Means and methods of lifting and relocating an epitaxial device layer

Claim 2

A process for selectively freeing without curling an epitaxial film from an original substrate upon which it was grown having a release layer operatively interposed therebetween, and transferring such film to a new substrate comprising the steps of: placing a layer of temporary adhesive over the epitaxial film; placing a planar rigid support mask having holes strategically defined therein upon said temporary adhesive layer; extending said holes in said support mask downwardly through said temporary adhesive layer, said epitaxial film, and said release layer; directing an etchant through said extended holes to engage and eliminate said release layer from between said epitaxial film and said substrate; raising said rigid support mask having said epitaxial film secured thereto by said temporary adhesive to separate said epitaxial film from said original substrate; positioning said rigid support mask in alignment over a new substrate; securing said epitaxial film to said substrate, and removing said support means and said temporary adhesive from said transplanted epitaxial film.

Claim 3

A process according to claim 1 in which said epitaxial film is selected from the group consisting of GaAs, Al x Ga 1-x As and AlAs.

Claim 4

A process according to claim 1 in which said etchant comprises hydrofluoric acid and water in a ratio of from about 1:5 to about 1:20.

Claim 5

A process according to claim 2 in which said etchant comprises hydrofluoric acid and water in a ratio of from about 1:5 to about 1:20.

Claim 6

A process according to claim 1 in which said holes are extended down into said original substrate.

Claim 7

A process according to claim 2 in which said holes are extended down into said original substrate.

Claim 8

A process according to claim 3 in which said holes are extended down into said original substrate.

Claim 9

A process according to claim 1 in which said epitaxial film is secured to said new substrate by van der Waal's bonding.

Claim 10

A process according to claim 1 in which said epitaxial film is secured to said new substrate by permanent adhesive.

Claim 11

A process according to claim 1 in which said temporary adhesive layer is positive photoresist.

Claim 12

A process according to claim 2 in which said temporary adhesive layer is positive photoresist.

Claim 13

A process according to claim 3 in which said temporary adhesive layer is positive photoresist.

Claim 14

A process according to claim 5 in which said temporary adhesive layer is positive photoresist.

Claim 15

A process according to claim 1 in which said support mask is formed of silicon wafer.

Claim 16

A process according to claim 12 in which said support mask is formed of silicon wafer.

Claim 17

A process according to claim 10 in which said support mask is formed of silicon wafer.

Claim 18

A process according to claim 1 in which said release layer is AlAs.

Claim 19

A process according to claim 16 in which said release layer is AlAs.

Claim 20

A process according to claim 11 in which said release layer is AlAs.

Claim 21

A process according to claim 15 in which said release layer is AlAs.

Claim 22

A process according to claim 4 in which said holes are extended down into said original substrate.

Claim 23

A process according to claim 21 in which said temporary adhesive layer is positive photoresist.

Claim 24

A process according to claim 17 in which said temporary adhesive layer is positive photoresist.

Claim 25

A process according to claim 22 in which said support mask is formed of silicon wafer.

Claim 26

A process for selectively freeing without curling an epitaxial layer from an original substrate upon which it was grown having a release layer of AlAs operatively interposed therebetween, and transferring said epitaxial layer to a new substrate, said process comprising the steps of: placing a layer of positive photoresist as a temporary adhesive over the epitaxial layer selected from the group consisting of GaAs, Al x Ga 1-x As and AlAs; placing upon said temporary adhesive layer a planar rigid silicon wafer support wafer support mask having holes strategically defined therein; extending said holes in said support mask downwardly through said temporary adhesive layer, said eiptaxial layer, and said release layer; directing an etchant comprising hydrofluoric acid and water in a ratio of from about 1:5 to about 1:20 into said original substrate through said extended holes to engage and eliminate said release layer from between said eiptaxial layer and said substrate; raising said rigid support mask having said epitaxial layer secured thereto by said temporary adhesive to separate said epitaxial layer secured thereto by said original substrate; positioning said rigid support mask n alignment over a new substrate; securing said epitaxial layer to said substrate, and removing said support means and said temporary adhesive from said transplanted eiptaxial layer.

Claim 27

A process for selectively freeing without curling an epitaxial layer from an original substrate upon which it was grown having a release layer of AlAs operatively interposed therebetween, and transferring said epitaxial layer to a new substrate, said process comprising the steps of: placing a layer of positive photoresist as a temporary adhesive over the epitaxial layer selected from the group consisting of GaAs, Al x Ga 1-x As and AlAs; placing upon said temporary adhesive layer a planar rigid silicon wafer support wafer support mask having holes strategically defined therein; extending said holes in said support mask downwardly through said temporary adhesive layer, said eiptaxial layer, and said release layer; directing an etchant comprising hydrofluoric acid and water in a ratio of from about 1:5 to about 1:20 into said original substrate through said extended holes to engage and eliminate said release layer from between said eiptaxial layer and said substrate; raising said rigid support mask having said epitaxial layer secured thereto by said temporary adhesive to separate said epitaxial layer secured thereto by said original substrate; positioning said rigid support mask n alignment over a new substrate; securing said epitaxial layer to said substrate, and removing said support means and said temporary adhesive from said transplanted eiptaxial layer.

Claim 28

A process according to claim 25 in which said epitaxial layer is secured to said new substrate by van der Waal's bonding.

Claim 29

A process according to claim 25 in which said epitaxial layer is secured to said new substrate by permanent adhesive.