Patent US6423619B1 successfully refreshed from Google Patents.
Patent US6197628B1 successfully refreshed from Google Patents.
US6197628B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ruthenium silicide diffusion barrier layers and methods of forming same
Assignee: Micron Technology Inc
•
Filing: 1998-08-27
•
Granted: 2001-03-06
•
Expires: 2018-08-27
Abstract
Abstract A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSi x , where x is in the range of about 0.01 to about 10. The barrier layer may be formed by depositing RuSi x , by chemical vapor deposition or the barrier layer may be formed by forming a layer of ruthenium relative to a silicon containing region and performing an anneal to form RuSi x from the layer of ruthenium and the silicon containing region. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer.
Inventors
- 👤 Brian A. Vaartstra
- 👤 Eugene P. Marsh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:40
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/01125; H10P14/43; H10W20/033
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
57 words
A method for use in the fabrication of integrated circuits, the method comprising: providing a substrate assembly having a surface; and forming a diffusion barrier layer over at least a portion of the surface, wherein the diffusion barrier layer is formed of RuSi x , where x is in the range of about 0.01 to about 10.
Claim 2
Independent Claim
57 words
A method for use in the fabrication of integrated circuits, the method comprising: providing a substrate assembly having a surface; and forming a diffusion barrier layer over at least a portion of the surface, wherein the diffusion barrier layer is formed of RuSi x , where x is in the range of about 0.01 to about 10.
Claim 3
Dependent Claim
18 words
The method of claim 1 , wherein x is in the range of about 1 to about 3.
Claim 4
Dependent Claim
11 words
The method of claim 2 , wherein x is about 2.
Claim 5
Dependent Claim
19 words
The method of claim 1 , wherein forming the barrier layer includes depositing RuSi x by chemical vapor deposition.
Claim 6
Dependent Claim
41 words
The method of claim 1 , wherein forming the barrier layer includes: forming a layer of ruthenium relative to a silicon containing region; and performing an anneal to form RuSi x from the layer of ruthenium and the silicon containing region.
Claim 7
Dependent Claim
22 words
The method of claim 5 , wherein forming the layer of ruthenium includes depositing the layer of ruthenium by chemical vapor deposition.
Claim 8
Dependent Claim
45 words
The method of claim 5 , wherein performing the anneal to form RuSi x includes performing an anneal at a temperature in the range of about 4000° C. to about 1000° C. for about 0.5 minutes to about 60 minutes in an inert gas atmosphere.
Claim 9
Dependent Claim
41 words
The method of claim 7 , wherein performing the anneal to form RuSi x , includes annealing the layer of ruthenium and the silicon containing layer at a temperature of about 500° C. for about 5 minutes in a nitrogen atmosphere.
Claim 10
Dependent Claim
19 words
The method of claim 5 , wherein silicon containing region includes the at least a portion of the surface.
Claim 11
Dependent Claim
42 words
The method of claim 1 , wherein the method further includes forming at least one additional conductive material over the diffusion barrier layer, the at least one additional conductive material selected from a group of a metal and a conductive metal oxide.
Claim 12
Independent Claim
79 words
A method for use in the formation of a capacitor, the method comprising: forming a first electrode on a portion of a substrate assembly; forming a high dielectric material over at least a portion of the first electrode; and forming a second electrode over the high dielectric material, wherein at least one of the first and second electrodes comprises a barrier layer formed of RuSi x , where x is in the range of about 0.01 to about 10.
Claim 13
Independent Claim
79 words
A method for use in the formation of a capacitor, the method comprising: forming a first electrode on a portion of a substrate assembly; forming a high dielectric material over at least a portion of the first electrode; and forming a second electrode over the high dielectric material, wherein at least one of the first and second electrodes comprises a barrier layer formed of RuSi x , where x is in the range of about 0.01 to about 10.
Claim 14
Dependent Claim
18 words
The method of claim 11 , wherein x is in the range of about 1 to about 3.
Claim 15
Dependent Claim
11 words
The method of claim 12 , wherein x is about 2.0.
Claim 16
Dependent Claim
16 words
The method of claim 11 , wherein the barrier layer is formed by chemical vapor deposition.
Claim 17
Independent Claim
87 words
A method for use in the formation of a capacitor, the method comprising: providing a silicon containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon containing region of the substrate assembly, the first electrode comprising a barrier layer of RuSi x , where x is in the range of about 0.01 to about 10; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 18
Independent Claim
87 words
A method for use in the formation of a capacitor, the method comprising: providing a silicon containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon containing region of the substrate assembly, the first electrode comprising a barrier layer of RuSi x , where x is in the range of about 0.01 to about 10; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 19
Dependent Claim
18 words
The method of claim 15 , wherein x is in the range of about 1 to about 3.
Claim 20
Dependent Claim
53 words
The method of claim 15 , wherein forming the barrier layer includes: forming a layer of ruthenium on the at least a portion of the silicon containing region; and annealing the layer of ruthenium formed on the at least a portion of the silicon containing region resulting in the RuSi x barrier layer.
Claim 21
Dependent Claim
37 words
The method of claim 17 , wherein forming the layer of ruthenium includes depositing the layer of ruthenium by chemical vapor deposition, the layer of ruthenium having a thickness of about 10 Å to about 300 Å.
Claim 22
Dependent Claim
22 words
The method of claim 18 , wherein the layer of ruthenium has a thickness of about 50 Å to about 200 Å.
Claim 23
Dependent Claim
18 words
The method of claim 19 , wherein the layer of ruthenium has a thickness of about 100 Å.
Claim 24
Dependent Claim
53 words
The method of claim 18 , wherein annealing the layer of ruthenium formed on the at least a portion of the silicon containing region includes annealing at a temperature in the range of about 4000° C. to about 1000° C. for about 0.5 minutes to about 60 minutes in an inert gas atmosphere.
Claim 25
Dependent Claim
27 words
The method of claim 15 , wherein the RuSi x the barrier layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor.
Claim 26
Independent Claim
124 words
A method for use in the formation of a capacitor, the method comprising: providing a silicon containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon containing region of the substrate assembly, the forming of the first electrode comprising: forming a barrier layer of RuSi x , where x is in the range of about 0.01 to about 10, and forming one or more conductive layers relative to the RuSi x barrier layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 27
Independent Claim
124 words
A method for use in the formation of a capacitor, the method comprising: providing a silicon containing region of a substrate assembly; forming a first electrode on at least a portion of the silicon containing region of the substrate assembly, the forming of the first electrode comprising: forming a barrier layer of RuSi x , where x is in the range of about 0.01 to about 10, and forming one or more conductive layers relative to the RuSi x barrier layer, the one or more conductive layers formed of at least one of a metal or a conductive metal oxide; providing a high dielectric material over at least a portion of the first electrode; and providing a second electrode over the high dielectric material.
Claim 28
Dependent Claim
40 words
The method of claim 23 , wherein the one or more conductive layers are formed from materials selected from the group of RuO 2 , RhO 2 l MoO 2 , IrO 2 , Ru, Rh, Pd, Pt, and Ir.
Claim 29
Dependent Claim
54 words
The method of claim 23 , wherein forming the barrier layer includes: forming a layer of ruthenium on the at least a portion of the silicon containing region; and annealing the layer of ruthenium formed on the at least a portion of the silicon containing region resulting in the RuSi x , barrier layer.
Claim 30
Dependent Claim
27 words
The method of claim 23 , wherein the RuSi x , barrier layer is formed by chemical vapor deposition using a ruthenium precursor and a silicon precursor.
References Cited (Backward Citations)
US4907052A
Cited
US5168332A
Cited
US5491365A
Cited
US5270241A
Cited
US5520992A
Cited
US5561307A
Cited
US5372849A
Cited
US5392189A
Cited
US5510651A
Cited
US5362632A
Cited
US5566045A
Cited
US5581436A
Cited
US5679980A
Cited
US5555486A
Cited
US5637527A
Cited
US5618746A
Cited
US5612574A
Cited
EP0856879A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-03-05 | 2004-09-04 | 2005-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-03-05 | 2008-09-04 | 2009-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-03-05 | 2012-09-04 | 2013-03-06 | $7700.00 | Window Closed / Lapsed |