US6090688A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating an SOI substrate
Assignee: Sumco Techxiv Corp
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Filing: 1996-11-15
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Granted: 2000-07-18
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Expires: 2016-11-15
Abstract
Abstract A method for fabricating an SOI substrate is provided, which has an active substrate formed as a thin film. The method comprises the steps of: using a both-side polishing apparatus to polish both sides of a supporting substrate 1; bonding an active substrate 2 onto the supporting substrate 1. to form a bonded-wafer; removing an unbonded portion formed at the circumference of the bonded-wafer; flat grinding the active substrate 2 to reduce the thickness thereof; etching the active substrate 2 by spin etching; and processing the active substrate to be a thin film by PACE processing.
Inventors
- 👤 Tadashi Ogawa
- 👤 Akihiro Ishii
- 👤 Yuichi Nakayoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 05:23
CPC Classifications
H; H10; H10P; H10P50/00; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1922; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
119 words
A method for fabricating an SOI substrate, comprising the steps of: (1) using a both-side polishing apparatus to polish both sides of a supporting substrate constituted by a first semiconductor wafer; (2) bonding an active substrate constituted by a second semiconductor wafer onto the supporting substrate being both-side polished to form an bonded-wafer; (3) removing an unbonded portion formed at the circumference of the bonded-wafer; (4) flat grinding the active substrate of the bonded-wafer which has the unbonded portion removed to reduce the thickness thereof; (5) etching the active substrate which has been flat ground by spin etching; and (6) processing the active substrate which has been etched by spin etching to be a thin film by PACE processing.
Claim 2
Independent Claim
119 words
A method for fabricating an SOI substrate, comprising the steps of: (1) using a both-side polishing apparatus to polish both sides of a supporting substrate constituted by a first semiconductor wafer; (2) bonding an active substrate constituted by a second semiconductor wafer onto the supporting substrate being both-side polished to form an bonded-wafer; (3) removing an unbonded portion formed at the circumference of the bonded-wafer; (4) flat grinding the active substrate of the bonded-wafer which has the unbonded portion removed to reduce the thickness thereof; (5) etching the active substrate which has been flat ground by spin etching; and (6) processing the active substrate which has been etched by spin etching to be a thin film by PACE processing.
Claim 3
Independent Claim
128 words
A method for fabricating an SOI substrate, comprising the steps of: (1) using a both-side polishing apparatus to polish both sides of a supporting substrate constituted by a first semiconductor wafer; (2) bonding an active substrate constituted by a second semiconductor wafer onto the supporting substrate being both-side polished to form an bonded-wafer; (3) removing an unbonded portion formed at the circumference of the bonded-wafer; (4) flat grinding the active substrate of the bonded-wafer which has the unbonded portion removed to reduce the thickness thereof; (5) supporting the bonded-wafer which has been flat ground by a top ring, and then polishing the active substrate by single-wafer polishing; and (6) processing the active substrate which has been polished by single-wafer polishing to be a thin film by PACE processing.
Claim 4
Independent Claim
128 words
A method for fabricating an SOI substrate, comprising the steps of: (1) using a both-side polishing apparatus to polish both sides of a supporting substrate constituted by a first semiconductor wafer; (2) bonding an active substrate constituted by a second semiconductor wafer onto the supporting substrate being both-side polished to form an bonded-wafer; (3) removing an unbonded portion formed at the circumference of the bonded-wafer; (4) flat grinding the active substrate of the bonded-wafer which has the unbonded portion removed to reduce the thickness thereof; (5) supporting the bonded-wafer which has been flat ground by a top ring, and then polishing the active substrate by single-wafer polishing; and (6) processing the active substrate which has been polished by single-wafer polishing to be a thin film by PACE processing.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-18 | 2004-01-17 | 2004-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-18 | 2008-01-17 | 2008-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-18 | 2012-01-17 | 2012-07-18 | $7700.00 | Window Closed / Lapsed |