US5620925A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device using a hagolen plasma treatment step
Assignee: Toshiba Corp
•
Filing: 1994-10-21
•
Granted: 1997-04-15
•
Expires: 2014-10-21
Abstract
Abstract A method of manufacturing a semiconductor device comprising the steps of forming an insulating layer on a first conductive layer deposited on a semiconductor substrate, treating the surface of the insulating layer and the exposed surface of the first conductive layer with a gas plasma containing halogen atoms, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber housing the sample, and applying high frequency power. The gas plasma containing halogen atoms can be formed by introducing a gas containing halogen atoms into the treatment chamber to adsorb the halogen atoms on the inner wall of the chamber, and applying high frequency power. Alternatively, the gas plasma can be formed by applying high frequency power after placing the sample and a halogen containing material inside the chamber. By treatment with the gas plasma containing halogen atoms, a second conductive layer can be deposited with good selectivity.
Inventors
- 👤 Rempei Nakata
- 👤 Hitoshi Itoh
- 👤 Takashi Endo
- 👤 Tohru Watanabe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
86 words
A method of manufacturing a semiconductor device, comprising the steps of depositing an insulating layer on a first conductive layer formed on a substrate; patterning the insulating layer; treating the surface of the insulating layer and the exposed surface of the first conductive layer with a gas plasma containing halogen atoms at a pressure of 10 -6 -10 -3 Torr, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer.
Claim 2
Independent Claim
86 words
A method of manufacturing a semiconductor device, comprising the steps of depositing an insulating layer on a first conductive layer formed on a substrate; patterning the insulating layer; treating the surface of the insulating layer and the exposed surface of the first conductive layer with a gas plasma containing halogen atoms at a pressure of 10 -6 -10 -3 Torr, and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer.
Claim 3
Dependent Claim
40 words
A method according to claim 1, wherein the material of said first conductive layer is one selected from the group consisting of aluminum, molybdenum, tungsten, copper, titanium, molybdenum silicide, tungsten silicide, titanium silicide, titanium nitride, silicon, germanium, GaAs and InP.
Claim 4
Dependent Claim
31 words
A method according to claim 1, wherein the material of said insulating layer is one selected from the group consisting of silicon dioxide, silicon nitride, and these substances doped with impurities.
Claim 5
Dependent Claim
26 words
A method according to claim 1, wherein the material of said substrate is one selected from the group consisting of silicon, germanium, GaAs, InP and sapphire.
Claim 6
Dependent Claim
41 words
A method according to claim 1, wherein the material of said second conductive layer is one selected from the group consisting of aluminum, molybdenum, copper, tungsten, titanium, molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide, titanium nitride and silicon containing impurities.
Claim 7
Dependent Claim
28 words
A method according to claim 1, wherein said gas plasma containing halogen atoms is a plasma of a mixture of a halogen source gas and an inert gas.
Claim 8
Dependent Claim
26 words
A method according to claim 6, wherein said inert gas is at least one selected from the group consisting of helium, neon, nitrogen, argon and krypton.
Claim 9
Dependent Claim
30 words
A method according to claim 6, wherein the partial pressure of halogen source gas in said gas containing halogen atoms is lower than the partial pressure of the inert gas.
Claim 10
Dependent Claim
18 words
A method according to claim 1, wherein said plasma comprises a gas containing chlorine atoms or fluorine atoms.
Claim 11
Dependent Claim
74 words
A method according to claim 9, wherein said gas is at least one selected from the group consisting of Cl 2 , AsCl 3 , AsCl 5 , BCl 3 , CCl 4 , PCl 3 , PCl 5 , SF 6 , AsF 3 , AsF 5 , PF 3 , PF 5 , CHF 3 , C 2 F 6 , C 3 F 8 , CF 4 and NF 3 .
Claim 12
Dependent Claim
22 words
A method according to claim 1, further comprising the step of treating the treated surfaces by a gas plasma containing hydrogen atoms.
Claim 13
Dependent Claim
22 words
A method according to claim 1, further comprising the step of forming a third conductive layer connected to said second conductive layer.
Claim 14
Dependent Claim
41 words
A method according to claim 12, wherein the material of said third conductive layer is one selected from the group consisting of aluminum, molybdenum, copper, tungsten, titanium, molybdenum silicide, tungsten silicide, titanium silicide, tantalum silicide, titanium nitride and silicon containing impurities.
Claim 15
Independent Claim
110 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a first conductive layer deposited on a substrate; patterning the insulating layer; treating the surface of the insulating layer and the exposed surface of the first conductive layer by a gas plasma containing halogen atoms at a pressure of 10 -6 -10 -3 Torr; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer, said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 16
Independent Claim
110 words
A method of manufacturing a semiconductor device comprising the steps of: forming an insulating layer on a first conductive layer deposited on a substrate; patterning the insulating layer; treating the surface of the insulating layer and the exposed surface of the first conductive layer by a gas plasma containing halogen atoms at a pressure of 10 -6 -10 -3 Torr; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer, said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 17
Dependent Claim
33 words
A method according to claim 14, wherein said halogen source is provided by introducing a halogen source gas into the treatment chamber, and adsorbing the gas on the inner wall of the chamber.
Claim 18
Dependent Claim
22 words
A method according to claim 14, wherein said halogen source is provided by installing a halogen containing material in the treatment chamber.
Claim 19
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the step of: forming an insulating layer on a first conductive layer deposited on a substrate; patterning the insulating layer; treating the surface of the insulating layer and the exposed surface of the first conductive layer by a gas plasma containing halogen atoms at a pressure of 10 -6 -10 -3 Torr; treating the treated surfaces by a gas plasma containing hydrogen atoms; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer, said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 20
Independent Claim
121 words
A method of manufacturing a semiconductor device comprising the step of: forming an insulating layer on a first conductive layer deposited on a substrate; patterning the insulating layer; treating the surface of the insulating layer and the exposed surface of the first conductive layer by a gas plasma containing halogen atoms at a pressure of 10 -6 -10 -3 Torr; treating the treated surfaces by a gas plasma containing hydrogen atoms; and depositing selectively a conductive material by vapor growth on the exposed surface of the first conductive layer so as to form a second conductive layer, said gas plasma containing halogen atoms being formed by providing a halogen source in a treatment chamber, and passing a discharge through the chamber.
Claim 21
Dependent Claim
33 words
A method according to claim 17, further comprising also the step of treating the surface by an inert gas plasma prior to the step of treating by the gas plasma containing halogen atoms.
References Cited (Backward Citations)
US4532702A
Cited
US4670967A
Cited
EP0157052A1
Cited
US4595601A
Cited
US4595608A
Cited
JPS61248525A
Cited
US4617087A
Cited
US4904621A
Cited
US4902645A
Cited
US4777061A
Cited
US5043299A
Cited
US5043299B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-14 | 2000-10-14 | 2001-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-14 | 2004-10-14 | 2005-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-14 | 2008-10-14 | 2009-04-15 | $7700.00 | Window Closed / Lapsed |