Thin-film semiconductor device

Abstract

Abstract PURPOSE:To obtain a stable thin-film semiconductor device by constituting a gate insulating film so as to contain an insulating film having gettering action. CONSTITUTION:Polycrystalline Si 2, gate insulating films 3a-3c, a polycrystalline Si gate 4, a source 5, a drain 6, a protective film 7, a source electrode 8 and a drain electrode 9 are formed onto a glass substrate 1. A gate insulating afilm 3 consists of thin SiO2 3a, thin phosphorus glass 3b having high concentration and thick SiO23c. The gate insulating film 3b is composed of phosphorus glass having a gettering effect, the concentration of phosphorus extends over 5-30mol%, and the gate insulating film 3b is shaped in thickness of 10-500Angstrom through a vapor phase method or a thermal reaction method. The film 3a is made up of a thin thermal oxide film or SiO2 by a photochemical vapor phase reaction in order to acquire a clean interface, and thickness thereof ranges 50-500Angstrom . The film 3c is formed in thickness of 100-2000Angstrom through the vapor phase method in order to increase gate withstanding voltage.

Inventors

• 👤 Akio Mimura
• 👤 三村　秋男
• 👤 Nobutake Konishi
• 👤 信武 小西
• 👤 Yoshikazu Hosokawa
• 👤 細川　義和
• 👤 Takashi Suzuki
• 👤 隆 鈴木
• 👤 Takaya Suzuki
• 👤 誉也 鈴木
• 👤 Kenji Miyata
• 👤 健治 宮田

Bibliographic Details