US5231297A
Expired / Lapsed
US
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Thin film transistor
Assignee: Sanyo Electric Co Ltd
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Filing: 1992-01-07
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Granted: 1993-07-27
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Expires: 2012-01-07
Abstract
Abstract A thin film transistor with a noncrystalline semiconductor film, wherein an amorphous semiconductor in a position corresponding to a channel between a source electrode and a drain electrode is polycrystallized, while on both side areas or around the polycrystallized area remains amorphous. The thin film transistor may be a noncrystalline semiconductor film with a heterojunction between a channel area and a source and drain area.
Inventors
- 👤 Shoichiro Nakayama
- 👤 Shigeru Noguchi
- 👤 Keiichi Sano
- 👤 Hiroshi Iwata
- 👤 Hiroyuki Kuriyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:09
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
100 words
A thin film transistor comprising: a gate electrode film; a gate insulating film which covers and insulates said gate electrode film; a source and drain electrode film; a polycrystalline semiconductor film provided between said gate insulating film and said source and drain electrode film, said semiconductor film having a source area and a drain area and defining a channel between said source area and said drain area, said semiconductor film further comprising a hetero-junction between the channel and said source and drain areas, said source and drain areas each being composed of polysilicon carbide, said channel being composed of polysilicon.
Claim 2
Dependent Claim
100 words
A thin film transistor comprising: a gate electrode film; a gate insulating film which covers and insulates said gate electrode film; a source and drain electrode film; a polycrystalline semiconductor film provided between said gate insulating film and said source and drain electrode film, said semiconductor film having a source area and a drain area and defining a channel between said source area and said drain area, said semiconductor film further comprising a hetero-junction between the channel and said source and drain areas, said source and drain areas each being composed of polysilicon carbide, said channel being composed of polysilicon.
Claim 3
Dependent Claim
28 words
A thin film transistor as set forth in claim 1, wherein said channel is intrinsic poly-silicon and said source area and drain area are each N-type polysilicon carbide.
Claim 4
Dependent Claim
28 words
A thin film transistor as set forth in claim 1, wherein said channel is P-type polysilicon and said source area and drain area are each N-type polysilicon carbide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-26 | 1997-01-25 | 1997-07-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-26 | 2001-01-25 | 2001-07-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-26 | 2005-01-25 | 2005-07-27 | $7700.00 | Window Closed / Lapsed |