US6072689A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ferroelectric capacitor and integrated circuit device comprising same
Assignee: Hanger Solutions LLC
•
Filing: 1999-02-23
•
Granted: 2000-06-06
•
Expires: 2019-02-23
Abstract
Abstract An integrated circuit capacitor in which a first conductive plate, a layer of ferroelectric material, and a second conductive plate are deposited and formed in sequence. Thereafter a diffusion barrier material and an insulative material are deposited either as a layered dielectric stack with alternating layers of the diffusion barrier material and the insulative material with tensile and compressive stresses in the alternating layers offsetting one another, or as a graded diffusion barrier material varying from a binary oxide of Ta, Nb, or Zr at the surface of the ferroelectric material to SiO 2 at a distance above the surface of the ferroelectric material.
Inventors
- 👤 Peter S. Kirlin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:33
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
57 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; and a graded diffusion barrier material deposited over the second capacitor plate and an exposed part of the ferroelectric material.
Claim 2
Dependent Claim
57 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; and a graded diffusion barrier material deposited over the second capacitor plate and an exposed part of the ferroelectric material.
Claim 3
Dependent Claim
28 words
The device of claim 1 wherein: the ferroelectric material comprises a material selected from the group consisting of PbZrTiO 3 and SrBi 2 Ta 2 O 9 .
Claim 4
Dependent Claim
75 words
The device of claim 1 wherein: the diffusion barrier layer material comprises a material selected from the group consisting of TiO 2 , ZrO 2 , Ta 2 O 5 , Nb 2 O 5 , Zr 1-x Ti x O 2 , where x is a number in a range from zero to one, and Ta 5-y Si y O 10 , where y is a number in a range from zero to five.
Claim 5
Dependent Claim
14 words
The device of claim 1 wherein: the insulative layer material comprises SiO 2 .
Claim 6
Dependent Claim
57 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein: the insulative layer material comprises a material selected from the group consisting of Si 3 N 4 , spin-on-glass, SiF z O 4-z , and organic dielectric materials, where z is a number in a range from zero to four.
Claim 7
Dependent Claim
47 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein: the diffusion barrier material comprises a material selected from the group consisting of TiO 2 , ZrO 2 , Ta 2 O 5 , and Nb 2 O 5 .
Claim 8
Dependent Claim
13 words
The device of claim 1 wherein the ferroelectric material comprises lead zirconium titanate.
Claim 9
Dependent Claim
13 words
The device of claim 1 wherein the ferroelectric material comprises strontium bismuth tantalate.
Claim 10
Dependent Claim
13 words
The device of claim 1 wherein the diffusion barrier material comprises titanium oxide.
Claim 11
Dependent Claim
13 words
The device of claim 1 wherein the diffusion barrier material comprises zirconium oxide.
Claim 12
Dependent Claim
13 words
The device of claim 1 wherein the diffusion barrier material comprises tantalum oxide.
Claim 13
Dependent Claim
13 words
The device of claim 1 wherein the diffusion barrier material comprises niobium oxide.
Claim 14
Dependent Claim
23 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein the insulative material comprises silicon nitride.
Claim 15
Dependent Claim
22 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein the insulative material comprises spin-on-glass.
Claim 16
Dependent Claim
23 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein the insulative material comprises silicon fluoride.
Claim 17
Dependent Claim
25 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein the insulative material comprises an organic dielectric material.
Claim 18
Dependent Claim
22 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein the insulative material comprises polyimide.
Claim 19
Dependent Claim
25 words
The device of claim 1 wherein the first capacitor plate is formed of a metal selected from the group consisting of aluminum, copper and tungsten.
Claim 20
Dependent Claim
17 words
The device of claim 1 wherein the first capacitor plate is formed of a material comprising aluminum.
Claim 21
Dependent Claim
17 words
The device of claim 1 wherein the first capacitor plate is formed of a material comprising copper.
Claim 22
Dependent Claim
17 words
The device of claim 1 wherein the first capacitor plate is formed of a material comprising tungsten.
Claim 23
Dependent Claim
84 words
The device of claim 1, further comprising an insulative material deposited over the diffusion barrier material, wherein the ferroelectric material comprises an oxide material selected from the group consisting of lead zirconium titanate and strontium bismuth tantalate, wherein the oxygen diffusion barrier layer comprises an oxide selected from the group consisting of titanium oxide, zirconium oxide, tantalum oxide and niobium oxide, and wherein the insulative material comprises a material selected from the group consisting of silicon dioxide, silicon nitride, spin-on-glass, silicon fluoride and polyimide.
Claim 24
Dependent Claim
77 words
A capacitor, comprising: a first conductive plate; a layer of ferroelectric material on the first conductive plate; a second conductive plate on the layer of ferroelectric material; a diffusion barrier material over the second conductive plate and a part of the ferroelectric material, wherein the diffusion barrier material has residual internal tensile stress in its structure; and an insulative material over the diffusion barrier material, wherein the insulative material has residual internal compressive stress in its structure.
Claim 25
Dependent Claim
77 words
A capacitor, comprising: a first conductive plate; a layer of ferroelectric material on the first conductive plate; a second conductive plate on the layer of ferroelectric material; a diffusion barrier material over the second conductive plate and a part of the ferroelectric material, wherein the diffusion barrier material has residual internal tensile stress in its structure; and an insulative material over the diffusion barrier material, wherein the insulative material has residual internal compressive stress in its structure.
Claim 26
Dependent Claim
27 words
The capacitor of claim 23 wherein: the residual tensile stress in the diffusion barrier material and the residual compressive stress in the insulative material cancel one another.
Claim 27
Dependent Claim
93 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; an oxygen diffusion barrier layer material deposited over the second capacitor plate and an exposed part of the ferroelectric material; and a layer of insulative material deposited over the diffusion barrier layer; wherein the oxygen diffusion barrier layer material is graded and/or comprises a material selected from the group consisting of tantalum oxide and niobium oxide.
Claim 28
Dependent Claim
93 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; an oxygen diffusion barrier layer material deposited over the second capacitor plate and an exposed part of the ferroelectric material; and a layer of insulative material deposited over the diffusion barrier layer; wherein the oxygen diffusion barrier layer material is graded and/or comprises a material selected from the group consisting of tantalum oxide and niobium oxide.
Claim 29
Dependent Claim
85 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; and a layered dielectric stack comprising diffusion barrier material layers and insulative material layers in alternating sequence with one another, including at least two diffusion barrier layers and at least two insulative material layers, deposited over the second capacitor plate and an exposed part of the ferroelectric material.
Claim 30
Dependent Claim
85 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; and a layered dielectric stack comprising diffusion barrier material layers and insulative material layers in alternating sequence with one another, including at least two diffusion barrier layers and at least two insulative material layers, deposited over the second capacitor plate and an exposed part of the ferroelectric material.
Claim 31
Dependent Claim
83 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; an oxygen diffusion barrier layer material, comprising a material selected from the group consisting of tantalum oxide and niobium oxide, deposited over the second capacitor plate and an exposed part of the ferroelectric material; and a layer of insulative material deposited over the diffusion barrier layer.
Claim 32
Dependent Claim
83 words
An integrated circuit device comprising: a substrate; a first capacitor plate formed on the substrate; a layer of ferroelectric material formed on the first capacitor plate; a second capacitor plate formed over part of the ferroelectric material; an oxygen diffusion barrier layer material, comprising a material selected from the group consisting of tantalum oxide and niobium oxide, deposited over the second capacitor plate and an exposed part of the ferroelectric material; and a layer of insulative material deposited over the diffusion barrier layer.
Claim 33
Dependent Claim
53 words
An integrated circuit device comprising a ferroelectric capacitor on a substrate, wherein the capacitor is isolated from material detrimental to electrical characteristics of the capacitor, by an oxygen diffusion barrier layer material selected from tantalum oxide, niobium oxide, and graded materials deposited over the capacitor and directly on the substrate surrounding the capacitor.
Claim 34
Dependent Claim
53 words
An integrated circuit device comprising a ferroelectric capacitor on a substrate, wherein the capacitor is isolated from material detrimental to electrical characteristics of the capacitor, by an oxygen diffusion barrier layer material selected from tantalum oxide, niobium oxide, and graded materials deposited over the capacitor and directly on the substrate surrounding the capacitor.
References Cited (Backward Citations)
US476274A
Cited
US2490547A
Cited
US2622184A
Cited
US2801322A
Cited
US2925329A
Cited
US3190262A
Cited
US3404873A
Cited
US3520416A
Cited
US3549412A
Cited
US3659402A
Cited
US3823926A
Cited
US3969449A
Cited
US4036915A
Cited
US4080926A
Cited
US4529427A
Cited
US4288396A
Cited
US4799093A
Cited
EP0058571A1
Cited
JPS58125633A
Cited
US4833976A
Cited
US4842893A
Cited
US5097800A
Cited
US4954371A
Cited
US4847469A
Cited
US5034372A
Cited
US5110622A
Cited
JPH01305813A
Cited
US5248787A
Cited
EP0405634A2
Cited
US5005102A
Cited
US5139999A
Cited
US5120703A
Cited
US5204314A
Cited
US5536323A
Cited
US5225561A
Cited
US5280012A
Cited
US5711816A
Cited
US5165960A
Cited
WO1993004072A1
Cited
US5259995A
Cited
US5212620A
Cited
US5350705A
Cited
US5376409B1
Cited
US5376409A
Cited
US5780351A
Cited
US5416042A
Cited
US5519566A
Cited
US5554564A
Cited
US5576928A
Cited
US5696018A
Cited
US5753975A
Cited
US5563762A
Cited
US5892254A
Cited
US5923970A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-06 | 2003-12-06 | 2004-06-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-06 | 2007-12-06 | 2008-06-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-06 | 2011-12-06 | 2012-06-06 | $7700.00 | Window Closed / Lapsed |