US5130264A
Expired / Lapsed
US
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Method of making a thin film transistor
Assignee: Motors Liquidation Co
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Filing: 1991-09-23
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Granted: 1992-07-14
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Expires: 2011-09-23
Abstract
Abstract A thin film field effect transistor has an island of polysilicon on the surface of a substrate, preferably of an insulating material. A layer of silicon dioxide is on the surface of the substrate and surrounds the polysilicon island. The silicon dioxide layer is of substantially uniform thickness and contacts the edge of the polysilicon island. A gate insulator layer, preferably of silicon dioxide, of substantially uniform thickness is on the surface of the polysilicon island. A conductive gate, preferably of doped polysilicon, is on the gate insulator layer and extends across a portion of the polysilicon island. The portions of the polysilicon island at opposite sides of the gate are doped to form the source and drain of the transistor. The transistor is formed by applying a layer of polysilicon on the surface of a substrate and applying a mask over the portion of the polysilicon layer which is to form the island. The uncovered portion of the polysilicon layer is converted to silicon dioxide, such as by heating in an atmosphere containing oxygen. After removing the mask, the gate insulator layer is formed over the surface of the polysilicon island, and the gate is formed over the gate insulator.
Inventors
- 👤 John R. Troxell
- 👤 Marie I. Harrington
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:31
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6725; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D86/00; H10D86/01; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/15
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
144 words
A method of making a thin film field effect transistor on a substrate comprising the steps of: forming a layer of polysilicon on a surface of said substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over said polysilicon layer; oxidizing the portion of the polysilicon layer around the periphery of the mask completely through its thickness so as to form an island of polysilicon completely surrounded by silicon dioxide; removing said silicon nitride without removing said first layer of silicon dioxide over said island of polysilicon; forming a second layer of silicon dioxide by oxidizing a portion of said island of polysilicon; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of the top surface of the island, and forming source and drain regions in said polysilicon.
Claim 2
Independent Claim
144 words
A method of making a thin film field effect transistor on a substrate comprising the steps of: forming a layer of polysilicon on a surface of said substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over said polysilicon layer; oxidizing the portion of the polysilicon layer around the periphery of the mask completely through its thickness so as to form an island of polysilicon completely surrounded by silicon dioxide; removing said silicon nitride without removing said first layer of silicon dioxide over said island of polysilicon; forming a second layer of silicon dioxide by oxidizing a portion of said island of polysilicon; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of the top surface of the island, and forming source and drain regions in said polysilicon.
Claim 3
Dependent Claim
20 words
A method as set forth in claim 1 wherein said steps of oxidizing are performed at about 800 degrees C.
Claim 4
Dependent Claim
13 words
A method as set forth in claim 1 wherein said substrate comprises glass.
Claim 5
Independent Claim
144 words
A method of making a semiconductor device to improve the gate oxide breakdown voltage of said device comprising the steps of: forming a layer of polysilicon on a substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over polysilicon; oxidizing the portion of the polysilicon around the periphery of said mask completely through its thickness to form an island of polysilicon; removing said mask of silicon nitride without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by oxidizing a portion of said island of polysilicon so that said first and second layers of silicon dioxide form an insulating gate of substantially uniform thickness over said island; forming a conductive gate over said insulating layer and across a portion of said island; and forming source and drain regions in said polysilicon.
Claim 6
Independent Claim
144 words
A method of making a semiconductor device to improve the gate oxide breakdown voltage of said device comprising the steps of: forming a layer of polysilicon on a substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over polysilicon; oxidizing the portion of the polysilicon around the periphery of said mask completely through its thickness to form an island of polysilicon; removing said mask of silicon nitride without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by oxidizing a portion of said island of polysilicon so that said first and second layers of silicon dioxide form an insulating gate of substantially uniform thickness over said island; forming a conductive gate over said insulating layer and across a portion of said island; and forming source and drain regions in said polysilicon.
Claim 7
Dependent Claim
20 words
A method as set forth in claim 4 wherein said steps of oxidizing are performed at about 800 degrees C.
Claim 8
Dependent Claim
13 words
A method as set forth in claim 5 wherein said substrate comprises glass.
Claim 9
Dependent Claim
170 words
A low temperature method of making a semiconductor device comprising the steps of: forming a layer of polysilicon on a substrate; compensating for the low temperature stress-induced thin silicon dioxide regions formed during oxidation of polysilicon at temperatures ranging from about 500 to about 800 degrees C. comprising the steps of forming a first layer of silicon dioxide over a portion of the polysilicon; forming a mask over said polysilicon; oxidizing at a temperature ranging from about 500 to about 800 degrees C. the portion of the polysilicon around the periphery of said mask completely through its thickness to form an island of polysilicon; removing said mask without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by oxidizing a portion of said island at a temperature ranging from about 500 to about 800 degrees C.; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of said island; and forming source and drain regions in said island.
Claim 10
Dependent Claim
170 words
A low temperature method of making a semiconductor device comprising the steps of: forming a layer of polysilicon on a substrate; compensating for the low temperature stress-induced thin silicon dioxide regions formed during oxidation of polysilicon at temperatures ranging from about 500 to about 800 degrees C. comprising the steps of forming a first layer of silicon dioxide over a portion of the polysilicon; forming a mask over said polysilicon; oxidizing at a temperature ranging from about 500 to about 800 degrees C. the portion of the polysilicon around the periphery of said mask completely through its thickness to form an island of polysilicon; removing said mask without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by oxidizing a portion of said island at a temperature ranging from about 500 to about 800 degrees C.; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of said island; and forming source and drain regions in said island.
Claim 11
Dependent Claim
20 words
A method as set forth in claim 7 wherein said steps of oxidizing are performed at about 800 degrees C.
Claim 12
Dependent Claim
13 words
A method as set forth in claim 7 wherein said substrate comprises glass.
Claim 13
Independent Claim
175 words
A method of making a thin film field effect transistor on a substrate comprising the steps of: forming a layer of polysilicon on a surface of said substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over a portion of said polysilicon layer; oxidizing the portion of the polysilicon layer around the periphery of the mask completely through its thickness so as to form an island of polysilicon surrounded by silicon dioxide; removing said silicon nitride without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by oxidizing a portion of said island at a temperature ranging from about 500 degrees C. to about 800 degrees C. so that said first and second layer of silicon dioxide form an insulating gate of uniform thickness over said island of polysilicon; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of the top surface of the island, and forming source and drain regions in said polysilicon.
Claim 14
Independent Claim
175 words
A method of making a thin film field effect transistor on a substrate comprising the steps of: forming a layer of polysilicon on a surface of said substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over a portion of said polysilicon layer; oxidizing the portion of the polysilicon layer around the periphery of the mask completely through its thickness so as to form an island of polysilicon surrounded by silicon dioxide; removing said silicon nitride without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by oxidizing a portion of said island at a temperature ranging from about 500 degrees C. to about 800 degrees C. so that said first and second layer of silicon dioxide form an insulating gate of uniform thickness over said island of polysilicon; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of the top surface of the island, and forming source and drain regions in said polysilicon.
Claim 15
Dependent Claim
27 words
A method as set forth in claim 10 wherein said step of forming a second layer of silicon dioxide is by oxidizing at about 800 degrees C.
Claim 16
Independent Claim
152 words
A method of making a thin film field effect transistor on a substrate comprising the steps of: forming a layer of polysilicon on a surface of said substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over a portion of said polysilicon layer; oxidizing the portion of the polysilicon layer around the periphery of the mask completely through its thickness so as to form an island of polysilicon surrounded by silicon dioxide; removing said silicon nitride without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by plasma oxidizing a portion of said island at a temperature ranging from about 500 to about 600 degrees C.; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of the top surface of the island, and forming source and drain regions in said polysilicon.
Claim 17
Independent Claim
152 words
A method of making a thin film field effect transistor on a substrate comprising the steps of: forming a layer of polysilicon on a surface of said substrate; forming a first layer of silicon dioxide over said polysilicon; forming a mask of silicon nitride over a portion of said polysilicon layer; oxidizing the portion of the polysilicon layer around the periphery of the mask completely through its thickness so as to form an island of polysilicon surrounded by silicon dioxide; removing said silicon nitride without removing said first layer of silicon dioxide; forming a second layer of silicon dioxide by plasma oxidizing a portion of said island at a temperature ranging from about 500 to about 600 degrees C.; forming a conductive gate over said first and second layers of silicon dioxide and across a portion of the top surface of the island, and forming source and drain regions in said polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-07-14 | 1996-01-13 | 1996-07-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-07-14 | 2000-01-13 | 2000-07-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-07-14 | 2004-01-13 | 2004-07-14 | $7700.00 | Window Closed / Lapsed |