US6144096A
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Low resistivity semiconductor barrier layers and manufacturing method therefor
Assignee: Advanced Micro Devices Inc
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Filing: 1998-10-05
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Granted: 2000-11-07
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Expires: 2018-10-05
Abstract
Abstract A semiconductor, and manufacturing method therefor, is provided with a barrier/adhesion layer, having cobalt, nickel, or palladium for semiconductors having conductive materials of copper, silver or gold. The barrier/adhesion layer can be alloyed with between about 0.2% and 4% tantalum, molybdenum, or tungsten to increase barrier effectiveness and lower resistivity.
Inventors
- 👤 Sergey D. Lopatin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:23
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/40; H10W20/41; H10W20/42; H10W20/425; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; H10W20/4432; H10W20/4435
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
95 words
A semiconductor comprising: a semiconductor substrate; a dielectric layer formed on a region of said semiconductor substrate; an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a conductive area in the semiconductor; a barrier layer on said dielectric layer in said opening, including along said walls, and in conductive contact with said conductive area, said barrier layer containing a first metal from Group VIII B combined with a second metal; and a conductive material in contact with said barrier layer, said conductive material substantially fills said opening.
Claim 2
Dependent Claim
95 words
A semiconductor comprising: a semiconductor substrate; a dielectric layer formed on a region of said semiconductor substrate; an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a conductive area in the semiconductor; a barrier layer on said dielectric layer in said opening, including along said walls, and in conductive contact with said conductive area, said barrier layer containing a first metal from Group VIII B combined with a second metal; and a conductive material in contact with said barrier layer, said conductive material substantially fills said opening.
Claim 3
Dependent Claim
22 words
The semiconductor as claimed in claim 1 wherein said second metal includes a Group V B element combined in said barrier layer.
Claim 4
Dependent Claim
22 words
The semiconductor as claimed in claim 1 wherein said second metal includes a Group VI B element combined in said barrier layer.
Claim 5
Dependent Claim
27 words
The semiconductor as claimed in claim 1 wherein said second metal includes between 0.2% to 4% of a Group V B element combined in said barrier layer.
Claim 6
Dependent Claim
27 words
The semiconductor as claimed in claim 1 wherein said second metal includes between 0.2% to 4% of a Group VI B element combined in said barrier layer.
Claim 7
Dependent Claim
20 words
The semiconductor as claimed in claim 1 wherein said conductive material is a material containing a Group I B element.
Claim 8
Dependent Claim
34 words
The semiconductor as claimed in claim 1 wherein said conductive material is a material selected from the group comprising aluminum, tungsten, doped polysilicon, copper-base alloys, gold, gold-base alloys, silver, silver-base alloys, and combinations thereof.
Claim 9
Dependent Claim
99 words
A semiconductor comprising: a semiconductor substrate; a dielectric layer formed on a region of said semiconductor substrate; an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a portion of said region on said semiconductor substrate; a barrier layer on said dielectric layer in said opening, including along said walls, said barrier layer containing therefore a first metal selected from a group consisting of cobalt, nickel, palladium and combinations thereof combined with a second metal; and a conductive material in contact with said barrier layer, said conductive material substantially fills said opening.
Claim 10
Dependent Claim
99 words
A semiconductor comprising: a semiconductor substrate; a dielectric layer formed on a region of said semiconductor substrate; an opening in said dielectric layer, said opening defined by walls of said dielectric layer and exposes a portion of said region on said semiconductor substrate; a barrier layer on said dielectric layer in said opening, including along said walls, said barrier layer containing therefore a first metal selected from a group consisting of cobalt, nickel, palladium and combinations thereof combined with a second metal; and a conductive material in contact with said barrier layer, said conductive material substantially fills said opening.
Claim 11
Dependent Claim
19 words
The semiconductor as claimed in claim 8 wherein said second metal includes a tantalum alloyed to said barrier layer.
Claim 12
Dependent Claim
27 words
The semiconductor as claimed in claim 8 wherein said second metal includes a metal alloyed with said barrier layer selected from the group comprising molybdenum and tungsten.
Claim 13
Dependent Claim
23 words
The semiconductor as claimed in claim 8 wherein said second metal includes between 0.2% to 4% of tantalum alloyed in said barrier layer.
Claim 14
Dependent Claim
32 words
The semiconductor as claimed in claim 8 wherein said second metal includes between 0.2% to 4% of a metal alloyed with said barrier layer selected from the group comprising molybdenum and tungsten.
Claim 15
Dependent Claim
25 words
The semiconductor as claimed in claim 8 wherein said conductive material is a material selected from the group comprising copper, silver, gold, and combinations thereof.
Claim 16
Dependent Claim
34 words
The semiconductor as claimed in claim 8 wherein said conductive material is a material selected from the group comprising aluminum, tungsten, doped polysilicon, copper-base alloys, gold, gold-base alloys, silver, silver-base alloys, and combinations thereof.
References Cited (Backward Citations)
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