§
Luxuse
Patent Intelligence
Sign In
Patent US6146985A successfully refreshed from Google Patents.
← Back to Patent Explorer
US6146985A Expired / Lapsed US ⏱️ 0.0 years remaining

Low capacitance interconnection

Assignee: Advanced Micro Devices Inc
•
Filing: 1998-05-04
•
Granted: 2000-11-14
•
Expires: 2018-05-04
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A semiconductor device having reduced parasitic capacitance and, consequentially increased integrated circuit speed, is achieved by removing sections of dielectric interlayers which do not support conductive patterns, as by anisotropic etching, to form air gaps which can remain or are filled in with a dielectric material having a low dielectric constant. In another embodiment, a conformal dielectric coating is deposited, having a low dielectric constant.

Inventors

  • 👤 Donald L. Wollesen

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 19:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/495; H10W20/45; H10W20/48; H10W72/00; H10W72/50; H10W72/531; H10W72/536; H10W72/59; H10W72/90; H10W72/931; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983

Claims Analysis

Total Claims: 29
Claim 1
Independent Claim 118 words
A method of manufacturing a semiconductor device, which method comprises sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; and depositing a first conformal dielectric coating thereon, wherein each dielectric layer comprises air spaces between and adjoining each portion of the first dielectric material having the first conformal dielectric coating thereon and each conductive level comprises a plurality of conductive patterns separated by air spaces.
Claim 2
Independent Claim 118 words
A method of manufacturing a semiconductor device, which method comprises sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; and depositing a first conformal dielectric coating thereon, wherein each dielectric layer comprises air spaces between and adjoining each portion of the first dielectric material having the first conformal dielectric coating thereon and each conductive level comprises a plurality of conductive patterns separated by air spaces.
Claim 3
Dependent Claim 20 words
The method according to claim 1, wherein the first dielectric material is a silicon oxide, silicon nitride or silicon oxynitride.
Claim 4
Dependent Claim 21 words
The method according to claim 1, wherein the conformal dielectric coating comprises a silicon oxide, silicon nitride or a silicon oxynitride.
Claim 5
Dependent Claim 42 words
The method according to claim 1, further comprising: forming a plurality of vias electrically connecting conductive patterns of conductive layers; and forming a contact electrically connecting a conductive pattern of the first conductive layer and each active region in the semiconductor substrate.
Claim 6
Dependent Claim 18 words
The method according to claim 1, wherein the first dielectric material of each dielectric layer is the same.
Claim 7
Dependent Claim 18 words
The method according to claim 1, further comprising depositing a topside dielectric layer on the conformal dielectric coating.
Claim 8
Dependent Claim 16 words
The method according to claim 1, comprising removing sections of each dielectric layer by anisotropic etching.
Claim 9
Dependent Claim 18 words
The method according to claim 6, wherein the topside dielectric layer comprises a polyimide or other organic dielectric.
Claim 10
Dependent Claim 17 words
The method according to claim 6, further comprising forming a thermo-compression ball bond for external electrical contact.
Claim 11
Dependent Claim 18 words
The method according to claim 7, comprising removing sections of each dielectric layer in a single etching stage.
Claim 12
Dependent Claim 18 words
The method according to claim 7, comprising removing sections of each dielectric layer in a single etching stage.
Claim 13
Independent Claim 118 words
A method of manufacturing a semiconductor device, the method comprising sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate, wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; depositing a second dielectric material in each dielectric layer between and adjoining the remaining portions of the first dielectric material; wherein the second dielectric material has a dielectric constant less than the dielectric constant of the first dielectric material and depositing a first conformal dielectric coating.
Claim 14
Independent Claim 118 words
A method of manufacturing a semiconductor device, the method comprising sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate, wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; depositing a second dielectric material in each dielectric layer between and adjoining the remaining portions of the first dielectric material; wherein the second dielectric material has a dielectric constant less than the dielectric constant of the first dielectric material and depositing a first conformal dielectric coating.
Claim 15
Dependent Claim 20 words
The method according to claim 12, wherein the first dielectric material is a silicon oxide, silicon nitride or silicon oxynitride.
Claim 16
Dependent Claim 18 words
The method according to claim 12, wherein the second dielectric material is a polyimide or other organic dielectric.
Claim 17
Dependent Claim 21 words
The method according to claim 12, wherein the conformal dielectric coating comprises a silicon oxide, silicon nitride or a silicon oxynitride.
Claim 18
Dependent Claim 18 words
The method according to claim 12, further comprising depositing a topside dielectric layer on the conformal dielectric coating.
Claim 19
Dependent Claim 18 words
The method according to claim 16, wherein the topside dielectric layer comprises a polyimide or other organic dielectric.
Claim 20
Dependent Claim 42 words
The method according to claim 12, further comprising: forming a plurality of vias electrically connecting conductive patterns of conductive layers; and forming a contact electrically connecting a conductive pattern of the first conductive layer and each active region in the semiconductor substrate.
Claim 21
Dependent Claim 18 words
The method according to claim 12, wherein the first dielectric material of each dielectric layer is the same.
Claim 22
Dependent Claim 16 words
The method according to claim 12, comprising removing sections of each dielectric layer by anisotropic etching.
Claim 23
Dependent Claim 17 words
The method according to claim 16, further comprising forming a thermo-compression ball bond for external electrical contact.
Claim 24
Independent Claim 114 words
A method of manufacturing a semiconductor device, which method comprises sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; depositing a first conformal dielectric coating thereon; and depositing a second conformal dielectric coating on the first conformal dielectric coating; wherein the dielectric constant of the first conformal dielectric coating is less than the dielectric constant of the second conformal dielectric coating.
Claim 25
Independent Claim 114 words
A method of manufacturing a semiconductor device, which method comprises sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; depositing a first conformal dielectric coating thereon; and depositing a second conformal dielectric coating on the first conformal dielectric coating; wherein the dielectric constant of the first conformal dielectric coating is less than the dielectric constant of the second conformal dielectric coating.
Claim 26
Dependent Claim 30 words
The method according to claim 22, wherein the first conformal dielectric coating comprises a polyimide and the second conformal dielectric coating comprises a silicon oxide, silicon nitride or silicon oxynitride.
Claim 27
Independent Claim 148 words
A method of manufacturing a semiconductor device, the method comprising sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate, wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; depositing a second dielectric material in each dielectric layer between and adjoining the remaining portions of the first dielectric material; wherein the second dielectric material has a dielectric constant less than the dielectric constant of the first dielectric material; and depositing a first conformal dielectric coating; and depositing a second conformal dielectric coating thereon; wherein the dielectric constant of the first conformal dielectric coating is less than the dielectric constant of the second conformal dielectric coating.
Claim 28
Independent Claim 148 words
A method of manufacturing a semiconductor device, the method comprising sequentially: depositing a plurality of dielectric and conductive layers sequentially formed on one another above a semiconductor substrate, wherein each dielectric layer comprises a first dielectric material and each conductive layer comprises at least one conductive pattern; removing sections of each dielectric layer leaving only a portion of the first dielectric material substantially under each conductive pattern of the conductive layer thereon; depositing a second dielectric material in each dielectric layer between and adjoining the remaining portions of the first dielectric material; wherein the second dielectric material has a dielectric constant less than the dielectric constant of the first dielectric material; and depositing a first conformal dielectric coating; and depositing a second conformal dielectric coating thereon; wherein the dielectric constant of the first conformal dielectric coating is less than the dielectric constant of the second conformal dielectric coating.
Claim 29
Dependent Claim 30 words
The method according to claim 24, wherein the first conformal dielectric coating comprises a polyimide and the second conformal dielectric coating comprises a silicon oxide, silicon nitride or silicon oxynitride.

References Cited (Backward Citations)

US4017886A Cited
US3890638A Cited
US4933305A Cited
US5034799A Cited
GB2247986A Cited
US5612914A Cited
US5227013A Cited
US5376586A Cited
US5598028A Cited
US5413962A Cited
US5708303A Cited
US5534731A Cited
US5670828A Cited
US5654570A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2003-11-14 2004-05-15 2004-11-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2007-11-14 2008-05-15 2008-11-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2011-11-14 2012-05-15 2012-11-14 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag