Semiconductor integrated circuit

Abstract

Abstract PURPOSE:To prevent an erroneous operation by interposing a cavity in part of a separating range between adjacent wirings to reduce a mutual capacity between the adjacent wirings. CONSTITUTION:A cavity 6 is formed between wirings 3 and 4, and a cavity 7 is formed between wirings 4 and 5. Silicon dioxide film is normally used as a film of insulating substance 2. When the cavity is provided, the capacity between adjacent wirings can be regarded as being series connection of three capacities of capacity between the wiring and the cavity, a capacity of the cavity, and capacity between the cavity and another wirings. Since the capacity of the cavity is approx. 1/4 as compared with the specific dielectric constant of the silicon dioxide film of insulating substance of other portion so that the insulating substance is air of low specific dielectric constant, the capacity between the adjacent wirings is reduced by providing the cavity. Thus, the rate of occupying the mutual capacity between the adjacent wirings in the entire wiring capacity can be suppressed to small value, and an erroneous operation hardly occurs to obtain an integrated circuit having wide operating margin.

Inventors

• 👤 Masaaki Yoshida
• 👤 正昭 吉田

Bibliographic Details