US5376586A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of curing thin films of organic dielectric material
Assignee: Fujitsu Ltd
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Filing: 1993-05-19
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Granted: 1994-12-27
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Expires: 2013-05-19
Abstract
Abstract A method of curing an organic dielectric layer, such as polyimide, used in a multichip module is disclosed. The method comprises heating the uncured polyimide layer to a temperature above its glass transition temperature, and irradiating the layer with a uniform flux of electrons, as in an e-beam apparatus. The process reduces deterioration at the interface between the dielectric films and the metal layers which when high temperature thermal curing is utilized, and reduces the stress of the resulting film. Multiple dielectric layers can be applied in this manner.
Inventors
- 👤 Solomon I. Beilin
- 👤 Wen-chou V. Wang
- 👤 William T. Chou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:19
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/46; H05K3/4644; H05K3/4673; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10W99/00; H05K2201/00; H05K2201/01; H05K2201/0137; H05K2201/0154; H05K2203/00; H05K2203/09; H05K2203/092; H05K2203/11; H05K2203/1105
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
77 words
A method of curing a thin film of organic dielectric material comprising the steps of: (a) applying a thin film of said dielectric material on a base substrate; (b) raising said organic dielectric material to an elevated temperature above the glass transition temperature of the uncured material and less than the glass transition of the fully cured material; and (c) flood irradiating said material with a flux of electrons while the material is at said elevated temperature.
Claim 2
Independent Claim
77 words
A method of curing a thin film of organic dielectric material comprising the steps of: (a) applying a thin film of said dielectric material on a base substrate; (b) raising said organic dielectric material to an elevated temperature above the glass transition temperature of the uncured material and less than the glass transition of the fully cured material; and (c) flood irradiating said material with a flux of electrons while the material is at said elevated temperature.
Claim 3
Dependent Claim
20 words
The method of claim 1 wherein said thin film of said dielectric material is at least 30 μm in thickness.
Claim 4
Dependent Claim
15 words
The method of claim 2 wherein said elevated temperature is between 150° to 250° C.
Claim 5
Dependent Claim
24 words
The method of claim 1 wherein said dielectric material is a polyimide precursor dissolved in a solvent when it is applied to said substrate.
Claim 6
Dependent Claim
24 words
The method of claim 1 wherein said step of raising the temperature of said layer and said step of flood irradiating are performed simultaneously.
Claim 7
Dependent Claim
30 words
The method of claim 1 wherein said layer is raised to a temperature above the glass transition temperature of the uncured material before the step of flood irradiation is commenced.
Claim 8
Independent Claim
109 words
A method of forming a polyimide layer on an integrated circuit chip carrier, comprising the steps of: (a) providing a base substrate, (b) applying a uniformly thick liquid layer of a polyimide precursor material dissolved in a solvent on said substrate, (c) raising the temperature of said layer to a temperature above the glass transition temperature of the solvent-free polyimide precursor material and less than the glass transition of the fully cured material, (d) flood irradiating said layer with electrons while the layer is at said raised temperature, such that said layer is cured, and (e) forming a patterned metal film on the exposed surface of said cured layer.
Claim 9
Independent Claim
109 words
A method of forming a polyimide layer on an integrated circuit chip carrier, comprising the steps of: (a) providing a base substrate, (b) applying a uniformly thick liquid layer of a polyimide precursor material dissolved in a solvent on said substrate, (c) raising the temperature of said layer to a temperature above the glass transition temperature of the solvent-free polyimide precursor material and less than the glass transition of the fully cured material, (d) flood irradiating said layer with electrons while the layer is at said raised temperature, such that said layer is cured, and (e) forming a patterned metal film on the exposed surface of said cured layer.
Claim 10
Dependent Claim
19 words
The method of claim 7 wherein multiple polyimide layers are formed by repeating the sequence of steps of (b)-(d).
Claim 11
Dependent Claim
16 words
The method of claim 7 further comprising the step of forming vias through said cured layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-12-26 | 1998-06-27 | 1998-12-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-12-26 | 2002-06-27 | 2002-12-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-12-26 | 2006-06-27 | 2006-12-27 | $7700.00 | Window Closed / Lapsed |