Abstract A method of forming low dielectric insulation between those pairs of conductive lines, of a level of interconnection for integrated circuits, having a gap of about 0.5 microns or less by depositing a nonconformal source with a poor step function for the insulating material, such as silane (SiH 4 ) as the silicon (Si) source for silicon dioxide (SiO 2 ), so as to create, in the gap, a large void whose dielectric constant is slightly greater than 1. After the formation of the void in the 0.5 microns or less gaps, the deposition of the nonconformal source material is stopped and a flowable insulating material, such as spin on glass, is coated on nonconformal insulating material to fill the remaining gaps. After etching the surfaces of the nonconformal and flowable insulating materials, another insulating layer is deposited and planarized to the desired overall thickness of the insulation. Alternatively, a thin conformal insulating layer is first deposited as a liner on the conductive lines. The resulting structure of the interconnection level comprises a layer of insulation between and on the conductive lines with the dielectric constant of the insulation between the pairs of conductive lines with gap of 0.5 or less being, in combination with the void, at least about 3 or lower, and substantially all of the remaining gaps are filled with the flowable insulating material and are void free with a composite dielectric constant of greater than about 3.5.
A method of depositing silicon containing insulating material on a patterned surface of metal conductive lines on a substrate separated by gaps, with at least one pair of said conductive lines with opposing walls having a narrow gap of about 0.5 microns or less between said walls and an aspect ratio of 2 to 1 or greater, comprising the steps of: depositing a nonconformal silicon containing insulating material between the walls of the conductive lines under conditions to provide a poor step coverage between the bottom of the gap and the top of the conductive lines so that the material forms shoulders on the tops of the conductive lines and bridges across the lines with a gap of about 0.5 microns or less, thereby forming a void in said narrow gap having an effective dielectric constant of less than about 3; filling remaining open gaps between the conductive lines by depositing a flowable insulating material on said nonconformal insulating material; and depositing a silicon containing insulating material on said nonconformal layer and over said flowable insulating material to complete the insulating layer between and over the conductive lines.
Claim 2
Independent Claim
188 words
A method of depositing silicon containing insulating material on a patterned surface of metal conductive lines on a substrate separated by gaps, with at least one pair of said conductive lines with opposing walls having a narrow gap of about 0.5 microns or less between said walls and an aspect ratio of 2 to 1 or greater, comprising the steps of: depositing a nonconformal silicon containing insulating material between the walls of the conductive lines under conditions to provide a poor step coverage between the bottom of the gap and the top of the conductive lines so that the material forms shoulders on the tops of the conductive lines and bridges across the lines with a gap of about 0.5 microns or less, thereby forming a void in said narrow gap having an effective dielectric constant of less than about 3; filling remaining open gaps between the conductive lines by depositing a flowable insulating material on said nonconformal insulating material; and depositing a silicon containing insulating material on said nonconformal layer and over said flowable insulating material to complete the insulating layer between and over the conductive lines.
Claim 3
Dependent Claim
40 words
The method of claim 1 wherein said metal of the conductive lines is either aluminum or an aluminum alloy and a thin conformal layer of not greater than 500 Å A is deposited before the nonconformal insulating material is deposited.
Claim 4
Dependent Claim
16 words
The method of claim 1 wherein the silicon source of the nonconformal insulating material is silane.
Claim 5
Dependent Claim
14 words
The method of claim 1 wherein the initial step coverage is less than 50%.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein, during the formation of said void, the step coverage is not greater than 20%.
Claim 7
Dependent Claim
14 words
The method of claim 1 wherein said flowable insulating material is spin on glass.
Claim 8
Dependent Claim
13 words
The method of claim 6 wherein said spin on glass is a siloxane.
Claim 9
Dependent Claim
22 words
The method of claim 1 wherein any of said spin on glass on the nonconformal insulating material outside said gaps is removed.
Claim 10
Dependent Claim
75 words
The method of claim 1 wherein said conductive lines include lines with opposing walls having an intermediate gap greater than 0.5 microns but less than 1.0 micron, and a void is formed partially in the gap and partially out of the gap and above the conductive lines so as to lower the resultant dielectric constant of the insulation in the intermediate gap but not to a lesser degree than the void in the narrow gap.