Method of forming refractory metal film

Claim 1

A method of forming a tungsten film on only a portion of a semiconductor substrate, comprises the steps of: (a) forming said portion on the substrate; and (b) introducing first and second gases into a reactive vessel containing the substrate having said portion, the first gas being tungsten hexafluoride having a flow rate Q 1 of 100 cc/min or less and the second gas being at least one gas selected from monosilane, disilane, and halides thereof having a flow rate Q 2 is 200 cc/min or less, wherein, R=Q.sub.2 /Q.sub.1 ≦1.5, the total pressure of all gases P is 5 Torr or less, and a substrate temperature T is between 250° C. and 400° C.

Claim 2

A method of forming a tungsten film on only a portion of a semiconductor substrate, comprises the steps of: (a) forming said portion on the substrate; and (b) introducing first and second gases into a reactive vessel containing the substrate having said portion, the first gas being tungsten hexafluoride having a flow rate Q 1 of 100 cc/min or less and the second gas being at least one gas selected from monosilane, disilane, and halides thereof having a flow rate Q 2 is 200 cc/min or less, wherein, R=Q.sub.2 /Q.sub.1 ≦1.5, the total pressure of all gases P is 5 Torr or less, and a substrate temperature T is between 250° C. and 400° C.

Claim 5

A method for forming a tungsten film on only a portion of a semiconductor substrate, comprising the steps of: (a) forming said portion on the substrate; (b) introducing into a reactor vessel containing the substrate having said portion a tungsten hexafluoride gas at a first flow rate Q 3; (c) introducing into the reactor vessel a tungsten hexafluoride gas at a second flow rate Q 4 of 100 cc/min or less, and at least one gas selected from monosilane, disilane and halides thereof at a third flow rate Q 5 of 200 cc/min and a flow ratio R=Q 5 /Q 4 is 1.5 or less.

Claim 6

A method for forming a tungsten film on only a portion of a semiconductor substrate, comprising the steps of: (a) forming said portion on the substrate; (b) introducing into a reactor vessel containing the substrate having said portion a tungsten hexafluoride gas at a first flow rate Q 3; (c) introducing into the reactor vessel a tungsten hexafluoride gas at a second flow rate Q 4 of 100 cc/min or less, and at least one gas selected from monosilane, disilane and halides thereof at a third flow rate Q 5 of 200 cc/min and a flow ratio R=Q 5 /Q 4 is 1.5 or less.

Claim 14

A method of forming a refractory metal film comprising tungsten on only a portion of a semiconductor substrate in a reactor vessel by a reduction reaction, comprising the steps of: (a) forming said portion on the substrate; and (b) introducing into the reactor vessel an introducing quantity Q 1 of 100 cc/min or less of at least one gas that is a halide of tungsten, an introducing quantity Q 2 of 200 cc/min or less of at least one gas selected from monosilane, disilane, and halides, of monosilane and disilane, to selectively deposit tungsten on the said portion by a reduction reaction at a temperature T between 250° C. and 400° C, wherein R=Q.sub.2 /Q.sub.1 ≦3 and the total pressure P of all gases if 0.01≦P≦5 (torr).

Claim 15

A method of forming a refractory metal film comprising tungsten on only a portion of a semiconductor substrate in a reactor vessel by a reduction reaction, comprising the steps of: (a) forming said portion on the substrate; and (b) introducing into the reactor vessel an introducing quantity Q 1 of 100 cc/min or less of at least one gas that is a halide of tungsten, an introducing quantity Q 2 of 200 cc/min or less of at least one gas selected from monosilane, disilane, and halides, of monosilane and disilane, to selectively deposit tungsten on the said portion by a reduction reaction at a temperature T between 250° C. and 400° C, wherein R=Q.sub.2 /Q.sub.1 ≦3 and the total pressure P of all gases if 0.01≦P≦5 (torr).

Claim 19

A method for forming a refractory metal film on only a portion of a semiconductor substrate in a reactor vessel by a reduction reaction, comprising the steps of: (a) forming said portion on the substrate; (b) introducing into the reactor vessel at least one gas that is a halide of a refractory metal at a first introducing quantity, and hydrogen gas to selectively deposit a refractory metal on the said portion by a reduction reaction; and (c) introducing into the reactive vessel at least one gas that is a halides of a refractory metal at a second introducing quantity greater than said first introducing quantity, at least one gas selected from monosilane, disilane and halide of monosilane and disilane, to selectively deposit further refractory metal on the already deposited refractory metal by a reduction reaction, wherein the second introducing quantity Q 1 of the at least one gas that is a halide of a refractory metal is 1 to 100 cc/min, an introducing quantity Q 2 of the at least one gas selected from monosilane, disilane, and the halides of monosilane and disilane is 200 cc/min or below, and a ratio R of the quantities is expressed by R=q 2 /Q 1 <3.

Claim 20

A method for forming a refractory metal film on only a portion of a semiconductor substrate in a reactor vessel by a reduction reaction, comprising the steps of: (a) forming said portion on the substrate; (b) introducing into the reactor vessel at least one gas that is a halide of a refractory metal at a first introducing quantity, and hydrogen gas to selectively deposit a refractory metal on the said portion by a reduction reaction; and (c) introducing into the reactive vessel at least one gas that is a halides of a refractory metal at a second introducing quantity greater than said first introducing quantity, at least one gas selected from monosilane, disilane and halide of monosilane and disilane, to selectively deposit further refractory metal on the already deposited refractory metal by a reduction reaction, wherein the second introducing quantity Q 1 of the at least one gas that is a halide of a refractory metal is 1 to 100 cc/min, an introducing quantity Q 2 of the at least one gas selected from monosilane, disilane, and the halides of monosilane and disilane is 200 cc/min or below, and a ratio R of the quantities is expressed by R=q 2 /Q 1 <3.

Claim 29

A method of forming refractory metal film comprising tungsten, titanium, tantalum or molybdenum on only a portion of a semiconductor substrate in a reactor vessel by a reduction reaction, comprising the steps of: (a) forming said portion on the substrate; and (b) introducing into the reactor vessel an introducing quantity Q 1 of 0.1 to 100 cc/min of at least one gas that is a halide of a refractory metal, an introducing quantity Q 2 of 200 cc/min or less of at least one gas selected from monosilane, disilane, and halides of monosilane and disilane to selectively deposit the refractory metal comprising tungsten, titanium, tantalum or molybdenum on the said portion by a reduction reaction at a temperature T between 250° C. and 400° C., wherein R=Q.sub.2 /Q.sub.1 ≦3 and the total pressure P of all gases is 0.1≦P≦5 (torr).

Claim 30

A method of forming refractory metal film comprising tungsten, titanium, tantalum or molybdenum on only a portion of a semiconductor substrate in a reactor vessel by a reduction reaction, comprising the steps of: (a) forming said portion on the substrate; and (b) introducing into the reactor vessel an introducing quantity Q 1 of 0.1 to 100 cc/min of at least one gas that is a halide of a refractory metal, an introducing quantity Q 2 of 200 cc/min or less of at least one gas selected from monosilane, disilane, and halides of monosilane and disilane to selectively deposit the refractory metal comprising tungsten, titanium, tantalum or molybdenum on the said portion by a reduction reaction at a temperature T between 250° C. and 400° C., wherein R=Q.sub.2 /Q.sub.1 ≦3 and the total pressure P of all gases is 0.1≦P≦5 (torr).