Patent US5811323A successfully refreshed from Google Patents.
US5811323A
Expired / Lapsed
US
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Process for fabricating a thin film transistor
Assignee: Seiko Epson Corp
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Filing: 1996-09-27
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Granted: 1998-09-22
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Expires: 2016-09-27
Abstract
Abstract There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600° C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
Inventors
- 👤 Mitsutoshi Miyasaka
- 👤 Thomas W. Little
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 11:17
CPC Classifications
H; H10; H10D; H10D89/00; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/122; Y10S148/15; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
62 words
A process for fabricating a thin film transistor of a semiconductor device, comprising: a first step of forming a polycrystalline silicon film on a substrate; a second step of immersing the substrate into a solution which contains an acid; and a third step of depositing a silicon oxide film on the polycrystalline silicon film, the third step directly following the second step.
Claim 2
Dependent Claim
62 words
A process for fabricating a thin film transistor of a semiconductor device, comprising: a first step of forming a polycrystalline silicon film on a substrate; a second step of immersing the substrate into a solution which contains an acid; and a third step of depositing a silicon oxide film on the polycrystalline silicon film, the third step directly following the second step.
Claim 3
Dependent Claim
79 words
A process for fabricating a thin film transistor of a semiconductor device comprising: a first step of forming a polycrystalline silicon film on a substrate; a second step of immersing the substrate into a solution which contains an acid; and a third step of depositing a silicon oxide film on the polycrystalline silicon film immediately after the second step, wherein the second step comprises immersing the substrate into a first solution and immersing the substrate into a second solution.
Claim 4
Dependent Claim
79 words
A process for fabricating a thin film transistor of a semiconductor device comprising: a first step of forming a polycrystalline silicon film on a substrate; a second step of immersing the substrate into a solution which contains an acid; and a third step of depositing a silicon oxide film on the polycrystalline silicon film immediately after the second step, wherein the second step comprises immersing the substrate into a first solution and immersing the substrate into a second solution.
Claim 5
Dependent Claim
13 words
The process of claim 2, wherein the first solution comprises HNO 3 .
Claim 6
Dependent Claim
17 words
The process of claim 1, wherein the silicon oxide film is formed by chemical vapor deposition (CVD).
Claim 7
Dependent Claim
16 words
The process of claim 4, wherein the silicon oxide film is formed by plasma CVD (PECVD).
Claim 8
Dependent Claim
81 words
A process for fabricating a thin film transistor of a semiconductor device, comprising: a first step of forming an amorphous silicon film on a substrate; a second step of crystallizing the amorphous silicon film formed on the substrate to obtain a polycrystalline silicon film; a third step of immersing the substrate into a solution which contains an acid; and a fourth step of depositing a silicon oxide film on the polycrystalline silicon film, the fourth step directly following the third step.
Claim 9
Dependent Claim
81 words
A process for fabricating a thin film transistor of a semiconductor device, comprising: a first step of forming an amorphous silicon film on a substrate; a second step of crystallizing the amorphous silicon film formed on the substrate to obtain a polycrystalline silicon film; a third step of immersing the substrate into a solution which contains an acid; and a fourth step of depositing a silicon oxide film on the polycrystalline silicon film, the fourth step directly following the third step.
Claim 10
Dependent Claim
22 words
The process of claim 6, wherein in the second step, the amorphous silicon film is crystallized at a temperature below 600° C.
Claim 11
Dependent Claim
25 words
The process of claim 6, wherein the third step comprises immersing the substrate into a first solution and immersing the substrate into a second solution.
Claim 12
Dependent Claim
13 words
The process of claim 8, wherein the first solution comprises HNO 3 .
Claim 13
Dependent Claim
17 words
The process of claim 6, wherein the silicon oxide film is formed by chemical vapor deposition (CVD).
Claim 14
Dependent Claim
16 words
The process of claim 10, wherein the silicon oxide film is formed by plasma CVD (PECVD).
Claim 15
Dependent Claim
11 words
The process of claim 2, wherein the second solution comprises HF.
Claim 16
Dependent Claim
11 words
The process of claim 8, wherein the second solution comprises HF.
Claim 17
Dependent Claim
10 words
The process of claim 1, wherein the solution comprises HF.
Claim 18
Dependent Claim
10 words
The process of claim 6, wherein the solution comprises HF.
Claim 19
Dependent Claim
39 words
The process of claim 1 wherein the second step comprises immersing the substrate into a first solution containing a first acid, and then immersing the substrate into a second solution containing a second acid, the second acid including HF.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-21 | 2002-03-23 | 2002-09-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-21 | 2006-03-23 | 2006-09-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-21 | 2010-03-23 | 2010-09-22 | $7700.00 | Window Closed / Lapsed |