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US4348473A Expired / Lapsed US ⏱️ 0.0 years remaining

Dry process for the production of microelectronic devices

Assignee: Xerox Corp
•
Filing: 1981-03-04
•
Granted: 1982-09-07
•
Expires: 2001-03-04
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Abstract

Abstract A dry process for the manufacture of microelectronic devices from a work piece, which may be carried out entirely in a vacuum chamber, and which involves the coating of the work piece with a thin film of a monomer, selectively polymerizing the monomer according to a pattern of the microelectronic device desired, heating the layer of monomer to evaporate unpolymerized monomer to expose electronic circuit materials thereunder, removing the exposed electronic circuit materials, and stripping the polymerized monomer resist from the surface of the work piece.

Inventors

  • 👤 Koji Okumura
  • 👤 Franklin D. Saeva

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 04:54
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427; G03F7/16; G03F7/167; G03F7/20; G03F7/2051; G03F7/2059; G03F7/36; H; H05; H05K; H05K3/00; H05K3/02; H05K3/06; H05K3/061

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 153 words
A method for the preparation of microelectronic devices which comprises: providing in a vacuum chamber a substrate having coated thereon one or more substantially uniform layers of electronic circuit materials, and carrying out the following steps seriatum without intermediate withdrawal and re-insertion of the coated substrate from the vacuum chamber; applying reduced pressure to the vacuum chamber; depositing a thin layer of a monomer on said coated substrate while maintaining the coated substrate below the vaporization temperature of the monomer at the pressure within the vacuum chamber; selectively polymerizing said thin layer of monomer by electromagnetic radiation or electron beam means according to a pattern of the microelectronic device desired; heating said selectively polymerized thin layer to evaporate unpolymerized monomers to thus expose the coated substrate under the layer of monomer according to said pattern; removing the electronic circuit materials so exposed; and removing the layer of polymerized monomer from the coated substrate.
Claim 2
Independent Claim 153 words
A method for the preparation of microelectronic devices which comprises: providing in a vacuum chamber a substrate having coated thereon one or more substantially uniform layers of electronic circuit materials, and carrying out the following steps seriatum without intermediate withdrawal and re-insertion of the coated substrate from the vacuum chamber; applying reduced pressure to the vacuum chamber; depositing a thin layer of a monomer on said coated substrate while maintaining the coated substrate below the vaporization temperature of the monomer at the pressure within the vacuum chamber; selectively polymerizing said thin layer of monomer by electromagnetic radiation or electron beam means according to a pattern of the microelectronic device desired; heating said selectively polymerized thin layer to evaporate unpolymerized monomers to thus expose the coated substrate under the layer of monomer according to said pattern; removing the electronic circuit materials so exposed; and removing the layer of polymerized monomer from the coated substrate.
Claim 3
Dependent Claim 39 words
A method according to claim 1 in which the coated substrate is maintained at about -50° C. in a vacuum chamber maintained at about 10 -5 to 10 -6 torr during the deposition of the thin layer of monomer.
Claim 4
Dependent Claim 27 words
A method according to claim 2 in which the thin layer of monomer is selectively polymerized by an electron beam device controlled by a raster scan input.
Claim 5
Dependent Claim 20 words
A method according to claim 3 in which the electron beam is focused to a diameter of about 0.1 micron.
Claim 6
Dependent Claim 24 words
A method according to claim 2 in which the unpolymerized monomer is evaporated by permitting the monomer coated substrate to come to ambient temperature.
Claim 7
Dependent Claim 20 words
A method according to claim 2 in which the exposed electronic circuit materials are removed by a plasma etching process.
Claim 8
Dependent Claim 22 words
A method according to claim 2 in which the mask of polymerized monomer is removed from the coated substrate by plasma stripping.
Claim 9
Dependent Claim 18 words
A method according to claim 2 in which the monomer is a vinyl monomer or an epoxy monomer.
Claim 10
Dependent Claim 12 words
A method according to claim 8 in which the monomer is N-vinylcarbazole.

References Cited (Backward Citations)

US3113896A Cited
US3885076A Cited
US3920454A Cited
US4080721A Cited
US4114255A Cited
US4102733A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1985-09-06 1986-03-08 1986-09-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1989-09-06 1990-03-08 1990-09-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1993-09-06 1994-03-08 1994-09-07 $7700.00 Window Closed / Lapsed

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