Metallic film forming process

Abstract

Abstract PURPOSE:To produce semiconductor element with rapid processing speed and high reliability by a method where in a semiconductor substrate is preliminarily exposed to gas plasma and a tungsten film made of high melting point metal is formed into a specific pattern. CONSTITUTION:A semiconductor substrate 15 with contact hole opened by forming an active element is arranged ina plasma producer. Then a vacuum chamber is exhausted filling it with Ar gas introduced from a gas inlet 10 to maintain the pressure in the chamber at specified value. Successively the chamber is impressed with high frequency power to produce Ar gas plasma 16 exposing the semiconductor substrate 15 to this plasma. Then the substrate 15 is WF4 gas pressure-divided by a decompression device to deposit a tungsten film 7 in a contact hole by means of depositing H2 as carrier gas at specified pressure and temperature. Through these procedures, the barrier metal of contact hole may be selectively formed only on Si of a diffusion layer 5 and polycrystalline Si of a gate 4.

Inventors

• 👤 Hiroshi Takeuchi
• 👤 寛 竹内

Bibliographic Details