substrate having the surface composed of the insulating material to the body so that the surface composed of the insulating material is adhered to the surface of the non-porous monocrystalline semiconductor layer, and removing the porous silicon substrate by chemical etching.
Claim 5
Independent Claim
117 words
A method of manufacturing a bipolar transistor comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline layer disposed on the surface, and wherein a monocrystalline semiconductor layer constitutes at least an active region of said transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline layer having an oxidized surface which is formed on said non-porous monocrystal layer, bonding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the oxidized or non-oxidized surface formed on said non-porous monocrystalline layer, and removing the porous silicon substrate by chemical etching.
Claim 6
Independent Claim
117 words
A method of manufacturing a bipolar transistor comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline layer disposed on the surface, and wherein a monocrystalline semiconductor layer constitutes at least an active region of said transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline layer having an oxidized surface which is formed on said non-porous monocrystal layer, bonding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the oxidized or non-oxidized surface formed on said non-porous monocrystalline layer, and removing the porous silicon substrate by chemical etching.
Claim 7
Independent Claim
114 words
A method of manufacturing a power transistor comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline layer disposed on the surface, and wherein a monocrystalline semiconductor layer constitutes at least a channel region of said transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and a non-porous monocrystalline layer with or without an oxidized surface which is formed thereon, boding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the oxidized or non-oxidized surface of the non-porous monocrystalline layer, and removing the porous silicon substrate by chemical etching.
Claim 8
Independent Claim
114 words
A method of manufacturing a power transistor comprising a substrate having a surface composed of an insulating material and a non-porous monocrystalline layer disposed on the surface, and wherein a monocrystalline semiconductor layer constitutes at least a channel region of said transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and a non-porous monocrystalline layer with or without an oxidized surface which is formed thereon, boding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the oxidized or non-oxidized surface of the non-porous monocrystalline layer, and removing the porous silicon substrate by chemical etching.
Claim 9
Independent Claim
126 words
A method of manufacturing a semiconductor device comprising a bipolar transistor and a field effect transistor in which said bipolar transistor and said field effect transistor comprise a substrate having a surface composed of an insulating material and a non-porous monocrystalline layer disposed on the surface, and wherein monocrystalline semiconductor layers constitute active regions of said bipolar transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline layer with an oxidized surface which is formed thereon, bonding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the oxidized surface of the non-porous monocrystalline layer, and removing the porous silicon substrate by chemical etching.
Claim 10
Independent Claim
126 words
A method of manufacturing a semiconductor device comprising a bipolar transistor and a field effect transistor in which said bipolar transistor and said field effect transistor comprise a substrate having a surface composed of an insulating material and a non-porous monocrystalline layer disposed on the surface, and wherein monocrystalline semiconductor layers constitute active regions of said bipolar transistor, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline layer with an oxidized surface which is formed thereon, bonding the substrate having a surface composed of an insulating material to the body so that the surface composed of an insulating material is adhered to the oxidized surface of the non-porous monocrystalline layer, and removing the porous silicon substrate by chemical etching.
Claim 11
Independent Claim
118 words
A method of manufacturing a liquid crystal display apparatus having a semiconductor active device and a liquid crystal layer which are formed on a common substrate, said semiconductor active device comprising a light-transmissive substrate and a non-porous monocrystalline layer disposed on the surface, and wherein a monocrystalline layer constitutes at least an active region of said semiconductor active device, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline layer with an oxidized surface which is formed thereon, bonding the light-transmissive substrate so that the surface of the light-transmissive substrate to the body is adhered to the oxidized surface of the non-porous monocrystalline layer, and removing the porous silicon substrate by etching.
Claim 12
Independent Claim
118 words
A method of manufacturing a liquid crystal display apparatus having a semiconductor active device and a liquid crystal layer which are formed on a common substrate, said semiconductor active device comprising a light-transmissive substrate and a non-porous monocrystalline layer disposed on the surface, and wherein a monocrystalline layer constitutes at least an active region of said semiconductor active device, comprising the steps of: preparing a body comprising a porous silicon substrate and said non-porous monocrystalline layer with an oxidized surface which is formed thereon, bonding the light-transmissive substrate so that the surface of the light-transmissive substrate to the body is adhered to the oxidized surface of the non-porous monocrystalline layer, and removing the porous silicon substrate by etching.
Claim 13
Dependent Claim
44 words
A method of manufacturing an insulating gate type field effect transistor according to claim 2, wherein said non-porous monocrystalline semiconductor layer is an unoxidized layer, and wherein said surface composed of an insulating material is adhered to the surface of said non-porous monocrystalline layer.
Claim 14
Dependent Claim
39 words
A method of manufacturing a bipolar transistor according to claim 3, wherein said non-porous monocrystalline layer is an unoxidized layer, and wherein said surface composed of an insulating material is adhered to the surface of said non-porous monocrystalline layer.
Claim 15
Dependent Claim
38 words
A method of manufacturing a power transistor according to claim 4, wherein said non-porous monocrystalline layer is an unoxidized layer, and wherein said surface composed of an insulating material is adhered to the surface of said monocrystalline layer.
Claim 16
Dependent Claim
39 words
A method of manufacturing a semiconductor device according to claim 5, wherein said non-porous monocrystalline layer is an unoxidized layer, and wherein said surface composed of an insulating material is adhered to the surface of said non-porous monocrystalline layer.
Claim 17
Dependent Claim
41 words
A method of manufacturing a liquid crystal display apparatus according to claim 6, wherein said non-porous monocrystalline layer is an unoxidized layer, and wherein said surface composed of an insulating material is adhered to the surface of said non-porous monocrystalline layer.
Claim 18
Dependent Claim
10 words
A semiconductor device manufactured by a method of claim 1.
Claim 19
Dependent Claim
14 words
An insulating gate type field effect transistor manufactured by a method of claim 3.
Claim 20
Dependent Claim
10 words
A bipolar transistor manufactured by a method of claim 3.
Claim 21
Dependent Claim
10 words
A power transistor manufactured by a method of claim 4.
Claim 22
Dependent Claim
10 words
A semiconductor device manufactured by a method of claim 5.
Claim 23
Dependent Claim
12 words
A liquid crystal display apparatus manufactured by a method of claim 6.
Claim 24
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising a substrate having an insulating layer and a non-porous monocrystalline semiconductor region disposed on the insulating layer, which comprises the steps of: preparing a first member having a porous monocrystalline semiconductor region and the non-porous monocrystalline semiconductor region formed thereon; bonding the first member to a second member with the insulating layer therebetween and in a manner so as to place the non-porous monocrystalline semiconductor region inside the multi-layer structure to be obtained; and removing the porous monocrystalline semiconductor region from the multi-layer structure.
Claim 25
Independent Claim
92 words
A method of manufacturing a semiconductor device comprising a substrate having an insulating layer and a non-porous monocrystalline semiconductor region disposed on the insulating layer, which comprises the steps of: preparing a first member having a porous monocrystalline semiconductor region and the non-porous monocrystalline semiconductor region formed thereon; bonding the first member to a second member with the insulating layer therebetween and in a manner so as to place the non-porous monocrystalline semiconductor region inside the multi-layer structure to be obtained; and removing the porous monocrystalline semiconductor region from the multi-layer structure.
Claim 26
Dependent Claim
20 words
The method according to claim 18, wherein the porous monocrystalline semiconductor region and the non-porous monocrystalline semiconductor region comprise silicon.
Claim 27
Dependent Claim
16 words
The method according to claim 19, wherein the porous monocrystalline semiconductor region comprises a P-type semiconductor.
Claim 28
Dependent Claim
18 words
The method according to claim 20, wherein the non-porous monocrystalline semiconductor region comprises an intrinsic or N-type semiconductor.
Claim 29
Dependent Claim
20 words
The method according to claim 18, wherein the non-porous monocrystalline semiconductor region has a thickness of 50 microns or less.
Claim 30
Dependent Claim
18 words
The method according to claim 18, wherein the bonding step is carried out in an atmosphere comprising nitrogen.
Claim 31
Dependent Claim
14 words
The method according to claim 18, wherein the bonding step comprises a heat treatment.
Claim 32
Dependent Claim
17 words
The method according to claim 18, wherein the non-porous monocrystalline semiconductor region is formed by epitaxial growth.
Claim 33
Dependent Claim
51 words
The method according to claim 25, wherein the non-porous monocrystalline semiconductor region is formed according to a method selected from the group consisting of the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method and the sputtering method.
Claim 34
Dependent Claim
31 words
The method according to claim 18, wherein the porous monocrystalline semiconductor region is obtained by making porous at least a part of a substrate comprising a non-porous semiconductor monocrystal by anodization.
Claim 35
Dependent Claim
17 words
The method according to claim 27, wherein the anodization is carried out in a hydrofluoric acid solution.
Claim 36
Dependent Claim
14 words
The method according to claim 18, wherein the second member comprises a silicon substrate.
Claim 37
Dependent Claim
24 words
The method according to claim 18, wherein the second member and the insulating layer are formed by oxidizing a surface of a silicon substrate.
Claim 38
Dependent Claim
41 words
The method according to claim 18, wherein the first member and the insulating layer are formed by oxidizing a surface of a non-porous monocrystalline silicon layer of a substrate having a porous monocrystalline silicon layer and the non-porous monocrystalline silicon layer.
Claim 39
Dependent Claim
74 words
The method according to claim 18, wherein the insulating layer comprises a first and a second insulating layers, wherein the first member and the first insulating layer are formed by oxidizing a surface of a non-porous monocrystalline silicon layer of a substrate having a porous monocrystalline silicon layer and the non-porous monocrystalline silicon layer, and wherein the second member and the second insulating layer are formed by oxidizing a surface of a silicon substrate.
Claim 40
Independent Claim
17 words
The method according to any one of claims 30 to 32, wherein the oxidation is thermal oxidation.
Claim 41
Dependent Claim
24 words
The method according to claim 18, wherein the removal of the porous monocrystalline semiconductor region from the multi-layer structure is carried out by etching.
Claim 42
Dependent Claim
20 words
The method according to claim 34, wherein the etching is carried out by using an aqueous solution as an etchant.
Claim 43
Dependent Claim
12 words
The method according to claim 35, wherein the etchant comprises hydrofluoric acid.
Claim 44
Dependent Claim
52 words
The method according to claim 18, wherein a substrate, comprising a non-porous semiconductor monocrystal, is partly made porous to form the porous monocrystalline semiconductor region; and after the bonding step, the region not made porous of the substrate is removed; and the porous monocrystalline semiconductor region is removed from the multi-layer structure.
Claim 45
Dependent Claim
18 words
The method according to claim 37, wherein the region not made porous of the substrate is mechanically removed.
Claim 46
Dependent Claim
17 words
The method according to claim 38, wherein the mechanical removal is carried out by grinding or polishing.
Claim 47
Dependent Claim
33 words
The method according to claim 18, wherein the semiconductor device comprises an insulated gate type field effect transistor, and wherein the non-porous monocrystalline semiconductor region forms at least the channel-region of the transistor.
Claim 48
Dependent Claim
30 words
The method according to claim 18, wherein the semiconductor device comprises a bipolar transistor, and wherein the non-porous monocrystalline semiconductor region forms at least the active region of the transistor.
Claim 49
Dependent Claim
30 words
The method according to claim 18, wherein the semiconductor device comprises a power transistor, and wherein the non-porous monocrystalline semiconductor region forms at least the channel region of the transistor.
Claim 50
Dependent Claim
44 words
The method according to claim 18, wherein the semiconductor device comprises a liquid crystal display having a semiconductor active region and a liquid crystal layer, and wherein the non-porous monocrystalline semiconductor region forms at least the semiconductor active region of the liquid crystal display.
Claim 51
Dependent Claim
11 words
A semiconductor device manufactured according to the method of claim 18.
Claim 52
Independent Claim
89 words
A method of manufacturing a semiconductor device comprising a substrate having an insulating body and a non-porous monocrystalline semiconductor region disposed on the insulating body, which comprises the steps of: preparing a first member having a porous monocrystalline semiconductor region and the non-porous monocrystalline semiconductor region formed thereon; bonding the first member toa second member comprising the insulating body in a manner so as to place the non-porous monocrystalline semiconductor region inside the multi-layer structure to be obtained; and removing the porous monocrystalline semiconductor region from the multi-layer structure.
Claim 53
Independent Claim
89 words
A method of manufacturing a semiconductor device comprising a substrate having an insulating body and a non-porous monocrystalline semiconductor region disposed on the insulating body, which comprises the steps of: preparing a first member having a porous monocrystalline semiconductor region and the non-porous monocrystalline semiconductor region formed thereon; bonding the first member toa second member comprising the insulating body in a manner so as to place the non-porous monocrystalline semiconductor region inside the multi-layer structure to be obtained; and removing the porous monocrystalline semiconductor region from the multi-layer structure.
Claim 54
Dependent Claim
20 words
The method according to claim 45, wherein the porous monocrystalline semiconductor region and the non-porous monocrystalline semiconductor region comprise silicon.
Claim 55
Dependent Claim
16 words
The method according to claim 46, wherein the porous monocrystalline semiconductor region comprises a P-type semiconductor.
Claim 56
Dependent Claim
18 words
The method according to claim 47, wherein the non-porous monocrystalline semiconductor region comprises an intrinsic or N-type semiconductor.
Claim 57
Dependent Claim
20 words
The method according to claim 45, wherein the non-porous monocrystalline semiconductor layer has a thickness of 50 microns or less.
Claim 58
Dependent Claim
18 words
The method according to claim 45, wherein the bonding step is carried out in an atmosphere comprising nitrogen.
Claim 59
Dependent Claim
14 words
The method according to claim 45, wherein the bonding step comprises a heat treatment.
Claim 60
Dependent Claim
17 words
The method according to claim 45, wherein the non-porous monocrystalline semiconductor layer is formed by epitaxial growth.
Claim 61
Dependent Claim
51 words
The method according to claim 52, wherein the non-porous monocrystalline semiconductor layer is formed according to a method selected from the group consisting of the molecular beam epitaxial method, the plasma CVD method, the low pressure CVD method, the photo CVD method, the liquid phase growth method and the sputtering method.
Claim 62
Dependent Claim
31 words
The method according to claim 45, wherein the porous monocrystalline semiconductor region is obtained by making porous at least a part of a substrate comprising a non-porous semiconductor monocrystal by anodization.
Claim 63
Dependent Claim
17 words
The method according to claim 45, wherein the anodization is carried out in a hydrofluoric acid solution.
Claim 64
Dependent Claim
14 words
The method according to claim 45, wherein the second member comprises a light-transmissive material.
Claim 65
Dependent Claim
12 words
The method according to claim 56, wherein the light-transmissive material comprises glass.
Claim 66
Dependent Claim
12 words
The method according to claim 57, wherein the glass is quartz glass.
Claim 67
Dependent Claim
24 words
The method according to claim 45, wherein the removal of the porous monocrystalline semiconductor region from the multi-layer structure is carried out by etching.
Claim 68
Dependent Claim
20 words
The method according to claim 59, wherein the etching is carried out by using an aqueous solution as an etchant.
Claim 69
Dependent Claim
12 words
The method according to claim 60, wherein the enchant comprises hydrofluoric acid.
Claim 70
Dependent Claim
51 words
The method according to claim 46, wherein a substrate comprising a non-porous semiconductor monocrystal is partly made porous to form the porous monocrystalline semiconductor region: after the bonding step, the region not made porous of the substrate is removed; and the porous monocrystalline semiconductor region in removed from the multi-layer structure.
Claim 71
Dependent Claim
18 words
The method according to claim 62, wherein the region not made porous of the substrate is mechanically removed.
Claim 72
Dependent Claim
17 words
The method according to claim 63, wherein the mechanical removal is carried out by grinding or polishing.
Claim 73
Dependent Claim
34 words
The method according to claim 45, wherein the semiconductor device comprises an insulated gate type field effect transistor, and wherein the non-porous monocrystalline semiconductor region forms at least the channel region of the transistor.
Claim 74
Dependent Claim
30 words
The method according to claim 45, wherein the semiconductor device comprises a bipolar transistor, and wherein the non-porous monocrystalline semiconductor region forms at least the active region of the transistor.
Claim 75
Dependent Claim
30 words
The method according to claim 45, wherein the semiconductor device comprises a power transistor, and wherein the non-porous monocrystalline semiconductor region forms at least the channel region of the transistor.
Claim 76
Dependent Claim
44 words
The method according to claim 45, wherein the semiconductor device comprises a liquid crystal display having a semiconductor active region and a liquid crystal layer, and wherein the non-porous monocrystalline semiconductor region forms at least the semiconductor active region of the liquid crystal display.
Claim 77
Dependent Claim
11 words
A semiconductor device manufactured according to the method of claim 45.
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