Patent US6013575A successfully refreshed from Google Patents.
US6013575A
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Method of selectively depositing a metal film
Assignee: Toshiba Corp
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Filing: 1996-07-03
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Granted: 2000-01-11
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Expires: 2016-07-03
Abstract
Abstract The present invention provides a method of selectively depositing a metal film in an opening of an insulating layer formed on a semiconductor substrate, the opening exposing a surface of at least one of a metal layer, a semiconductor layer, and a semiconductor substrate, the method including the steps of exposing a surface of insulating layer and the substrate surface to a gas plasma which consists of at least one of an inert gas and hydrogen, exposing the insulating layer to a gas containing halogen atoms other than fluorine atoms, and selectively depositing a metal film in the opening of the insulating layer.
Inventors
- 👤 Hitoshi Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
103 words
A method of selectively depositing a metal film in an opening of an insulating layer formed on a semiconductor substrate, the opening exposing a surface of at least one of a metal layer, a semiconductor layer, and the semiconductor substrate, the method sequentially comprising the steps of: first, exposing a surface of the insulating layer and the surface exposed by the opening to a gas plasma consisting of an inert gas or hydrogen; second, exposing the insulating layer to a non-plasma gas containing halogen atoms other than fluorine atoms; and third, selectively depositing a metal film in the opening of the insulating layer.
Claim 2
Independent Claim
103 words
A method of selectively depositing a metal film in an opening of an insulating layer formed on a semiconductor substrate, the opening exposing a surface of at least one of a metal layer, a semiconductor layer, and the semiconductor substrate, the method sequentially comprising the steps of: first, exposing a surface of the insulating layer and the surface exposed by the opening to a gas plasma consisting of an inert gas or hydrogen; second, exposing the insulating layer to a non-plasma gas containing halogen atoms other than fluorine atoms; and third, selectively depositing a metal film in the opening of the insulating layer.
Claim 3
Dependent Claim
37 words
The method according to claim 1, wherein said gas containing halogen atoms other than fluorine atoms is at least one selected from the group consisting of Cl 2 , BCl 3 , HCl and CCl 4 .
Claim 4
Dependent Claim
34 words
The method according to claim 1, wherein the step of exposing a semiconductor substrate in the gas plasma and in the gas containing halogen atoms except fluorine atoms are performed in a vacuum chamber.
Claim 5
Dependent Claim
25 words
The method according to claim 1, wherein said metal film is at least one selected from the group consisting of W, Ti, Mo and Cu.
Claim 6
Dependent Claim
18 words
The method according to claim 1, wherein said inert gas is at least one of Ar and He.
Claim 7
Dependent Claim
35 words
The method according to claim 1, wherein the step of exposing the semiconductor substrate in the gas containing halogen atoms other than fluorine atoms is performed at the substrate temperature -30 to 60 degrees Celsius.
Claim 8
Dependent Claim
35 words
The method according to claim 1, wherein the step of exposing the semiconductor substrate in the gas containing halogen atoms other than fluorine atoms is performed at the substrate temperature 10 to 30 degrees Celsius.
Claim 9
Dependent Claim
25 words
The method according to claim 1, wherein the step of depositing a metal film is performed at the substrate temperature 180 to 260 degrees Celsius.
Claim 10
Dependent Claim
25 words
The method according to claim 1, wherein the step of depositing a metal film is performed at the substrate temperature 200 to 220 degrees Celsius.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-01-10 | 2003-07-12 | 2004-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-01-10 | 2007-07-12 | 2008-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-01-10 | 2011-07-12 | 2012-01-11 | $7700.00 | Window Closed / Lapsed |