US6004729A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Methods of improving photoresist adhesion for integrated circuit fabrication
Assignee: Samsung Electronics Co Ltd
•
Filing: 1997-10-31
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Granted: 1999-12-21
•
Expires: 2017-10-31
Abstract
Abstract A method of forming an integrated circuit device includes the steps of forming a conductive pattern on an integrated circuit device, and forming an insulating layer on the conductive pattern and on the integrated circuit substrate. An upper surface portion of the insulating layer opposite the substrate is removed, and a photoresist layer is formed on the insulating layer after the step of removing the upper surface portion. The photoresist layer is patterned, and exposed portions of the insulating layer are etched using the patterned photoresist layer as an etching mask thereby forming contact holes through the insulating layer.
Inventors
- 👤 Yong-Tae Bae
- 👤 Do-Han Lee
- 👤 Ho-Ki Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:03
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/082; H10P; H10P76/00; H10P76/20; G; G03; G03F; G03F7/00; G03F7/16; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/73; H10W20/093; H10W20/096; G03F7/004; G03F7/085; Y; Y10; Y10S; Y10S438/00; Y10S438/964; Y10S438/974
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
88 words
A method of fabricating an integrated circuit device, said method comprising the steps of: forming a conductive pattern on an integrated circuit substrate; forming an insulating layer on said conductive pattern and on said integrated circuit substrate; increasing a surface roughness of said insulating layer opposite said substrate by removing an upper surface portion of said insulating layer opposite said substrate; and forming a photoresist layer on said insulating layer after said step of increasing the surface roughness of said insulating layer by removing said upper surface portion.
Claim 2
Independent Claim
88 words
A method of fabricating an integrated circuit device, said method comprising the steps of: forming a conductive pattern on an integrated circuit substrate; forming an insulating layer on said conductive pattern and on said integrated circuit substrate; increasing a surface roughness of said insulating layer opposite said substrate by removing an upper surface portion of said insulating layer opposite said substrate; and forming a photoresist layer on said insulating layer after said step of increasing the surface roughness of said insulating layer by removing said upper surface portion.
Claim 3
Dependent Claim
20 words
A method according to claim 1 wherein said removing step comprises etching said upper surface portion of said insulating layer.
Claim 4
Dependent Claim
24 words
A method according to claim 1 wherein said insulating layer is formed having a thickness in the range of 1000 Angstroms to 1,500 Angstroms.
Claim 5
Dependent Claim
25 words
A method according to claim 3 wherein said removing step comprises removing in the range of 200 Angstroms to 500 Angstroms of said insulating layer.
Claim 6
Dependent Claim
18 words
A method according to claim 4 wherein said removing step comprises removing 200 Angstroms of said insulating layer.
Claim 7
Dependent Claim
25 words
A method according to claim 1 wherein said insulating layer comprises one of a phosphorus silicate glass (PSG) layer or an undoped oxide (UDO) layer.
Claim 8
Dependent Claim
46 words
A method according to claim 1 wherein said step of increasing the surface roughness of said insulating layer by removing said upper surface portion comprises etching said insulating layer with an etchant solution comprising a mixture of de-ionized water and HF before forming the photoresist layer.
Claim 9
Dependent Claim
20 words
A method according to claim 7 wherein a ratio of said deionized water to said HF is less than 2000:1.
Claim 10
Dependent Claim
33 words
A method according to claim 1 wherein said removing step is followed by the step of: forming a thin oxide layer on said insulating layer before said step of forming said photoresist layer.
Claim 11
Dependent Claim
23 words
A method according to claim 9 wherein said oxide forming step comprises performing an H 2 O 2 treatment on said insulating layer.
Claim 12
Dependent Claim
22 words
A method according to claim 9 wherein said oxide forming step comprises performing an O 2 plasma treatment on said insulating layer.
Claim 13
Dependent Claim
28 words
A method according to claim 7 wherein said removing step is followed by the step of: drying said insulating layer before said step of forming said photoresist layer.
Claim 14
Dependent Claim
30 words
A method according to claim 1 wherein said step of forming said conductive pattern is preceded by the step of: forming a lower insulating layer on said integrated circuit substrate.
Claim 15
Dependent Claim
15 words
A method according to claim 1 wherein said conductive pattern comprises a patterned metal layer.
Claim 16
Dependent Claim
45 words
A method according to claim 1 further comprising the steps of: patterning said photoresist layer; etching exposed portions of said insulating layer using said patterned photoresist layer as an etching mask thereby forming contact holes through said insulating layer; and removing said patterned photoresist layer.
Claim 17
Independent Claim
116 words
A method of forming an integrated circuit device, said method comprising the steps of: forming a conductive pattern on an integrated circuit substrate; forming an insulating layer on said conductive pattern and on said integrated circuit substrate; increasing a surface roughness of said insulating layer opposite said substrate by removing an upper surface portion of said insulating layer opposite said substrate; forming a photoresist layer on said insulating layer after said step of increasing the surface roughness of said insulating layer by removing said upper surface portion; patterning said photoresist layer; and etching exposed portions of said insulating layer using said patterned photoresist layer as an etching mask thereby forming contact holes through said insulating layer.
Claim 18
Independent Claim
116 words
A method of forming an integrated circuit device, said method comprising the steps of: forming a conductive pattern on an integrated circuit substrate; forming an insulating layer on said conductive pattern and on said integrated circuit substrate; increasing a surface roughness of said insulating layer opposite said substrate by removing an upper surface portion of said insulating layer opposite said substrate; forming a photoresist layer on said insulating layer after said step of increasing the surface roughness of said insulating layer by removing said upper surface portion; patterning said photoresist layer; and etching exposed portions of said insulating layer using said patterned photoresist layer as an etching mask thereby forming contact holes through said insulating layer.
Claim 19
Dependent Claim
22 words
A method according to claim 16 wherein said etching step comprises wet etching said insulating layer and dry etching said insulating layer.
Claim 20
Dependent Claim
20 words
A method according to claim 16 wherein said removing step comprises etching said upper surface portion of said insulating layer.
Claim 21
Dependent Claim
24 words
A method according to claim 16 wherein said insulating layer is formed having a thickness in the range of 1000 Angstroms to 1,500 Angstroms.
Claim 22
Dependent Claim
25 words
A method according to claim 19 wherein said removing step comprises removing in the range of 200 Angstroms to 500 Angstroms of said insulating layer.
Claim 23
Dependent Claim
18 words
A method according to claim 20 wherein said removing step comprises removing 200 Angstroms of said insulating layer.
Claim 24
Dependent Claim
25 words
A method according to claim 16 wherein said insulating layer comprises one of a phosphorus silicate glass (PSG) layer or an undoped oxide (UDO) layer.
Claim 25
Dependent Claim
46 words
A method according to claim 16 wherein said step of increasing the surface roughness of said insulating layer by removing said upper surface portion comprises etching said insulating layer with an etchant solution comprising a mixture of de-ionized water and HF before forming the photoresist layer.
Claim 26
Dependent Claim
20 words
A method according to claim 23 wherein a ratio of said de-ionized water to said HF is less than 2000:1.
Claim 27
Dependent Claim
33 words
A method according to claim 16 wherein said removing step is followed by the step of: forming a thin oxide layer on said insulating layer before said step of forming said photoresist layer.
Claim 28
Dependent Claim
23 words
A method according to claim 25 wherein said oxide forming step comprises performing an H 2 O 2 treatment on said insulating layer.
Claim 29
Dependent Claim
22 words
A method according to claim 25 wherein said oxide forming step comprises performing an O 2 plasma treatment on said insulating layer.
Claim 30
Dependent Claim
28 words
A method according to claim 23 wherein said removing step is followed by the step of: drying said insulating layer before said step of forming said photoresist layer.
Claim 31
Dependent Claim
30 words
A method according to claim 16 wherein said step of forming said conductive pattern is preceded by the step of: forming a lower insulating layer on said integrated circuit substrate.
Claim 32
Dependent Claim
15 words
A method according to claim 16 wherein said conductive pattern comprises a patterned metal layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2002-12-20 | 2003-06-21 | 2003-12-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-12-20 | 2007-06-21 | 2007-12-21 | $3760.00 | Window Closed / Lapsed |
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