Growing method for cvd film

Abstract

Abstract PURPOSE:To eliminate a mound, to reduce gas consumption amount, to apply to a board having low heat resistant temperature, to obviate selective etching and to decrease number of steps by selectively radiating the surface of a substrate at ambient temperature exposed with reaction gas with a pulselike converged laser light. CONSTITUTION:The surface of a substrate at ambient temperature exposed with reaction gas is selectively radiated with a pulselike converged laser light by using a laser light having a wavelength for not directly inducing photochemical reaction of reaction gas to selectively grow a CVD film. For example, when the surface of the substrate 1 is scanned to be selectively radiated with a Kr gas laser having 350nm of wavelength and 0.5W of output at a speed of 2mum/min in a state that reaction gas of SiH4 and O2 is in contact with the surface of a GaAs substrate 1 at ambient temperature, a CVD film 4 of SiO2 is selectively grown on the upper face of a locally heated region 5 of 420 deg.C of the substrate 1. The resolution of the CVD film pattern to be formed is controlled by the temperature distribution of the surface of the substrate raised at its temperature by the radiation of the laser light.

Inventors

• 👤 Tsutomu Tsuji
• 👤 辻　力
• 👤 Shunji Nakao
• 👤 中尾　俊二

Bibliographic Details