Method of depositing uniformly thick selective epitaxial silicon
Abstract
Abstract A method for depositing monocrystalline silicon at a uniform rate onto a plurality of unequally sized monocrystalline nucleation sites comprises initially providing a substrate having an apertured oxide mask on a major surface thereof. The oxide mask includes a plurality of apertures each of which exposes a nucleation site on the substrate surface. The substrate is then exposed to a mixture of dichlorosilane and hydrogen chloride at 850° C. and a pressure less than approximately 50 torr, for a predetermined time. This yields a monocrystalline silicon island extending from each nucleation site. Each of the islands has a substantially flat profile across the major surface thereof and all islands are equal in thickness.
Inventors
- 👤 John F. Corboy, Jr.
- 👤 Robert H. Pagliaro, Jr.
- 👤 Lubomir L. Jastrzebski
- 👤 Ramazan Soydan
Bibliographic Details
Claims Analysis
Total Claims: 6References Cited (Backward Citations)
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