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US6420189B1
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Superconducting damascene interconnected for integrated circuit
Assignee: GlobalFoundries Inc
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Filing: 2001-04-27
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Granted: 2002-07-16
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Expires: 2021-04-27
Abstract
Abstract A method of forming a superconducting damascene interconnect structure, and the structure made thereby, the method includes forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the barrier layer. In one embodiment, the superconductor has a formula YBa 2 Cu 3 O 7-x , wherein x≦0.5. In another embodiment, the method includes forming a cavity in an interlevel dielectric; forming a Y—Ba—Cu alloy layer in the cavity; forming a seed layer in the cavity over the Y—Ba—Cu alloy layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy fill; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the dielectric.
Inventors
- 👤 Sergey Lopatin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:57
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4484; H10W20/42
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
57 words
A method of forming a superconducting damascene interconnect structure, comprising: forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the barrier layer.
Claim 2
Independent Claim
57 words
A method of forming a superconducting damascene interconnect structure, comprising: forming a cavity in an interlevel dielectric; forming a barrier layer in the cavity; forming a seed layer in the cavity over the barrier layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the barrier layer.
Claim 3
Dependent Claim
35 words
The method of claim 1 , wherein the barrier layer comprises one or more of Ta, TaN, TaSiN, TiSiN, WN, Co, Ni, Pd, Mo, W, NiW, NiTa, NiMo, CoW, CoTa, CoMo, PdW, PdTa, and PdMo.
Claim 4
Dependent Claim
22 words
The method of claim 2 , wherein the barrier layer is formed by CVD, PVD, HCM, electroless, electroplating, IMP, sputtering, or ALD.
Claim 5
Dependent Claim
19 words
The method of claim 1 , wherein the seed layer is formed from Cu, a Cu—Ag alloy or Ag.
Claim 6
Dependent Claim
17 words
The method of claim 4 , wherein the seed layer is formed by electrodeposition or electroless deposition.
Claim 7
Dependent Claim
18 words
The method of claim 1 , wherein the Y—Ba—Cu layer is formed by laser ablation, CVD or sputtering.
Claim 8
Dependent Claim
23 words
The method of claim 1 , wherein the step of annealing forms the Y—Ba—Cu—O superconductor from the seed layer and the Y—Ba—Cu layer.
Claim 9
Dependent Claim
22 words
The method of claim 1 , wherein the Y—Ba—Cu—O superconductor has a formula YBa 2 Cu 3 d 7-x , wherein x≦0.5.
Claim 10
Independent Claim
59 words
A method of forming a superconducting damascene interconnect structure, comprising: forming a cavity in an interlevel dielectric; forming a Y—Ba—Cu alloy layer in the cavity; forming a seed layer in the cavity over the Y—Ba—Cu alloy layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy fill; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the dielectric.
Claim 11
Independent Claim
59 words
A method of forming a superconducting damascene interconnect structure, comprising: forming a cavity in an interlevel dielectric; forming a Y—Ba—Cu alloy layer in the cavity; forming a seed layer in the cavity over the Y—Ba—Cu alloy layer; filling the cavity by electrodepositing a Y—Ba—Cu alloy fill; and annealing in oxygen flow to form a Y—Ba—Cu—O superconductor on the dielectric.
Claim 12
Dependent Claim
19 words
The method of claim 9 , wherein the Y—Ba—Cu alloy layer is formed by laser ablation, CVD or sputtering.
Claim 13
Dependent Claim
19 words
The method of claim 10 , wherein the seed layer is formed from Cu, a Cu—Ag alloy or Ag.
Claim 14
Dependent Claim
17 words
The method of claim 11 , wherein the seed layer is formed by electrodeposition or electroless deposition.
Claim 15
Dependent Claim
28 words
The method of claim 10 , wherein the step of annealing forms the Y—Ba—Cu—O superconductor from the Y—Ba—Cu alloy layer, the seed layer, and the Y—Ba—Cu alloy fill.
Claim 16
Dependent Claim
22 words
The method of claim 1 , wherein the Y—Ba—Cu—O superconductor has a formula YBa 2 Cu 3 O 7-x , wherein x≦0.5.
Claim 17
Dependent Claim
19 words
A damascene interconnect in a semiconductor device, comprising a Y—Ba—Cu—O superconductor formed in a cavity in a dielectric material.
Claim 18
Dependent Claim
19 words
A damascene interconnect in a semiconductor device, comprising a Y—Ba—Cu—O superconductor formed in a cavity in a dielectric material.
Claim 19
Dependent Claim
20 words
The superconductor damascene interconnect of claim 15 , wherein the damascene interconnect is in electrical contact with a second interconnect.
Claim 20
Dependent Claim
22 words
The superconductor damascene interconnect of claim 15 , wherein the cavity further comprises a barrier layer between the interconnect and the cavity.
Claim 21
Dependent Claim
37 words
The superconductor damascene interconnect of claim 17 , wherein the barrier layer comprises one or more of Ta, TaN, TaSiN, TiSiN, WN, Co, Ni, Pd, Mo, W, NiW, NiTa, NiMo, CoW, CoTa, CoMo, PdW, PdTa, and PdMo.
Claim 22
Dependent Claim
23 words
The superconductor damascene interconnect of claim 17 , wherein the cavity further comprises a seed layer between the interconnect and the barrier layer.
Claim 23
Dependent Claim
24 words
The superconductor damascene interconnect of claim 15 , wherein the Y—Ba—Cu—O superconductor has a formula YBa 2 Cu 3 O 7-x , wherein x≦0.5.
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