US5112439A
Expired / Lapsed
US
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Method for selectively depositing material on substrates
Assignee: Nortel Networks Ltd
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Filing: 1990-11-14
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Granted: 1992-05-12
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Expires: 2010-11-14
Abstract
Abstract An alternating cyclic (A.C.) method for selectively depositing materials, on the surface of a substrate without depositing the material on an adjacent mask layer. A gas of a reducible compound of the material and a reducing gas, preferably hydrogen, are simultaneously flowed through a reaction chamber to deposit the material on the substrate surface and to a lesser extent on the mask layer. Then, the flow of reducing gas is interrupted to cause the reducible compound gas to etch the material which forms on the mask layer in a disproportionation reaction. The deposition and etch steps are repeated in an alternating cyclic fashion until the requisite thickness is deposited. The process may take place in a single reaction chamber, using only the reducible compound gas and pulsed flow of the reducing gas.
Inventors
- 👤 Arnold Reisman
- 👤 Gary W. Jones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 02:17
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; C; C23; C23C; C23C16/00; C23C16/04; C23C16/06; C23C16/08; C23C16/14; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P14/24; H10P14/27; H10P14/271; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/3404; H10P14/3411; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10P50/244; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; Y; Y10; Y10S; Y10S438/00; Y10S438/913
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
171 words
A method of selectively depositing a predetermined thickness of a material on the surface of a substrate having a mask layer thereon and located in a reaction chamber, comprising the steps of: heating said reaction chamber; reducing a gas of a reducible compound of said material to deposit said material on said surface and which results in formation of nuclei of said material on said mask layer, by flowing a gas of a reducible compound of said material and a reducing gas through said heated reaction chamber; effecting a disproportionation reaction, by interrupting the flow of the reducing gas while continuing the flow of the reducible compound gas in the heated reaction chamber in the absence of laser excitation and in the absence of plasma excitation, to etch the nuclei of said material which form on said mask layer, and to a lesser extent etch the material on said surface; and repeating said reducing and disproportionation nuclei etching steps of selectively deposit said predetermined thickness of said material on said surface.
Claim 2
Independent Claim
171 words
A method of selectively depositing a predetermined thickness of a material on the surface of a substrate having a mask layer thereon and located in a reaction chamber, comprising the steps of: heating said reaction chamber; reducing a gas of a reducible compound of said material to deposit said material on said surface and which results in formation of nuclei of said material on said mask layer, by flowing a gas of a reducible compound of said material and a reducing gas through said heated reaction chamber; effecting a disproportionation reaction, by interrupting the flow of the reducing gas while continuing the flow of the reducible compound gas in the heated reaction chamber in the absence of laser excitation and in the absence of plasma excitation, to etch the nuclei of said material which form on said mask layer, and to a lesser extent etch the material on said surface; and repeating said reducing and disproportionation nuclei etching steps of selectively deposit said predetermined thickness of said material on said surface.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said material comprises a compound semiconductor material.
Claim 4
Dependent Claim
12 words
The method of claim 1 wherein said material comprises a refractory metal.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein said material comprises a non-refractory metal.
Claim 6
Dependent Claim
11 words
The method of claim 1 wherein said reducing gas comprises hydrogen.
Claim 7
Dependent Claim
11 words
The method of claim 3 wherein said refractory metal comprises tungsten.
Claim 8
Dependent Claim
26 words
The method of claim 1 wherein said reducing step is practiced for about 30 seconds and said nuclei etching step is practiced for about 15 seconds.
Claim 9
Dependent Claim
21 words
The method of claim 1 wherein the time ratio of said reducing step and said nuclei etching step is about 2:1.
Claim 10
Dependent Claim
18 words
The method of claim 1 wherein said reducing and etching steps are performed in an argon ambient atmosphere.
Claim 11
Dependent Claim
35 words
The method of claim 1 wherein said substrate is a semiconductor substrate, wherein said gas of a reducible compound of said material is a refractory metal halide gas, and when said reducing gas is hydrogen.
Claim 12
Dependent Claim
19 words
The method of claim 10 wherein said substrate is silicon and said refractory metal halide gas is tungsten hexafluoride.
Claim 13
Dependent Claim
26 words
The method of claim 1 wherein said reducing step is practiced for about 30 seconds and said nuclei etching step is practiced for about 10 seconds.
Claim 14
Dependent Claim
21 words
The method of claim 1 wherein the time ratio of said reducing step and said nuclei etching step is about 3:1.
Claim 15
Dependent Claim
56 words
The method of claim 1 wherein said reducing step is performed by flowing the reducible compound gas through said heated reaction chamber at a predetermined flow rate, and wherein said etching step is performed by interrupting the flow of the reducing gas while continuing the flow of the reducible compound gas at the predetermined flow rate.
Claim 16
Independent Claim
165 words
A method of selectively depositing a predetermined thickness of a material on the surface of a substrate having a mask layer thereon and located in a reaction chamber, comprising the steps of: heating said reaction chamber; reducing a gas of a reducible compound of said material to deposit said material on said surface and which results in formation of nuclei of said material on said mask layer, by exposing said substrate to a gas of a reducible compound of said material and a reducing gas in said heated reaction chamber; effecting a disproportionation reaction, by exposing said substrate to the reducible compound gas, without the reducing gas, in the absence of laser excitation and in the absence of plasma excitation, to etch the nuclei of said material which form on said mask layer, and to a lesser extent etching the material on said surface; and repeating said reducing and disproportionation nuclei etching steps of selectively deposit said predetermined thickness of said material on said surface.
Claim 17
Independent Claim
165 words
A method of selectively depositing a predetermined thickness of a material on the surface of a substrate having a mask layer thereon and located in a reaction chamber, comprising the steps of: heating said reaction chamber; reducing a gas of a reducible compound of said material to deposit said material on said surface and which results in formation of nuclei of said material on said mask layer, by exposing said substrate to a gas of a reducible compound of said material and a reducing gas in said heated reaction chamber; effecting a disproportionation reaction, by exposing said substrate to the reducible compound gas, without the reducing gas, in the absence of laser excitation and in the absence of plasma excitation, to etch the nuclei of said material which form on said mask layer, and to a lesser extent etching the material on said surface; and repeating said reducing and disproportionation nuclei etching steps of selectively deposit said predetermined thickness of said material on said surface.
Claim 18
Dependent Claim
13 words
The method of claim 15 wherein said material comprises a compound semiconductor material.
Claim 19
Dependent Claim
12 words
The method of claim 15 wherein said material comprises a refractory metal.
Claim 20
Dependent Claim
12 words
The method of claim 15 wherein said material comprises a non-refractory metal.
Claim 21
Dependent Claim
11 words
The method of claim 15 wherein said reducing gas comprises hydrogen.
Claim 22
Dependent Claim
11 words
The method of claim 17 wherein said refractory metal comprises tungsten.
Claim 23
Dependent Claim
26 words
The method of claim 15 wherein said reducing step is practiced for about 30 seconds and said nuclei etching step is practiced for about 15 seconds.
Claim 24
Dependent Claim
21 words
The method of claim 15 wherein the time ratio of said reducing step and said nuclei etching step is about 2:1.
Claim 25
Dependent Claim
18 words
The method of claim 15 wherein said reducing and etching steps are performed in an argon ambient atmosphere.
Claim 26
Dependent Claim
35 words
The method of claim 15 wherein said substrate is a semiconductor substrate, wherein said gas of a reducible compound of said material is a refractory metal halide gas, and when said reducing gas is hydrogen.
Claim 27
Dependent Claim
19 words
The method of claim 24 wherein said substrate is silicon and said refractory metal halide gas is tungsten hexafluoride.
Claim 28
Dependent Claim
26 words
The method of claim 15 wherein said reducing step is practiced for about 30 seconds and said nuclei etching step is practiced for about 10 seconds
Claim 29
Dependent Claim
21 words
The method of claim 15 wherein the time ratio of said reducing step and said nuclei etching step is about 3:1.
Claim 30
Dependent Claim
48 words
The method of claim 15 wherein said reducing step is performed by exposing the substrate to the reducible compound gas at a predetermined concentration, and wherein said etching step is performed by exposing the substrate to the reducible compound gas at the predetermined concentration, without the reducing gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-12 | 1995-11-11 | 1996-05-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-12 | 1999-11-11 | 2000-05-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-12 | 2003-11-11 | 2004-05-12 | $7700.00 | Window Closed / Lapsed |