Patent US1610932A successfully refreshed from Google Patents.
Patent US6080526A successfully refreshed from Google Patents.
US6080526A
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Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
Assignee: Honeywell International Inc
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Filing: 1998-02-24
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Granted: 2000-06-27
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Expires: 2018-02-24
Abstract
Abstract A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially in between metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion of the dielectric layer and a relatively less hardened underlying portion of the dielectric layer.
Inventors
- 👤 Jingjun Yang
- 👤 Lynn Forester
- 👤 Dong Kyu Choi
- 👤 Shi-Qing Wang
- 👤 Neil H. Hendricks
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6926; H10P14/65; H10P14/6516; H10P14/6536; H10P14/6539; H10P14/6925; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/093; H10W20/095; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; Y; Y10; Y10S; Y10S430/00; Y10S430/143
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
71 words
A process for forming a dielectric film on a substrate which comprises applying and drying a polymeric, dielectric composition layer onto a substrate and exposing the dried layer to electron beam radiation under conditions sufficient to partially cure the dielectric composition layer and wherein the exposing forms a relatively more harden ed topmost portion of the dielectric composition layer and a relatively less hardened underlying portion of the dielectric composition layer.
Claim 2
Dependent Claim
71 words
A process for forming a dielectric film on a substrate which comprises applying and drying a polymeric, dielectric composition layer onto a substrate and exposing the dried layer to electron beam radiation under conditions sufficient to partially cure the dielectric composition layer and wherein the exposing forms a relatively more harden ed topmost portion of the dielectric composition layer and a relatively less hardened underlying portion of the dielectric composition layer.
Claim 3
Dependent Claim
29 words
The process of claim 1 wherein the dielectric composition layer comprises a silsesquioxane polymer, a siloxane polymer, a polyimide, a polyarylene ether, a fluorinated polyarylene ether or mixtures thereof.
Claim 4
Dependent Claim
21 words
The process of claim 1 wherein the dielectric composition layer has a thickness of from about 500 to about 50,000 angstroms.
Claim 5
Dependent Claim
39 words
The process of claim 1 wherein the dielectric constant of the relatively more hardened topmost portion of the dielectric composition layer is different from the dielectric constant of the relatively less hardened underlying portion of the dielectric composition layer.
Claim 6
Dependent Claim
38 words
The process of claim 1 wherein the topmost portion of the dielectric composition layer is exposed to the electron beam radiation and the underlying portion of the dielectric composition layer is not exposed to the electron beam radiation.
Claim 7
Dependent Claim
40 words
The process of claim 1 wherein the dielectric composition layer has a thickness of from about 500 to about 50,000 angstroms and topmost portion of the dielectric composition layer has a thickness of from about 200 to about 10,000 angstroms.
Claim 8
Dependent Claim
12 words
The process of claim 1 wherein the substrate comprises a semiconductor material.
Claim 9
Dependent Claim
112 words
The process of claim 1 wherein the dielectric composition layer comprises at least one polymer having a formula selected from the group consisting of [(HSiO 1 .5) x O y ] n , (HSiO 1 .5) n , [(HSiO 1 .5) x O y (RSiO 1 .5) z ] n , [(HSiO 1 .5) x (RSiO 1 .5) y ] n and [(HSiO 1 .5) x O y (RSiO 1 .5) z ] n wherein x=about 6 to about 20, y=1 to about 3, z=about 6 to about 20, n=1 to about 4,000, and each R is independently H, C 1 to C 8 alkyl or C 6 to C 12 aryl.
Claim 10
Dependent Claim
16 words
The process of claim 1 wherein the dielectric composition layer comprises hydrogen silsesquioxane or methyl silsesquioxane.
Claim 11
Dependent Claim
40 words
The process of claim 1 further comprising the step of heating the dielectric composition layer under conditions sufficient to form an at least partially solidified dielectric composition layer on the substrate either prior to or during the electron beam exposing.
Claim 12
Dependent Claim
30 words
The process of claim 10 wherein the heating is conducted at a temperature of from about 25° C. to about 500° C. for from about 1 to about 360 minutes.
Claim 13
Dependent Claim
110 words
The process of claim 10 further comprising the steps, before electron beam exposing, of applying a layer of a photoresist onto the at least partially solidified dielectric composition layer on the substrate, imagewise exposing and developing the photoresist layer to thereby remove a portion of the photoresist layer from the dielectric composition layer and leaving a portion of the photoresist remaining on the dielectric composition layer; wherein the part of the dielectric composition layer underlying the portion of the photoresist remaining on the dielectric composition layer is exposed to less electron beam radiation than the part of the dielectric composition layer corresponding to the removed portion of the photoresist layer.
Claim 14
Dependent Claim
18 words
The process of claim 10 wherein the electron beam exposing forms a substantially uniformly hardened dielectric composition layer.
Claim 15
Dependent Claim
23 words
The process of claim 12 further comprising the subsequent step of removing the portion of the photoresist remaining on the dielectric composition layer.
Claim 16
Dependent Claim
34 words
The process of claim 12 further comprising the subsequent step of forming a via through the part of the dielectric composition layer corresponding to the removed portion of the photoresist layer to the substrate.
Claim 17
Dependent Claim
19 words
The process of claim 15 wherein the portion of the substrate underlying the via comprises an electrically conductive material.
Claim 18
Dependent Claim
34 words
The process of claim 1 wherein the electron beam exposing is conducted while in the presence of a gas selected from the group consisting of hydrogen, helium, oxygen, argon, nitrogen, xenon and mixtures thereof.
Claim 19
Dependent Claim
24 words
The process of claim 1 wherein the electron beam exposing is conducted at a temperature of from about 25° C. to about 500° C.
Claim 20
Dependent Claim
25 words
The process of claim 1 wherein the exposed dielectric composition layer has a dielectric constant in the range of from about 2.6 to about 4.0.
Claim 21
Dependent Claim
25 words
The process of claim 1 wherein the dielectric composition layer has a density of from about 1 g/cm 3 to about 3 g/cm 3 .
Claim 22
Dependent Claim
25 words
The process of claim 1 wherein the electron beam exposing is conducted at an energy level of from about 0.5 KeV to about 20 KeV.
Claim 23
Dependent Claim
28 words
The process of claim 1 wherein the electron beam exposing is conducted at an electron dose of from about 500 μC/cm 2 to about 20,000 μC/cm 2 .
Claim 24
Dependent Claim
30 words
The process of claim 1 further comprising the step of heating the dielectric composition layer under conditions sufficient to remove electron beam exposure induced by-products after the electron beam exposure.
Claim 25
Dependent Claim
30 words
The process of claim 23 wherein the heating is conducted at a temperature of from about 50° C. to about 500° C. for from about 1 to about 360 minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-27 | 2003-12-27 | 2004-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-27 | 2007-12-27 | 2008-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-27 | 2011-12-27 | 2012-06-27 | $7700.00 | Window Closed / Lapsed |