US4582559A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making thin free standing single crystal films
Assignee: AMI Semiconductor Inc
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Filing: 1984-04-27
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Granted: 1986-04-15
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Expires: 2004-04-27
Abstract
Abstract Thin free standing single crystal films can be produced by sputter depositing a layer of stressable metal onto a single crystal substrate, treating the composite so produced to effect stressing of the metal layer which then peels away with a portion of the single crystal substrate attached to the metal layer. The free standing film thus produced has typical thickness in the order of tens of micrometers. The metal layer can subsequently be removed by acid etching or other suitable etching techniques, to leave the free standing single crystal film, having a thickness from about 5 microns to about 50 or more.
Inventors
- 👤 Minas Tanielian
- 👤 Robert E. Lajos
- 👤 Scott Blackstone
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 04:20
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B23/00; C30B23/02; C30B33/00; Y; Y10; Y10S; Y10S117/00; Y10S117/915
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
77 words
A method of fabricating thin free standing single crystal films, the steps which comprise: sputter depositing a layer of stressable metal onto a single crystal substrate, said metal layer adhering to said substrate; treating the composite so produced to effect stressing of the metal layer; peeling said metal layer and a thin film of said single crystal substrate attached to said metal layer from said substrate; and removing said metal layer from said thin single crystal film.
Claim 2
Independent Claim
77 words
A method of fabricating thin free standing single crystal films, the steps which comprise: sputter depositing a layer of stressable metal onto a single crystal substrate, said metal layer adhering to said substrate; treating the composite so produced to effect stressing of the metal layer; peeling said metal layer and a thin film of said single crystal substrate attached to said metal layer from said substrate; and removing said metal layer from said thin single crystal film.
Claim 3
Dependent Claim
14 words
The method according to claim 1 wherein said metal is an 80-20 nickel/chrome alloy.
Claim 4
Dependent Claim
39 words
The method according to claim 2 wherein said substrate is a member selected from the group consisting of gallium arsenide, silicon, and silicon having a thin layer of silicon dioxide on the surface to which the nickel/chrome is sputtered.
Claim 5
Dependent Claim
40 words
The method according to claim 3 wherein a thin ceramic coating is deposited on the surface of the substrate prior to sputter depositing of said metal layer, and wherein after said metal layer is removed, said ceramic layer is removed.
Claim 6
Dependent Claim
40 words
The method according to claim 3 wherein a thin glass coating is deposited on the surface of the substrate prior to sputter depositing of said metal layer, and wherein after said metal layer is removed, said glass layer is removed.
Claim 7
Dependent Claim
28 words
The method according to claim 4 wherein at least one electronic device is disposed on said surface of said substrate prior to deposition of said coating of ceramic.
Claim 8
Dependent Claim
28 words
The method according to claim 5 wherein at least one electronic device is disposed on said surface of said substrate prior to deposition of said coating of glass.
Claim 9
Dependent Claim
16 words
The method according to claim 3 wherein said treatment comprises subjecting said composite to cold shock.
Claim 10
Dependent Claim
23 words
The method according to claim 8 wherein said treatment comprises subjecting said composite to cold shock by immersing said composite in liquid nitrogen.
Claim 11
Dependent Claim
28 words
The method according to claim 3 wherein said treatment comprises subjecting said composite to heat shock at a temperature of from about 200° C. to about 800° C.
References Cited (Backward Citations)
US3370980A
Cited
US4445965A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1989-04-14 | 1989-10-14 | 1990-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1993-04-14 | 1993-10-14 | 1994-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1997-04-14 | 1997-10-14 | 1998-04-15 | $7700.00 | Window Closed / Lapsed |