Patent US6136511A successfully refreshed from Google Patents.
US6136511A
Expired / Lapsed
US
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Method of patterning substrates using multilayer resist processing
Assignee: Micron Technology Inc
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Filing: 1999-01-20
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Granted: 2000-10-24
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Expires: 2019-01-20
Abstract
Abstract The invention includes a multilayer resist method of patterning a substrate. In one implementation, a first etch mask layer is formed over a substrate. A second etch mask layer is deposited over the first etch mask layer at a temperature of less than or equal to 20° C. A resist layer is formed and patterned over the second etch mask layer. The second etch mask layer is etched through, through an opening formed in the resist layer. The first etch mask layer is etched through using at least the etched second mask layer as a mask. In one implementation, a first etch mask layer is formed over a substrate. A second etch mask layer comprising a silanol is formed over the first etch mask layer. The silanol of the second etch mask layer is converted to a silicon oxide. H 2 O from the second etch mask layer is driven out at a temperature of at least about 100° C. A resist layer is formed and patterned over the silicon oxide containing second etch mask layer. The second etch mask layer is etched through, through an opening formed in the resist layer. The first etch mask layer is etched through using at least the etched second mask layer as a mask. After etching through the first etch mask layer, etching is conducted into a substrate layer beneath the first etch mask layer using at least the etched first mask layer as a mask. After etching into the substrate layer, all of the first etch mask layer and any remaining second etch mask layer are removed from the substrate.
Inventors
- 👤 Alan R. Reinberg
- 👤 J. Brett Rolfson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:50
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
95 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C., the second etch mask layer not comprising photoresist; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; and etching through the first etch mask layer using at least the etched second mask layer as a mask.
Claim 2
Dependent Claim
95 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C., the second etch mask layer not comprising photoresist; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; and etching through the first etch mask layer using at least the etched second mask layer as a mask.
Claim 3
Dependent Claim
25 words
The multilayer resist method of patterning a substrate of claim 1 wherein the temperature during the depositing is less than or equal to 10° C.
Claim 4
Dependent Claim
25 words
The multilayer resist method of patterning a substrate of claim 1 wherein the temperature during the depositing is less than or equal to 0° C.
Claim 5
Dependent Claim
37 words
The multilayer resist method of patterning a substrate of claim 1 further comprising after the depositing, processing the second etch mask layer at a temperature of at least about 100° C. prior to forming the resist layer.
Claim 6
Dependent Claim
40 words
The multilayer resist method of patterning a substrate of claim 1 further comprising after the depositing, processing the second etch mask layer at a temperature from 100° C. to no greater than 250° C. prior to forming the resist layer.
Claim 7
Dependent Claim
107 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and after the depositing, transforming the second etch mask layer into a different predominate composition prior to forming the resist layer.
Claim 8
Dependent Claim
107 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and after the depositing, transforming the second etch mask layer into a different predominate composition prior to forming the resist layer.
Claim 9
Dependent Claim
117 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and after the depositing, transforming the second etch mask layer into a different predominate composition prior to forming the resist layer without depositing or implanting into the second etch mask layer.
Claim 10
Dependent Claim
117 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and after the depositing, transforming the second etch mask layer into a different predominate composition prior to forming the resist layer without depositing or implanting into the second etch mask layer.
Claim 11
Dependent Claim
68 words
The multilayer resist method of patterning a substrate of claim 1 further comprising: after etching through the first etch mask layer, etching into a substrate layer beneath the first etch mask layer using at least the etched first mask layer as a mask; and after etching into the substrate layer, removing all of the first etch mask layer and any remaining second etch mask layer from the substrate.
Claim 12
Dependent Claim
36 words
The multilayer resist method of patterning a substrate of claim 1 wherein the second etch mask layer has a thickness of from about 200 Angstroms to about 2000 Angstroms when the resist layer is formed thereover.
Claim 13
Dependent Claim
102 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and wherein the depositing of the second mask layer comprises combining SiH 4 and an oxidant.
Claim 14
Dependent Claim
102 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and wherein the depositing of the second mask layer comprises combining SiH 4 and an oxidant.
Claim 15
Dependent Claim
105 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and wherein the depositing of the second mask layer comprises combining SiH 4 and H 2 O 2 .
Claim 16
Dependent Claim
105 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and wherein the depositing of the second mask layer comprises combining SiH 4 and H 2 O 2 .
Claim 17
Dependent Claim
98 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and wherein the second mask layer comprises a silanol as initially deposited.
Claim 18
Dependent Claim
98 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; depositing a second etch mask layer over the first etch mask layer at a temperature of less than or equal to 20° C.; forming and patterning a resist layer over the second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; and wherein the second mask layer comprises a silanol as initially deposited.
Claim 19
Dependent Claim
62 words
The multilayer resist method of patterning a substrate of claim 1 comprising forming the opening in the patterned resist layer to have a minimum open dimension of less than or equal to 0.2 micron, the etching through the first mask layer forming an opening through the first mask layer having a minimum open dimension of less than or equal to 0.2 micron.
Claim 20
Dependent Claim
114 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; forming a second etch mask layer comprising a silanol over the first etch mask layer; converting the silanol of the second etch mask layer to a silicon oxide; driving H 2 O from the second etch mask layer at a temperature of at least about 100° C.; forming and patterning a resist layer over the silicon oxide containing second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; and etching through the first etch mask layer using at least the etched second mask layer as a mask.
Claim 21
Dependent Claim
114 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; forming a second etch mask layer comprising a silanol over the first etch mask layer; converting the silanol of the second etch mask layer to a silicon oxide; driving H 2 O from the second etch mask layer at a temperature of at least about 100° C.; forming and patterning a resist layer over the silicon oxide containing second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; and etching through the first etch mask layer using at least the etched second mask layer as a mask.
Claim 22
Dependent Claim
26 words
The multilayer resist method of patterning a substrate of claim 14 wherein the driving removes only some of the water present in the second mask layer.
Claim 23
Dependent Claim
23 words
The multilayer resist method of patterning a substrate of claim 14 wherein the driving removes all water present in the second mask layer.
Claim 24
Dependent Claim
36 words
The multilayer resist method of patterning a substrate of claim 14 wherein the second etch mask layer has a thickness of from about 200 Angstroms to about 2000 Angstroms when the resist layer is formed thereover.
Claim 25
Dependent Claim
24 words
The multilayer resist method of patterning a substrate of claim 14 wherein the etching through the first etch mask layer comprises reactive ion etching.
Claim 26
Dependent Claim
68 words
The multilayer resist method of patterning a substrate of claim 14 further comprising: after etching through the first etch mask layer, etching into a substrate layer beneath the first etch mask layer using at least the etched first mask layer as a mask; and after etching into the substrate layer, removing all of the first etch mask layer and any remaining second etch mask layer from the substrate.
Claim 27
Dependent Claim
26 words
The multilayer resist method of patterning a substrate of claim 14 wherein the forming of the second mask layer comprises combining SiH 4 and an oxidant.
Claim 28
Dependent Claim
29 words
The multilayer resist method of patterning a substrate of claim 14 wherein the forming of the second mask layer comprises combining SiH 4 and H 2 O 2 .
Claim 29
Dependent Claim
26 words
The multilayer resist method of patterning a substrate of claim 14 wherein the driving comprises a driving temperature of less than or equal to 250° C.
Claim 30
Dependent Claim
16 words
The multilayer resist method of patterning a substrate of claim 14 wherein the resist comprises photoresist.
Claim 31
Dependent Claim
18 words
The multilayer resist method of patterning a substrate of claim 14 wherein said etchings are both totally dry.
Claim 32
Dependent Claim
18 words
The multilayer resist method of patterning a substrate of claim 14 wherein the silanol comprises an organic silanol.
Claim 33
Dependent Claim
21 words
The multilayer resist method of patterning a substrate of claim 25 wherein the organic silanol comprises CH 3 Si(OH) 3 .
Claim 34
Dependent Claim
18 words
The multilayer resist method of patterning a substrate of claim 14 wherein the silanol comprises an inorganic silanol.
Claim 35
Dependent Claim
20 words
The multilayer resist method of patterning a substrate of claim 14 wherein the first etch mask layer comprises a polymer.
Claim 36
Dependent Claim
62 words
The multilayer resist method of patterning a substrate of claim 14 comprising forming the opening in the patterned resist layer to have a minimum open dimension of less than or equal to 0.2 micron, the etching through the first mask layer forming an opening through the first mask layer having a minimum open dimension of less than or equal to 0.2 micron.
Claim 37
Dependent Claim
177 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; combining a silane and H 2 O 2 to form a second etch mask layer comprising a silanol over the first etch mask layer; converting the silanol of the second etch mask layer to a silicon oxide; driving H 2 O from the second etch mask layer at a temperature of at least about 100° C.; forming and patterning a resist layer over the silicon oxide containing second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; after etching through the first etch mask layer, etching into a substrate layer beneath the first etch mask layer using at least the etched first mask layer as a mask; and after etching into the substrate layer, removing all of the first etch mask layer and any remaining second etch mask layer from the substrate.
Claim 38
Dependent Claim
177 words
A multilayer resist method of patterning a substrate comprising: forming a first etch mask layer over a substrate; combining a silane and H 2 O 2 to form a second etch mask layer comprising a silanol over the first etch mask layer; converting the silanol of the second etch mask layer to a silicon oxide; driving H 2 O from the second etch mask layer at a temperature of at least about 100° C.; forming and patterning a resist layer over the silicon oxide containing second etch mask layer; etching through the second etch mask layer through an opening formed in the resist layer; etching through the first etch mask layer using at least the etched second mask layer as a mask; after etching through the first etch mask layer, etching into a substrate layer beneath the first etch mask layer using at least the etched first mask layer as a mask; and after etching into the substrate layer, removing all of the first etch mask layer and any remaining second etch mask layer from the substrate.
Claim 39
Dependent Claim
26 words
The multilayer resist method of patterning a substrate of claim 30 wherein the driving removes only some of the water present in the second mask layer.
Claim 40
Dependent Claim
23 words
The multilayer resist method of patterning a substrate of claim 30 wherein the driving removes all water present in the second mask layer.
Claim 41
Dependent Claim
18 words
The multilayer resist method of patterning a substrate of claim 30 wherein the silanol is an organic silanol.
Claim 42
Dependent Claim
21 words
The multilayer resist method of patterning a substrate of claim 33 wherein the organic silanol comprises CH 3 Si(OH) 3 .
Claim 43
Dependent Claim
18 words
The multilayer resist method of patterning a substrate of claim 30 wherein the silanol is an inorganic silanol.
Claim 44
Dependent Claim
24 words
The multilayer resist method of patterning a substrate of claim 30 wherein the driving comprises a driving temperature of at least about 350° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-24 | 2004-04-24 | 2004-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-24 | 2008-04-24 | 2008-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-24 | 2012-04-24 | 2012-10-24 | $7700.00 | Window Closed / Lapsed |