Method for forming patterned resist layer on semiconductor body

Claim 1

A method for forming a patterned resist layer on a semiconductor body having a layer of negative-working resist thereon, consisting of a polymer or copolymer, comprising the steps of: a) irradiating a region of the negative-working resist layer in an exposure chamber in an atmosphere free from any oxidizing gases so as to polymerize irradiated areas of the negative-working resist; b) transferring the semiconductor body to a curing chamber without exposing the semiconductor body to an oxidizing atmosphere during the transfer; c) heating the layer of negative-working resist on the semiconductor body, after said irradiation step a), in the atmosphere free from any oxidizing gases at a temperature higher than room temperature and lower than that at which the resist polymer or co-polymer evaporates or thermal cross-linking of the negative-working resist in an unexposed area occurs so as to accelerate post-polymerization of the irradiated negative-working resist; d) removing the semiconductor body from the curing chamber; and e) developing the negative-working resist using a developing solution after the completion of said step d) so as to remove the resist in the unexposed area.

Claim 2

A method for forming a patterned resist layer on a semiconductor body having a layer of negative-working resist thereon, consisting of a polymer or copolymer, comprising the steps of: a) irradiating a region of the negative-working resist layer in an exposure chamber in an atmosphere free from any oxidizing gases so as to polymerize irradiated areas of the negative-working resist; b) transferring the semiconductor body to a curing chamber without exposing the semiconductor body to an oxidizing atmosphere during the transfer; c) heating the layer of negative-working resist on the semiconductor body, after said irradiation step a), in the atmosphere free from any oxidizing gases at a temperature higher than room temperature and lower than that at which the resist polymer or co-polymer evaporates or thermal cross-linking of the negative-working resist in an unexposed area occurs so as to accelerate post-polymerization of the irradiated negative-working resist; d) removing the semiconductor body from the curing chamber; and e) developing the negative-working resist using a developing solution after the completion of said step d) so as to remove the resist in the unexposed area.

Claim 8

A method for forming a patterned resist layer on a semiconductor wafer, having a negative-working resist layer thereon, consisting of a polymer or copolymer, in an exposure device having an exposure chamber, an intermediate chamber connected to the exposure chamber and a curing chamber having a gas inlet and outlet and operatively connected to the intermediate chamber, comprising the steps of: a) exposing the negative-working resist layer on the semiconductor wafer to an electron beam in the exposure chamber having a non-oxidizing atmosphere or an atmosphere free from any oxidizing gases so as to polymerize the negative-working resist; b) maintaining the atmosphere free from any oxidizing gases; c) introducing the semiconductor wafer and a non-oxidizing gas into the intermediate chamber after said exposing step a), the non-oxidizing gas raising the pressure in the chamber to a predetermined level; d) circulating heated non-oxidizing gas from the inlet to the outlet of the curing chamber to fill the curing chamber, the heated non-oxidizing gas having a temperature higher than room temperature and lower than that at which the negative-working resist evaporates or that at which thermal cross-linking of the negative-working resist in an unexposed area occurs; e) conveying the semiconductor wafer into the curing chamber and keeping the semiconductor wafer in the curing chamber for a predetermined time so as to accelerate the post-polymerization of the exposed negative-working resist; f) removing the semiconductor wafer from the curing chamber; and g) developing the negative-working resist after said step f) using a developing solution so as to remove the resist in the unexposed area.

Claim 9

A method for forming a patterned resist layer on a semiconductor wafer, having a negative-working resist layer thereon, consisting of a polymer or copolymer, in an exposure device having an exposure chamber, an intermediate chamber connected to the exposure chamber and a curing chamber having a gas inlet and outlet and operatively connected to the intermediate chamber, comprising the steps of: a) exposing the negative-working resist layer on the semiconductor wafer to an electron beam in the exposure chamber having a non-oxidizing atmosphere or an atmosphere free from any oxidizing gases so as to polymerize the negative-working resist; b) maintaining the atmosphere free from any oxidizing gases; c) introducing the semiconductor wafer and a non-oxidizing gas into the intermediate chamber after said exposing step a), the non-oxidizing gas raising the pressure in the chamber to a predetermined level; d) circulating heated non-oxidizing gas from the inlet to the outlet of the curing chamber to fill the curing chamber, the heated non-oxidizing gas having a temperature higher than room temperature and lower than that at which the negative-working resist evaporates or that at which thermal cross-linking of the negative-working resist in an unexposed area occurs; e) conveying the semiconductor wafer into the curing chamber and keeping the semiconductor wafer in the curing chamber for a predetermined time so as to accelerate the post-polymerization of the exposed negative-working resist; f) removing the semiconductor wafer from the curing chamber; and g) developing the negative-working resist after said step f) using a developing solution so as to remove the resist in the unexposed area.

Claim 10

A method for forming a patterned resist layer on a semiconductor wafer, having a negative-working resist layer thereon, consisting of a polymer or copolymer, in an exposure device having an exposure chamber, an intermediate chamber connected to the exposure chamber, and a curing chamber having a gas inlet and outlet and heating means and operatively connected to the intermediate chamber, comprising the steps of: a) exposing the negative-working resist layer on the semiconductor wafer to an electron beam in the exposing chamber having a non-oxidizing atmosphere or an atmosphere free from oxidizing gases so as to polymerize the negative-working resist; b) maintaining the atmosphere free from oxidizing gases; c) introducing the semiconductor wafer and a non-oxidizing gas into the intermediate chamber after said exposing step a), the non-oxidizing gas raising the pressure in the chamber to a predetermined level; d) introducing unheated non-oxidizing gas into the curing chamber, the non-oxidizing gas being heated by the heating means to a temperature higher than room temperature and lower than that at which the negative-working resist polymer or copolymer evaporates or that at which thermal cross-linking of the negative-working resist in an unexposed area occurs; e) conveying the semiconductor wafer into the curing chamber and keeping the semiconductor wafer in the curing chamber for a predetermined time so as to accelerate post-polymerization of the exposed negative-working resist; f) removing the semiconductor wafer from the curing chamber; and g) developing the negative-working resist after said step f) by using a developing solution so as to remove the resist in the unexposed area.

Claim 11

A method for forming a patterned resist layer on a semiconductor wafer, having a negative-working resist layer thereon, consisting of a polymer or copolymer, in an exposure device having an exposure chamber, an intermediate chamber connected to the exposure chamber, and a curing chamber having a gas inlet and outlet and heating means and operatively connected to the intermediate chamber, comprising the steps of: a) exposing the negative-working resist layer on the semiconductor wafer to an electron beam in the exposing chamber having a non-oxidizing atmosphere or an atmosphere free from oxidizing gases so as to polymerize the negative-working resist; b) maintaining the atmosphere free from oxidizing gases; c) introducing the semiconductor wafer and a non-oxidizing gas into the intermediate chamber after said exposing step a), the non-oxidizing gas raising the pressure in the chamber to a predetermined level; d) introducing unheated non-oxidizing gas into the curing chamber, the non-oxidizing gas being heated by the heating means to a temperature higher than room temperature and lower than that at which the negative-working resist polymer or copolymer evaporates or that at which thermal cross-linking of the negative-working resist in an unexposed area occurs; e) conveying the semiconductor wafer into the curing chamber and keeping the semiconductor wafer in the curing chamber for a predetermined time so as to accelerate post-polymerization of the exposed negative-working resist; f) removing the semiconductor wafer from the curing chamber; and g) developing the negative-working resist after said step f) by using a developing solution so as to remove the resist in the unexposed area.

Claim 12

A method for forming a patterned resist layer on a semiconductor wafer, having a negative-working resist layer, consisting of a polymer or copolymer, thereon, in an exposure device having an exposure chamber, an intermediate chamber connected to the exposure chamber and a curing chamber having pressure control means and heating means and operatively connected to the intermediate chamber, comprising the steps of: a) exposing the negative-working resist layer on the semiconductor wafer to an electron beam in the exposure chamber, having an atmosphere free from oxidizing gases so as to polymerize the negative-working resist; b) maintaining the atmosphere free from oxidizing gases; c) conveying the semiconductor wafer into the intermediate chamber having an atmosphere free from oxidizing gasses after said exposing step a), and introducing a non-oxidizing gas for raising the pressure in the chamber to a predetermined level; d) conveying the semiconductor wafer into the curing chamber and keeping the semiconductor wafer in the curing chamber while maintaining the non-oxidizing gas, for a time less than or equal to the predetermined exposure time at a temperature higher than room temperature and less than that at which thermal cross-linking of the negative-working resist in an unexposed area of the negative-working layer occurs, so as to accelerate post-polymerization of the exposed negative-working resist; e) removing the semiconductor wafer from the curing chamber; and f) developing the negative-working resist after said step e) using a developing solution so as to remove the negative-working resist in the unexposed area.

Claim 13

A method for forming a patterned resist layer on a semiconductor wafer, having a negative-working resist layer, consisting of a polymer or copolymer, thereon, in an exposure device having an exposure chamber, an intermediate chamber connected to the exposure chamber and a curing chamber having pressure control means and heating means and operatively connected to the intermediate chamber, comprising the steps of: a) exposing the negative-working resist layer on the semiconductor wafer to an electron beam in the exposure chamber, having an atmosphere free from oxidizing gases so as to polymerize the negative-working resist; b) maintaining the atmosphere free from oxidizing gases; c) conveying the semiconductor wafer into the intermediate chamber having an atmosphere free from oxidizing gasses after said exposing step a), and introducing a non-oxidizing gas for raising the pressure in the chamber to a predetermined level; d) conveying the semiconductor wafer into the curing chamber and keeping the semiconductor wafer in the curing chamber while maintaining the non-oxidizing gas, for a time less than or equal to the predetermined exposure time at a temperature higher than room temperature and less than that at which thermal cross-linking of the negative-working resist in an unexposed area of the negative-working layer occurs, so as to accelerate post-polymerization of the exposed negative-working resist; e) removing the semiconductor wafer from the curing chamber; and f) developing the negative-working resist after said step e) using a developing solution so as to remove the negative-working resist in the unexposed area.