US5654237A
Expired / Lapsed
US
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Method of manufacturing semiconductor device
Assignee: Toshiba Corp
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Filing: 1995-06-07
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Granted: 1997-08-05
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Expires: 2015-06-07
Abstract
Abstract A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.
Inventors
- 👤 Kyoichi Suguro
- 👤 Haruo Okano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6316; H10P14/6319; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6532; H10P14/66; H10P14/662; H10P14/668; H10P14/6681; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; H10P14/692; H10P14/6921; H10P14/69215; Y; Y10; Y10S; Y10S148/00; Y10S148/117
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
68 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating layer having an opening in which a first conductive layer is formed; selectively forming a second insulating layer on said first insulating layer; patterning said second insulating layer; and forming an interconnection layer in an opening portion of said second insulating layer so as to be electrically connected to said first conductive layer.
Claim 2
Independent Claim
68 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating layer having an opening in which a first conductive layer is formed; selectively forming a second insulating layer on said first insulating layer; patterning said second insulating layer; and forming an interconnection layer in an opening portion of said second insulating layer so as to be electrically connected to said first conductive layer.
Claim 3
Dependent Claim
20 words
A method according to claim 1, wherein formation of said second insulating layer is performed by selective chemical vapor deposition.
Claim 4
Dependent Claim
21 words
A method according to claim 1, wherein formation of said second insulating layer is performed by directional selective chemical vapor deposition.
Claim 5
Dependent Claim
21 words
A method according to claim 3, wherein said directional selective chemical vapor deposition uses a polar compound as a feed gas.
Claim 6
Dependent Claim
37 words
A method according to claim 4, wherein said polar compound gas is a silicon compound gas selected from the group consisting of SiH 3 Cl, SiCl 2 , SiCl 3 , and Si(CH 3 ) 3 .
Claim 7
Dependent Claim
18 words
A method according to claim 1, wherein said first and second insulating layers consist of SiO 2 .
Claim 8
Dependent Claim
36 words
A method according to claim 1, further comprising, before said step of forming said second insulating layer, the step of processing surfaces of said first insulating layer and said conductive layer by an H 2 plasma.
Claim 9
Dependent Claim
86 words
A method according to claim 1, further comprising the steps of: making insulative a surface of the part of said interconnection layer except for a portion on which a second conductive layer is to be formed; selectively forming a third insulating layer on said second insulating layer and the surface of said interconnection layer which is made insulative; and forming a second conductive layer on the portion of said interconnection layer which is not made insulative so as to be electrically connected to said interconnection layer.
Claim 10
Independent Claim
106 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating layer having an opening in which a first conductive layer is formed; making insulative a surface of the part of said first conductive layer except for the portion on which a second conductive layer is to be formed; selectively forming a second insulating layer on said first insulating layer and the surface of said first conductive layer which is made insulative; and forming a second conductive layer on the portion to said first conductive layer which is not made insulative so as to be electrically connected to said first conductive layer.
Claim 11
Independent Claim
106 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a first insulating layer having an opening in which a first conductive layer is formed; making insulative a surface of the part of said first conductive layer except for the portion on which a second conductive layer is to be formed; selectively forming a second insulating layer on said first insulating layer and the surface of said first conductive layer which is made insulative; and forming a second conductive layer on the portion to said first conductive layer which is not made insulative so as to be electrically connected to said first conductive layer.
Claim 12
Dependent Claim
44 words
A method according to claim 9, wherein said step of making insulative the surface of the part of said first conductive layer is performed by radiating and scanning an ion beam of oxygen on the surface of the part of said first conductive layer.
Claim 13
Dependent Claim
39 words
A method according to claim 9, wherein said step of making insulative the surface of the part of said first conductive layer is performed by implanting oxygen or nitrogen ions in said first conductive layer through a masking layer.
Claim 14
Dependent Claim
38 words
A method according to claim 9, wherein said step of making insulative the surface of the part of said first conductive layer is performed by thermally oxidizing the surface of said first conductive layer through an antioxidation mask.
Claim 15
Dependent Claim
20 words
A method according to claim 9 wherein formation of said second insulating layer is performed by selective chemical vapor deposition.
Claim 16
Dependent Claim
21 words
A method according to claim 9, wherein formation of said second insulating layer is performed by directional selective chemical vapor deposition.
Claim 17
Dependent Claim
22 words
A method according to claim 14, wherein said directional selective chemical vapor deposition uses a polar compound gas as a feed gas.
Claim 18
Dependent Claim
37 words
A method according to claim 15, wherein said polar compound gas is a silicon compound gas selected from the group consisting of SiH 3 Cl, SiCl 2 , SiCl 3 , and Si(CH 3 ) 3 .
Claim 19
Dependent Claim
18 words
A method according to claim 9, wherein said first and second insulating layers consist of SiO 2 .
Claim 20
Dependent Claim
37 words
A method according to claim 9, further comprising, before said step of forming said second insulating layer, a step of processing surfaces of said first insulating layer and said first conductive layer by an H 2 plasma.
Claim 21
Dependent Claim
22 words
A method according to claim 9, wherein said step of forming said first conductive layer is performed by selective chemical vapor deposition.
Claim 22
Dependent Claim
32 words
A method according to claim 9, wherein said step of forming said first conductive layer includes the substeps of performing directional chemical vapor deposition on the entire surface and performing mirror polishing.
Claim 23
Dependent Claim
22 words
A method according to claim 20, wherein said directional chemical vapor deposition is performed while a bias is applied on said substrate.
Claim 24
Dependent Claim
43 words
A method according to claim 9, wherein said step of forming said first conductive layer includes the substeps of performing directional chemical vapor deposition on the entire surface, depositing a planarizing material on the entire surface to planarize the surface, and performing etching-hack.
Claim 25
Dependent Claim
59 words
A method according to claim 20, wherein said step of forming said first conductive layer includes the substeps of forming a spacing layer on said first insulating layer, performing directional chemical vapor deposition on the entire surface to form a conductive layer, and removing said spacing layer to lift-off a portion of said conductive layer on said spacing layer.
Claim 26
Dependent Claim
34 words
A method according to claim 9, wherein said first conductive layer has an alignment mark and the portion of said first insulating layer around said alignment mark is removed to project said alignment mark.
Claim 27
Dependent Claim
53 words
A method according to claim 9, further comprising the steps of: selectively forming a third insulating layer on said second conductive layer; patterning said third insulating layer; and forming a third conductive layer in an opening portion of said third insulating layer so as to be electrically connected to said second conductive layer.
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