US6144099A
Expired / Lapsed
US
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Semiconductor metalization barrier
Assignee: Advanced Micro Devices Inc
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Filing: 1999-03-30
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Granted: 2000-11-07
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Expires: 2019-03-30
Abstract
Abstract A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.
Inventors
- 👤 Sergey D. Lopatin
- 👤 Shekhar Pramanick
- 👤 Dirk Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10P; H10P14/00; H10P14/40; H10P14/46; H10W20/037; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
88 words
A semiconductor device comprising: a semiconductor substrate; a first dielectric layer on said semiconductor substrate, said first dielectric layer having an opening provided therein; a first conductive layer disposed in said opening in said first dielectric layer; a second dielectric layer disposed on said first dielectric layer and said first conductive layer, said second dielectric layer having a second opening provided therein exposing a portion of said first conductive layer; a cobalt layer disposed in said second opening; and a cobalt tungsten layer disposed on said cobalt layer.
Claim 2
Dependent Claim
88 words
A semiconductor device comprising: a semiconductor substrate; a first dielectric layer on said semiconductor substrate, said first dielectric layer having an opening provided therein; a first conductive layer disposed in said opening in said first dielectric layer; a second dielectric layer disposed on said first dielectric layer and said first conductive layer, said second dielectric layer having a second opening provided therein exposing a portion of said first conductive layer; a cobalt layer disposed in said second opening; and a cobalt tungsten layer disposed on said cobalt layer.
Claim 3
Dependent Claim
30 words
The semiconductor device as claimed in claim 1 wherein said conductive material is selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.
Claim 4
Dependent Claim
18 words
The semiconductor device as claimed in claim 1 includes an exterior electrical connection to said cobalt tungsten layer.
Claim 5
Dependent Claim
33 words
The semiconductor device as claimed in claim 3 wherein said external electrical connection uses a material selected from a group consisting of copper, aluminum, gold, silver, an alloy thereof, and a combination thereof.
Claim 6
Dependent Claim
24 words
A semiconductor interconnect barrier layer comprising a layer of cobalt on said interconnect, and a layer of cobalt tungsten alloy on said cobalt layer.
Claim 7
Dependent Claim
24 words
A semiconductor interconnect barrier layer comprising a layer of cobalt on said interconnect, and a layer of cobalt tungsten alloy on said cobalt layer.
Claim 8
Dependent Claim
14 words
The barrier as claimed in claim 5 wherein said interconnect is formed of copper.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-11-07 | 2004-05-08 | 2004-11-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-11-07 | 2008-05-08 | 2008-11-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-11-07 | 2012-05-08 | 2012-11-07 | $7700.00 | Window Closed / Lapsed |