US4386152A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma developable electron resist process
Assignee: Honeywell Inc
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Filing: 1981-06-19
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Granted: 1983-05-31
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Expires: 2001-06-19
Abstract
Abstract A method of fabricating a negative electron resist pattern for microcircuit is disclosed which combines electron beam resist exposure with dry plasma etch developing. The technique utilizes a coating of a barrier polymer over the negative electron resist film prior to exposure to the electron beam film to prevent vacuum sublimation of the constituents of the negative electron resist film.
Inventors
- 👤 Juey H. Lai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 11:06
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/027; G03F7/032; G03F7/033; G03F7/09; G03F7/095; G03F7/0955; G03F7/26; G03F7/38
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
153 words
A method of fabricating an electron resist pattern comprising the steps of applying a coating of a negative electron resist film material comprising a mixture of an aliphatic vinyl base polymer having a relatively high plasma etch rate and a monomer having a relatively low plasma etch rate to a substrate, said monomer being one selected from the group consisting of vinyl stearate, methacrylamide, N-t-butyl acrylamide, p-vinylacetanilide, N-vinylcarbazole and diphenylacetylene; applying a coating of a barrier polymer film over said negative electron resist film to prevent vacuum sublimation of said monomer, wherein said barrier polymer is one which is soluble in a solvent which is not a solvent for said base polymer or said monomer; exposing said negative electron resist film to an electron beam describing a predetermined pattern; dissolving away said coating of barrier polymer; baking said resist film prior to development thereof; and developing said exposed resist pattern by plasma etching.
Claim 2
Independent Claim
153 words
A method of fabricating an electron resist pattern comprising the steps of applying a coating of a negative electron resist film material comprising a mixture of an aliphatic vinyl base polymer having a relatively high plasma etch rate and a monomer having a relatively low plasma etch rate to a substrate, said monomer being one selected from the group consisting of vinyl stearate, methacrylamide, N-t-butyl acrylamide, p-vinylacetanilide, N-vinylcarbazole and diphenylacetylene; applying a coating of a barrier polymer film over said negative electron resist film to prevent vacuum sublimation of said monomer, wherein said barrier polymer is one which is soluble in a solvent which is not a solvent for said base polymer or said monomer; exposing said negative electron resist film to an electron beam describing a predetermined pattern; dissolving away said coating of barrier polymer; baking said resist film prior to development thereof; and developing said exposed resist pattern by plasma etching.
Claim 3
Dependent Claim
14 words
The method according to claim 1 wherein said aliphatic vinyl base polymer contains chlorine.
Claim 4
Dependent Claim
24 words
The method according to claim 2 wherein said aliphatic vinyl base polymer is one selected from the group consisting of poly(trichloroethylmethacrylate) and poly(methyl α-chloroacrylate).
Claim 5
Dependent Claim
14 words
The method according to claim 3 wherein said aliphatic vinyl base polymer is poly(trichloroethylmethacrylate).
Claim 6
Dependent Claim
11 words
The method according to claim 4 wherein said monomer is diphenylacetylene.
Claim 7
Independent Claim
20 words
The method according to any one of claims 1-3 wherein said barrier polymer coating is one which is water soluble.
Claim 8
Independent Claim
27 words
The method according to any one of claims 1-3 wherein said barrier polymer is one selected from the group consisting of poly(vinyl alcohol) and, poly(vinylpyrroidone) and polyacrylamide.
Claim 9
Dependent Claim
13 words
The method according to claim 7 wherein said barrier polymer is poly(vinyl alcohol).
Claim 10
Dependent Claim
40 words
The method according to claim 1 further comprising the steps of: drying said coating of said negative electron resist after application to said substrate; and drying said coating of said barrier polymer after application to said negative electron resist film.
Claim 11
Dependent Claim
24 words
The method according to claim 1 wherein said coating of said negative electron resist material is applied by spin coating from a suitable solvent.
Claim 12
Dependent Claim
41 words
The method according to claim 1 wherein said baking step after the removal of said barrier polymer is conducted at a temperature high enough to sublime said monomer but below the temperature at which thermal polymerization of the monomer will occur.
Claim 13
Dependent Claim
19 words
The method according to claim 1 wherein the etching agent in the plasma etching atmosphere is O 2 .
Claim 14
Dependent Claim
26 words
The method according to claim 1 wherein the plasma etching agent in the plasma etching atmosphere comprises a mixture of CF 4 and O 2 .
Claim 15
Independent Claim
198 words
A method of fabricating an electron resist pattern comprising the steps of applying a coating of a negative electron resist film material comprising a mixture of an aliphatic vinyl base polymer having a relatively high plasma etch rate wherein said polymer is one selected from the group consisting of poly(trichloroethylmethacrylate) and poly(methyl α-chloroacrylate) and a monomer having a relatively low plasma etch rate wherein said monomer is one selected from the group consisting of vinyl stearate, methacrylamide, N-t-butyl acrylamide, p-vinylacetanilide, N-vinylcarbazole and diphenylacetylene; drying said coated substrate; applying a coating of a water soluble barrier polymer film containing a polymer selected from the group consisting of poly(vinyl alcohol) and, poly(vinylpyrroidone) and polyacrylamide over said negative electron resist film to prevent vacuum sublimation of said monomer; drying said barrier layer; exposing said negative electron resist film to an electron beam describing a predetermined pattern; dissolving away said coating of barrier polymer; baking said resist film prior to development thereof at a temperature high enough to sublime said monomer but below its thermal polymerization temperature, and developing said exposed resist pattern by plasma etching in an atmosphere containing O 2 or a mixture of O 2 and CF 4 .
Claim 16
Independent Claim
198 words
A method of fabricating an electron resist pattern comprising the steps of applying a coating of a negative electron resist film material comprising a mixture of an aliphatic vinyl base polymer having a relatively high plasma etch rate wherein said polymer is one selected from the group consisting of poly(trichloroethylmethacrylate) and poly(methyl α-chloroacrylate) and a monomer having a relatively low plasma etch rate wherein said monomer is one selected from the group consisting of vinyl stearate, methacrylamide, N-t-butyl acrylamide, p-vinylacetanilide, N-vinylcarbazole and diphenylacetylene; drying said coated substrate; applying a coating of a water soluble barrier polymer film containing a polymer selected from the group consisting of poly(vinyl alcohol) and, poly(vinylpyrroidone) and polyacrylamide over said negative electron resist film to prevent vacuum sublimation of said monomer; drying said barrier layer; exposing said negative electron resist film to an electron beam describing a predetermined pattern; dissolving away said coating of barrier polymer; baking said resist film prior to development thereof at a temperature high enough to sublime said monomer but below its thermal polymerization temperature, and developing said exposed resist pattern by plasma etching in an atmosphere containing O 2 or a mixture of O 2 and CF 4 .
Claim 17
Dependent Claim
35 words
The method according to claim 14 wherein said base polymer is poly(trichloroethylmethacrylate), said monomer is diphenylacetylene, said barrier layer is poly(vinyl alcohol) and the etching agent in said plasma etching atmosphere is O 2 .
References Cited (Backward Citations)
US4126466A
Cited
US4241165A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-30 | 1986-11-29 | 1987-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-30 | 1990-11-29 | 1991-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-30 | 1994-11-29 | 1995-05-31 | $7700.00 | Window Closed / Lapsed |