Patent US5843830A successfully refreshed from Google Patents.
US5843830A
Expired / Lapsed
US
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Capacitor, and methods for forming a capacitor
Assignee: Micron Technology Inc
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Filing: 1996-06-26
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Granted: 1998-12-01
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Expires: 2016-06-26
Abstract
Abstract A method for forming a capacitor includes forming a substrate having a node location to which electrical connection to a capacitor is to be made; forming an inner capacitor plate over the node location, the inner capacitor plate having an exposed sidewall; forming an oxidation barrier layer over the exposed inner capacitor plate sidewall; forming a capacitor dielectric plate over the inner capacitor plate, the oxidation barrier layer restricting oxidation of the inner capacitor plate sidewall during formation of the capacitor dielectric plate; and forming an outer capacitor plate over the capacitor dielectric plate. A capacitor is further described which includes an inner capacitor plate having at least one sidewall; an oxidation barrier layer positioned in covering relation relative to the at least one sidewall; a capacitor dielectric plate positioned over the inner capacitor plate; and an outer capacitor plate positioned over the capacitor dielectric plate. In the preferred form of the invention, an insulating dielectric layer is positioned on the oxidation barrier layer, the insulating dielectric layer being of a different composition than the oxidation barrier layer.
Inventors
- 👤 Thomas M. Graettinger
- 👤 Paul J. Schuele
- 👤 Brent McClure
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:04
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10P; H10P14/00; H10P14/40
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
140 words
A method for forming a capacitor, comprising: providing a substrate having a node location to which electrical connection to a capacitor is to be made; forming an inner capacitor plate over the node location, the inner capacitor plate having an exposed sidewall; forming an oxidation barrier layer atop the inner capacitor plate, and over the inner capacitor plate sidewall, and wherein an oxide layer is formed over the oxidation barrier layer; after formation of the oxidation barrier layer, selectively planarizing the oxide layer relative to the oxidation barrier layer overlying the inner capacitor plate; after selectively planarizing the oxide layer, forming a capacitor dielectric plate over the inner capacitor plate, the oxidation barrier layer restricting oxidation of the inner capacitor plate sidewall during provision of the capacitor dielectric plate; and forming an outer capacitor plate over the capacitor dielectric plate.
Claim 2
Independent Claim
140 words
A method for forming a capacitor, comprising: providing a substrate having a node location to which electrical connection to a capacitor is to be made; forming an inner capacitor plate over the node location, the inner capacitor plate having an exposed sidewall; forming an oxidation barrier layer atop the inner capacitor plate, and over the inner capacitor plate sidewall, and wherein an oxide layer is formed over the oxidation barrier layer; after formation of the oxidation barrier layer, selectively planarizing the oxide layer relative to the oxidation barrier layer overlying the inner capacitor plate; after selectively planarizing the oxide layer, forming a capacitor dielectric plate over the inner capacitor plate, the oxidation barrier layer restricting oxidation of the inner capacitor plate sidewall during provision of the capacitor dielectric plate; and forming an outer capacitor plate over the capacitor dielectric plate.
Claim 3
Dependent Claim
41 words
A method for forming a capacitor as claimed in claim 1, wherein after the step of planarizing, and before forming the capacitor dielectric plate, removing the oxidation barrier layer from atop the inner capacitor plate to expose the inner capacitor plate.
Claim 4
Independent Claim
134 words
A method for forming a capacitor comprising: providing a substrate having a node location to which electrical connection to a capacitor is to be made; forming a diffusion barrier layer over the node location; forming an inner capacitor plate over the diffusion barrier layer, the inner capacitor plate and diffusion barrier layer being patterned to respectively have an exposed sidewall; forming an oxidation barrier layer over the inner capacitor plate sidewall and the diffusion barrier layer sidewall and atop the inner capacitor plate; forming an oxide layer atop the oxidation barrier layer; forming a capacitor dielectric plate over the inner capacitor plate, the oxidation barrier layer restricting oxidation of at least the inner capacitor plate sidewall during provision of the capacitor dielectric plate; and forming an outer capacitor plate over the capacitor dielectric plate.
Claim 5
Independent Claim
134 words
A method for forming a capacitor comprising: providing a substrate having a node location to which electrical connection to a capacitor is to be made; forming a diffusion barrier layer over the node location; forming an inner capacitor plate over the diffusion barrier layer, the inner capacitor plate and diffusion barrier layer being patterned to respectively have an exposed sidewall; forming an oxidation barrier layer over the inner capacitor plate sidewall and the diffusion barrier layer sidewall and atop the inner capacitor plate; forming an oxide layer atop the oxidation barrier layer; forming a capacitor dielectric plate over the inner capacitor plate, the oxidation barrier layer restricting oxidation of at least the inner capacitor plate sidewall during provision of the capacitor dielectric plate; and forming an outer capacitor plate over the capacitor dielectric plate.
Claim 6
Dependent Claim
47 words
A method for forming a capacitor as claimed in claim 3, wherein after formation of the oxidation barrier layer, and before forming the capacitor dielectric plate, the method further comprises selectively planarizing the oxide layer relative to the oxidation barrier layer overlying the inner capacitor dielectric plate.
Claim 7
Dependent Claim
42 words
A method for forming a capacitor as claimed in claim 4, wherein after the step of planarize etching, and before providing the capacitor dielectric plate, removing the oxidation barrier layer from atop the inner capacitor plate to expose the inner capacitor plate.
Claim 8
Independent Claim
88 words
A method for forming a capacitor, comprising: providing a substrate having a node location to which electrical connection to a capacitor is to be made; forming an inner capacitor plate over the node location, the inner capacitor plate having an exposed sidewall; forming a first dielectric layer over the sidewall of the inner capacitor plate; forming a second dielectric layer over the first dielectric layer; planarizing the second dielectric layer relative to the first dielectric layer; and removing the first dielectric layer from over the inner capacitor plate.
Claim 9
Independent Claim
88 words
A method for forming a capacitor, comprising: providing a substrate having a node location to which electrical connection to a capacitor is to be made; forming an inner capacitor plate over the node location, the inner capacitor plate having an exposed sidewall; forming a first dielectric layer over the sidewall of the inner capacitor plate; forming a second dielectric layer over the first dielectric layer; planarizing the second dielectric layer relative to the first dielectric layer; and removing the first dielectric layer from over the inner capacitor plate.
Claim 10
Dependent Claim
36 words
A method for forming a capacitor as claimed in claim 6, wherein prior to forming the inner capacitor plate, the method further comprises forming diffusion barrier layer intermediate the node location and the inner capacitor plate.
Claim 11
Dependent Claim
19 words
A method for forming a capacitor as claimed in claim 6, wherein the first dielectric layer comprises silicon nitride.
Claim 12
Dependent Claim
19 words
A method for forming a capacitor as claimed in claim 6, wherein the second dielectric layer comprises silicon dioxide.
Claim 13
Dependent Claim
27 words
A method for forming a capacitor as claimed in claim 6, wherein the first dielectric layer comprises silicon nitride, and the second dielectric layer comprises silicon dioxide.
Claim 14
Dependent Claim
69 words
A method for forming a capacitor as claimed in claim 6, wherein after removing the first dielectric layer from atop the inner capacitor plate, the method further comprises forming a capacitor dielectric plate atop the inner capacitor plate, the first dielectric layer restricting oxidation of the inner capacitor plate sidewall during the provision of the capacitor dielectric plate; and forming an outer capacitor plate atop the capacitor dielectric plate.
Claim 15
Dependent Claim
28 words
A method for forming a capacitor as claimed in claim 11, wherein the capacitor dielectric plate comprises a material with a dielectric constant of greater than about 20.
Claim 16
Dependent Claim
20 words
A method for forming a capacitor as claimed in claim 11, wherein the capacitor dielectric plate comprises a ferroelectric material.
Claim 17
Independent Claim
86 words
A method for forming a capacitor, comprising: providing a substrate having a node; forming an inner capacitor plate having a top surface and sidewall over the node; forming an oxidation barrier layer over the top surface and sidewall of the inner capacitor plate; forming a dielectric layer over the oxidation barrier layer; forming a capacitor dielectric plate atop the oxidation barrier layer, the oxidation barrier layer restricting oxidation of sidewall of the inner capacitor plate; and forming an outer capacitor plate over the capacitor dielectric plate.
Claim 18
Independent Claim
86 words
A method for forming a capacitor, comprising: providing a substrate having a node; forming an inner capacitor plate having a top surface and sidewall over the node; forming an oxidation barrier layer over the top surface and sidewall of the inner capacitor plate; forming a dielectric layer over the oxidation barrier layer; forming a capacitor dielectric plate atop the oxidation barrier layer, the oxidation barrier layer restricting oxidation of sidewall of the inner capacitor plate; and forming an outer capacitor plate over the capacitor dielectric plate.
Claim 19
Independent Claim
71 words
A method for forming a capacitor, comprising: providing a substrate having a node; providing an electrical component having a top surface and sidewall over the node; forming an oxidation barrier layer over the top surface and sidewall of the electrical component; forming a dielectric layer over the oxidation barrier layer; planarizing the dielectric layer relative to the oxidation barrier layer; and removing the oxidation barrier layer from atop the electrical component.
Claim 20
Independent Claim
71 words
A method for forming a capacitor, comprising: providing a substrate having a node; providing an electrical component having a top surface and sidewall over the node; forming an oxidation barrier layer over the top surface and sidewall of the electrical component; forming a dielectric layer over the oxidation barrier layer; planarizing the dielectric layer relative to the oxidation barrier layer; and removing the oxidation barrier layer from atop the electrical component.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-11-30 | 2002-06-01 | 2002-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-11-30 | 2006-06-01 | 2006-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-11-30 | 2010-06-01 | 2010-12-01 | $7700.00 | Window Closed / Lapsed |