US5807607A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Polyol-based method for forming thin film aerogels on semiconductor substrates
Assignee: Texas Instruments Inc
•
Filing: 1996-11-14
•
Granted: 1998-09-15
•
Expires: 2016-11-14
Abstract
Abstract This invention has enabled a new, simple nanoporous dielectric fabrication method. In general, this invention uses a polyol, such as glycerol, as a solvent. This new method allows both bulk and thin film aerogels to be made without supercritical drying, freeze drying, or a surface modification step before drying. Prior art aerogels have required at least one of these steps to prevent substantial pore collapse during drying. Thus, this invention allows production of nanoporous dielectrics at room temperature and atmospheric pressure, without a separate surface modification step. Although not required to prevent substantial densification, this new method does not exclude the use of supercritical drying or surface modification steps prior to drying. In general, this new method is compatible with most prior art aerogel techniques. Although this new method allows fabrication of aerogels without substantial pore collapse during drying, there may be some permanent shrinkage during aging and/or drying.
Inventors
- 👤 Douglas M. Smith
- 👤 William C. Ackerman
- 👤 Richard A. Stoltz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6529; H10P14/6534; H10P14/6546; H10P14/63; H10P14/6326; H10P14/6342; H10P14/66; H10P14/665; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922
Claims Analysis
Total Claims: 44
Claim 1
Independent Claim
120 words
A method for forming a thin film aerogel on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate comprising a microelectronic circuit; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry aerogel by removing said pore fluid.
Claim 2
Independent Claim
120 words
A method for forming a thin film aerogel on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate comprising a microelectronic circuit; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry aerogel by removing said pore fluid.
Claim 3
Independent Claim
131 words
A method for forming a thin film aerogel on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate comprising a microelectronic circuit; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising a first polyol; wherein, said first polyol does not comprise a glycol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry aerogel by removing said pore fluid.
Claim 4
Independent Claim
131 words
A method for forming a thin film aerogel on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate comprising a microelectronic circuit; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising a first polyol; wherein, said first polyol does not comprise a glycol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry aerogel by removing said pore fluid.
Claim 5
Dependent Claim
14 words
The method of claim 2, wherein: said first solvent also comprises a second polyol.
Claim 6
Dependent Claim
12 words
The method of claim 3, wherein: said second polyol comprises a glycol.
Claim 7
Independent Claim
118 words
A method for forming a thin film nanoporous dielectric on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry, nanoporous dielectric by removing said pore fluid.
Claim 8
Independent Claim
118 words
A method for forming a thin film nanoporous dielectric on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry, nanoporous dielectric by removing said pore fluid.
Claim 9
Independent Claim
138 words
A method for forming a thin film nanoporous dielectric on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises an aerogel precursor reactant selected from the group consisting of metal alkoxides, at least partially hydrolyzed metal alkoxides, and combinations thereof, wherein said metal alkoxide contains metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry, nanoporous dielectric by removing said pore fluid without substantially collapsing said porous solid.
Claim 10
Independent Claim
138 words
A method for forming a thin film nanoporous dielectric on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises an aerogel precursor reactant selected from the group consisting of metal alkoxides, at least partially hydrolyzed metal alkoxides, and combinations thereof, wherein said metal alkoxide contains metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry, nanoporous dielectric by removing said pore fluid without substantially collapsing said porous solid.
Claim 11
Dependent Claim
26 words
The method of claim 6 wherein: the molar ratio of said first solvent molecules to the metal atoms in said reactant is no greater than 12:1.
Claim 12
Dependent Claim
26 words
The method of claim 6, wherein: the molar ratio of said first solvent molecules to the metal atoms in said reactant is between 1:2 and 12:1.
Claim 13
Dependent Claim
26 words
The method of claim 6, wherein: the molar ratio of said first solvent molecules to the metal atoms in said reactant is between 2.5:1 and 12:1.
Claim 14
Dependent Claim
24 words
The method of claim 6, wherein: said nanoporous dielectric has a porosity greater than 60% and an average pore diameter less than 100 nm.
Claim 15
Dependent Claim
36 words
The method of claim 6, wherein: said forming step is performed in a drying atmosphere, wherein the pressure of said drying atmosphere during said forming step is less than the critical pressure of said pore fluid.
Claim 16
Dependent Claim
24 words
The method of claim 6, wherein: the temperature of said substrate during said forming step is above the freezing temperature of said pore fluid.
Claim 17
Dependent Claim
73 words
The method of claim 6, wherein: said forming step is performed in a drying atmosphere, wherein the pressure of said drying atmosphere during said forming step is less than the critical pressure of said pore fluid, the temperature of said substrate during said forming step is above the freezing temperature of said pore fluid, and wherein, said method does not comprise the step of adding a surface modification agent before said forming step.
Claim 18
Dependent Claim
91 words
The method of claim 6, wherein: said forming step is performed in a drying atmosphere, wherein the pressure of said drying atmosphere during said forming step is less than the critical pressure of said pore fluid, the temperature of said substrate during said forming step is above the freezing temperature of said pore fluid, and said nanoporous dielectric has a porosity greater than 60% and an average pore diameter less than 100 nm; wherein, said method does not comprise the step of adding a surface modification agent before said forming step.
Claim 19
Dependent Claim
17 words
The method of claim 6, further compromising the step of: aging said gel before said forming step.
Claim 20
Dependent Claim
20 words
The method of claim 15, wherein: at least part of said aging step is performed in a substantially closed container.
Claim 21
Dependent Claim
20 words
The method of claim 15, wherein: the temperature of said gel during said aging is greater than 30 degrees C.
Claim 22
Dependent Claim
20 words
The method of claim 15, wherein: the temperature of said gel during said aging is greater than 80 degrees C.
Claim 23
Dependent Claim
20 words
The method of claim 15, wherein: the temperature of said gel during said aging is greater than 130 degrees C.
Claim 24
Dependent Claim
21 words
The method of claim 6, wherein: said porous solid has less than 2% permanent volume reduction during said pore fluid removal.
Claim 25
Dependent Claim
17 words
The method of claim 6, wherein: said porous solid remains substantially uncollapsed after said pore fluid removal.
Claim 26
Dependent Claim
24 words
The method of claim 6, wherein: said porous solid has less than 5% volume reduction (including temporary volume reduction) during said pore fluid removal.
Claim 27
Dependent Claim
24 words
The method of claim 6, wherein: said porous solid has less than 1% volume reduction (including temporary volume reduction) during said pore fluid removal.
Claim 28
Dependent Claim
32 words
The method of claim 6, wherein: said allowing step is performed in a gelation atmosphere, wherein the concentration of a vapor of said first solvent in said gelation atmosphere is passively controlled.
Claim 29
Dependent Claim
32 words
The method of claim 6, wherein: said allowing step is performed in a gelation atmosphere, wherein the concentration of a vapor of said first solvent in said gelation atmosphere is substantially uncontrolled.
Claim 30
Dependent Claim
25 words
The method of claim 6, wherein: said reactant is a metal alkoxide selected from the group consisting of tetraethylorthosilicate, tetramethylorthosilicate, methyltriethoxysilane, 1,2-Bis(trimethoxysilyl)ethane and combinations thereof.
Claim 31
Dependent Claim
10 words
The method of claim 6, wherein: said reactant is tetraethylorthosilicate.
Claim 32
Dependent Claim
16 words
The method of claim 6, wherein: said dry, nanoporous dielectric has a porosity greater than 60%.
Claim 33
Dependent Claim
17 words
The method of claim 6, wherein: said dry, nanoporous dielectric has a porosity between 60% and 90%.
Claim 34
Dependent Claim
16 words
The method of claim 6, wherein: said dry, nanoporous dielectric has a porosity greater than 80%.
Claim 35
Dependent Claim
16 words
The method of claim 6, wherein: said dry, nanoporous dielectric has a porosity greater than 30%.
Claim 36
Dependent Claim
16 words
The method of claim 6, wherein: said dry, nanoporous dielectric has a porosity greater than 45%.
Claim 37
Dependent Claim
17 words
The method of claim 6, wherein: said dry, nanoporous dielectric has a porosity between 15% and 40%.
Claim 38
Dependent Claim
13 words
The method of claim 6, wherein: said precursor sol comprises a gelation catalyst.
Claim 39
Dependent Claim
17 words
The method of claim 6, further comprising the step of: adding a gelation catalyst after said deposition.
Claim 40
Dependent Claim
27 words
The method of claim 6, further comprising the step of: replacing at least part of said pore fluid with a liquid before said removing pore fluid step.
Claim 41
Dependent Claim
10 words
The method of claim 36, wherein: said liquid comprises acetone.
Claim 42
Dependent Claim
15 words
The method of claim 6, further comprising the step of: annealing said dry, nanoporous dielectric.
Claim 43
Independent Claim
116 words
A method for forming a thermal insulator on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry, thermal insulator by removing said pore fluid.
Claim 44
Independent Claim
116 words
A method for forming a thermal insulator on a semiconductor substrate, the method comprising the steps of: a) providing a semiconductor substrate; b) depositing an aerogel precursor sol upon said substrate; wherein said aerogel precursor sol comprises a metal-based aerogel precursor reactant, wherein said reactant is a compound containing metal atoms, and a first solvent comprising glycerol; wherein, the molar ratio of said first solvent molecules to the metal atoms in said reactant is at least 1 first solvent molecule per 16 metal atoms; c) allowing said deposited sol to create a gel, wherein said gel comprises a porous solid and a pore fluid; and d) forming a dry, thermal insulator by removing said pore fluid.
References Cited (Backward Citations)
US4230803A
Cited
US4851150A
Cited
US4713233A
Cited
US4954327A
Cited
EP0382310A2
Cited
US5207814A
Cited
US5097317A
Cited
US5391364A
Cited
EP0454239A2
Cited
US5076980A
Cited
WO1992003378A1
Cited
US5242647A
Cited
US5409683A
Cited
US5275796A
Cited
US5368887A
Cited
US5294480A
Cited
US5496527A
Cited
US5470802A
Cited
US5488015A
Cited
US5548159A
Cited
US5494858A
Cited
US5561318A
Cited
US5504042A
Cited
US5523615A
Cited
US5472913A
Cited
US5661344A
Cited
US5525857A
Cited
US5536965A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-09-14 | 2002-03-16 | 2002-09-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-09-14 | 2006-03-16 | 2006-09-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-09-14 | 2010-03-16 | 2010-09-15 | $7700.00 | Window Closed / Lapsed |