US5637512A
Expired / Lapsed
US
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Method for fabricating a thin film semiconductor device
Assignee: Seiko Epson Corp
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Filing: 1995-05-02
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Granted: 1997-06-10
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Expires: 2015-05-02
Abstract
Abstract There is Disclosed a semiconductor device comprising a silicon film formed on a substrate having at least a surface formed of an insulative material, the silicon film being heat-treated at a temperature below 600° C. and being partially coated with a silicon oxide film formed by electronic cyclotron resonance plasma CVD.
Inventors
- 👤 Mitsutoshi Miyasaka
- 👤 Thomas W. Little
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 13:15
CPC Classifications
H; H10; H10D; H10D89/00; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P95/00; H10P95/94; Y; Y10; Y10S; Y10S148/00; Y10S148/017; Y10S148/122; Y10S148/15; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
124 words
A process for fabricating a thin film of a semiconductor device, said process being a low temperature process comprising: a first step of forming a silicon film on a substrate having at least a surface formed of an insulative material, said first step performed at a temperature below 600° C.; a second step of heat treating the silicon film formed on the substrate, said second step performed at a temperature below 600° C. after said first step; a third step of cleaning a surface of the silicon film by immersing the substrate into a solution; and a fourth step of forming a silicon oxide film on the silicon film by electronic cyclotron resonance plasma CVD, said fourth step performed immediately after said third step.
Claim 2
Dependent Claim
124 words
A process for fabricating a thin film of a semiconductor device, said process being a low temperature process comprising: a first step of forming a silicon film on a substrate having at least a surface formed of an insulative material, said first step performed at a temperature below 600° C.; a second step of heat treating the silicon film formed on the substrate, said second step performed at a temperature below 600° C. after said first step; a third step of cleaning a surface of the silicon film by immersing the substrate into a solution; and a fourth step of forming a silicon oxide film on the silicon film by electronic cyclotron resonance plasma CVD, said fourth step performed immediately after said third step.
Claim 3
Dependent Claim
140 words
A process for fabricating of a semiconductor device, said process being a low temperature process comprising: a first step of forming a silicon film for a semiconductor region of a thin film transistor on a substrate having at least a surface formed of an insulative material, said first step performed at a temperature below 600° C.; a second step of heat-treating the silicon film formed on the substrate, said second step performed at a temperature below 600° C. after said first step; a third step of cleaning a surface of the silicon film by immersing the substrate into a solution; and a fourth step of forming a gate insulting film of the thin film transistor made of a silicon oxide film on the silicon film by electronic cyclotron resonance plasma CVD, said fourth step performed immediately after said third step.
Claim 4
Dependent Claim
140 words
A process for fabricating of a semiconductor device, said process being a low temperature process comprising: a first step of forming a silicon film for a semiconductor region of a thin film transistor on a substrate having at least a surface formed of an insulative material, said first step performed at a temperature below 600° C.; a second step of heat-treating the silicon film formed on the substrate, said second step performed at a temperature below 600° C. after said first step; a third step of cleaning a surface of the silicon film by immersing the substrate into a solution; and a fourth step of forming a gate insulting film of the thin film transistor made of a silicon oxide film on the silicon film by electronic cyclotron resonance plasma CVD, said fourth step performed immediately after said third step.
Claim 5
Dependent Claim
109 words
A process for fabricating a thin film transistor of a semiconductor device, said process comprising: a first step of forming an amorphous silicon film on a substrate having at least a surface formed of an insulative material; a second step of crystallizing said amorphous silicon film to form a polycrystalline silicon film; a third step of cleaning the surface of the polycrystalline silicon film by immersing the substrate into a solution; and immediately after the third step, inserting the substrate into a PECVD device and radiating an oxygen plasma to the polycrystalline silicon film in the PECVD device to form a silicon oxide film on the polycrystalline silicon film.
Claim 6
Dependent Claim
109 words
A process for fabricating a thin film transistor of a semiconductor device, said process comprising: a first step of forming an amorphous silicon film on a substrate having at least a surface formed of an insulative material; a second step of crystallizing said amorphous silicon film to form a polycrystalline silicon film; a third step of cleaning the surface of the polycrystalline silicon film by immersing the substrate into a solution; and immediately after the third step, inserting the substrate into a PECVD device and radiating an oxygen plasma to the polycrystalline silicon film in the PECVD device to form a silicon oxide film on the polycrystalline silicon film.
References Cited (Backward Citations)
JPS5685869A
Cited
US4624737A
Cited
JPS6242565A
Cited
US4804640A
Cited
JPS6266629A
Cited
JPS6292329A
Cited
JPS6358875A
Cited
US4859908A
Cited
JPS63204656A
Cited
JPS63232337A
Cited
JPS6484229A
Cited
US4883766A
Cited
US5470799A
Cited
JPH0282579A
Cited
JPH0282577A
Cited
JPH0282578A
Cited
US4997746A
Cited
EP0383230A2
Cited
US5231297A
Cited
JPH03104209A
Cited
US5182495A
Cited
US5130264A
Cited
US5141885A
Cited
US5147826A
Cited
US5229334A
Cited
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