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Patent US5804259A successfully refreshed from Google Patents.
US5804259A
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Method and apparatus for depositing a multilayered low dielectric constant film
Assignee: Applied Materials Inc
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Filing: 1996-11-07
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Granted: 1998-09-08
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Expires: 2016-11-07
Abstract
Abstract A method and apparatus for forming a multilayer insulating film on a substrate involves forming a number of carbon-based layers on the substrate, each interlaid with layers of organic material, such as parylene. Preferably, the carbon-based layers are formed using a high-density plasma chemical vapor deposition system, although other CVD systems may also be used. The result is a multilayer insulating film having a low overall dielectric constant, excellent gap-fill characteristics, and desirable thermal properties.
Inventors
- 👤 Stuardo Robles
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:44
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/68; H10P14/683; B; B05; B05D; B05D1/00; B05D1/60; C; C23; C23C; C23C16/00; C23C16/22; C23C16/26; C23C16/44; C23C16/50; C23C16/505; C23C16/507; C23C16/52; H10P14/66; H10P14/662; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6502; H10P14/6506; H10P14/687; H10P14/69; H10P14/6902; Y; Y10; Y10S; Y10S427/00; Y10S427/103; Y10S427/106
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
57 words
A method for forming an insulating film on a substrate, the method comprising steps of: forming a diamond like compound (DLC) film on said substrate; forming a polymer film on said DLC film; and forming a fluorinated DLC film on said polymer film, with said polymer film abutting both said DLC film and said fluorinated DLC film.
Claim 2
Independent Claim
57 words
A method for forming an insulating film on a substrate, the method comprising steps of: forming a diamond like compound (DLC) film on said substrate; forming a polymer film on said DLC film; and forming a fluorinated DLC film on said polymer film, with said polymer film abutting both said DLC film and said fluorinated DLC film.
Claim 3
Dependent Claim
64 words
The method of claim 1 wherein said step of forming said DLC film and said step of forming said fluorinated DLC film further comprises the steps of: introducing a process gas into a chamber, said process gas including a gaseous source of carbon and a gaseous source of fluorine; and forming a plasma from said process gas by applying a first RF power component.
Claim 4
Dependent Claim
41 words
The method of claim 2 wherein said step of forming said DLC film and said step of forming said fluorinated DLC film further comprises the step of: biasing said plasma toward said substrate to promote a sputtering effect of said plasma.
Claim 5
Dependent Claim
16 words
The method of claim 2 wherein said gaseous source of carbon is methane (CH 4 ).
Claim 6
Dependent Claim
14 words
The method of claim 2 wherein said gaseous source of carbon is a hydrocarbon.
Claim 7
Dependent Claim
15 words
The method of claim 2 wherein said gaseous source of fluorine is CF 4 .
Claim 8
Dependent Claim
75 words
The method of claim 2 further including steps of forming atop said fluorinated DLC film, a plurality of additional polymer films and a plurality of fluorinated DLC films, with one of said plurality of additional fluorinated DLC films being disposed between consecutive layers of said plurality of additional polymer films, forming a multi-layered stacked structure, said multi-layered stacked structure having a desired thickness; and forming a final carbon-based film cap on said multi-layered stacked structure.
Claim 9
Dependent Claim
31 words
The method of claim 1 wherein said step of forming a polymer film further comprises steps of: vaporizing a polymerizable material; and flowing the vaporized polymerizable material into a deposition chamber.
Claim 10
Independent Claim
14 words
The method of claims 8 wherein said polymerizable material is a dimer of p-xylylene.
Claim 11
Dependent Claim
35 words
The method of claim 9 wherein said dimer of p-xylylene and a carrier gas are passed through a decomposition chamber at a temperature of between 700°-900° C. to convert the dimer to a reactive monomer.
Claim 12
Dependent Claim
27 words
The method of claim 7 wherein said multi-layered structure includes five carbon-based layers and four organic layers, and has an overall dielectric constant of less than 3.0.
Claim 13
Dependent Claim
58 words
The method as recited in claim 7 wherein said plurality of carbon-based layers have differing quantities of fluorine and carbon present therein with the quantities of fluorine and carbon present in one of said plurality of carbon-based layers being dependent upon a position of said one of said plurality of carbon-based layers amongst said plurality of carbon-based layers.
Claim 14
Dependent Claim
33 words
The method as recited in claim 12 wherein said quantity of carbon present in said plurality of carbon-based layers decreases as a distance between said plurality of carbon-based layers and said substrate increases.
Claim 15
Independent Claim
114 words
A method for forming a dielectric film on a substrate comprising steps of: placing said substrate in a deposition zone; during a first deposition stage introducing, into said deposition zone, a fluorine source and a carbon source so as to obtain a predetermined ratio of said fluorine source to said carbon source to form a first DLC film on said substrate; during a second deposition stage, subsequent to said first deposition stage, forming a polymer film atop said first DLC film and during a third deposition stage, subsequent to said second deposition stage, increasing said ratio of said fluorine source to said carbon-source to form a second DLC film atop of said polymer film.
Claim 16
Independent Claim
114 words
A method for forming a dielectric film on a substrate comprising steps of: placing said substrate in a deposition zone; during a first deposition stage introducing, into said deposition zone, a fluorine source and a carbon source so as to obtain a predetermined ratio of said fluorine source to said carbon source to form a first DLC film on said substrate; during a second deposition stage, subsequent to said first deposition stage, forming a polymer film atop said first DLC film and during a third deposition stage, subsequent to said second deposition stage, increasing said ratio of said fluorine source to said carbon-source to form a second DLC film atop of said polymer film.
Claim 17
Dependent Claim
57 words
The method as recited in claim 14 further including a step of forming atop said second DLC film, a plurality of additional polymer films and a plurality of DLC films, with one of said plurality of additional DLC films being disposed between consecutive layers of said plurality of additional polymer films, defining forming a multi-layered stacked structure.
Claim 18
Dependent Claim
20 words
The method as recited in claim 15 further including a step of forming a cap layer atop said multilayer structure.
Claim 19
Independent Claim
136 words
A method for forming a dielectric film on a substrate disposed in a process chamber, said method comprising steps of: placing said substrate in a deposition zone of said process chamber; forming, on said substrate, a plurality carbon-based layers, with consecutive carbon-based layers having differing thermal conductivity characteristics; and forming, between said consecutive carbon-based layers, a polymer layer, with said plurality of carbon-based layers having differing quantities of fluorine and carbon present therein with the quantities of fluorine and carbon present in one of said plurality of carbon-based layers being dependent upon a position of said one of said plurality of carbon-based layers amongst said plurality of carbon-based layers so that said quantity of carbon present in said plurality of carbon-based layers decreases as a distance between said plurality of carbon-based layers and said substrate increases.
Claim 20
Independent Claim
136 words
A method for forming a dielectric film on a substrate disposed in a process chamber, said method comprising steps of: placing said substrate in a deposition zone of said process chamber; forming, on said substrate, a plurality carbon-based layers, with consecutive carbon-based layers having differing thermal conductivity characteristics; and forming, between said consecutive carbon-based layers, a polymer layer, with said plurality of carbon-based layers having differing quantities of fluorine and carbon present therein with the quantities of fluorine and carbon present in one of said plurality of carbon-based layers being dependent upon a position of said one of said plurality of carbon-based layers amongst said plurality of carbon-based layers so that said quantity of carbon present in said plurality of carbon-based layers decreases as a distance between said plurality of carbon-based layers and said substrate increases.
Claim 21
Dependent Claim
33 words
The method as recited in claim 17 wherein said quantity of fluorine present in said plurality of carbon-based layers increases as a distance between said plurality of carbon-based layers and said substrate increases.
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