Forming method for thin film

Abstract

Abstract PURPOSE:To obtain preferable ohmic connection of a thin conductor film with a substrate by treating the surface of a conductive substrate by ion etching using active gas having strong etching property for an oxide film of the substrate. CONSTITUTION:Natural oxide films 10 are formed on the surfaces of a base region 5, a collector contacting region 6 and an emitter region 7 exposed in contacting windows 9 of an SiO2 insulating film 8 in an Si substrate to be processed. A substrate to be processed is ion etched with active gas having stronger etching property for the films 10 than the substrate such as CHF3 to expose the Si surfaces of the regions 5-7. Then, a thin aluminum film 11 is coated on the substrate which is finished to be ion etched. Thus, since the natural oxide film of the substrate is removed without damaging the surface of the substrate and without allowing a substance for modifying the conductive late surface to remain, a preferable ohmic connection of the thin conductor film with the substrate can be obtained.

Inventors

• 👤 Hiroshi Goto
• 👤 広志 後藤
• 👤 Kazuo Tanaka
• 👤 和夫 田中

Bibliographic Details