US5491002A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multilayer CVD diamond films
Assignee: Diamond Innovations Inc
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Filing: 1995-03-08
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Granted: 1996-02-13
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Expires: 2015-03-08
Abstract
Abstract Multilayer CVD diamond films are provided, wherein grain boundaries of the diamond layers are interrupted by renucleating and growing diamond on new nucleation sites comprised of metal. These nucleation sites are positioned on the interface between diamond layers. Methods for producing these multilayer CVD diamond films are also provided wherein the diamond growth on a substrate is interrupted by the deposition of metals which provide new nucleation sites. Diamond growth is then reinitiated.
Inventors
- 👤 David E. Slutz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:05
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/04; C23C16/045; C23C16/06; C23C16/26; C23C16/27; C23C16/271; C23C16/279; C23C16/32; C23C28/00; C23C28/04; C23C28/046; Y; Y10; Y10S; Y10S427/00; Y10S427/103; Y10T; Y10T428/00; Y10T428/30
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
88 words
A method for forming a multilayer chemical vapor deposited (CVD) diamond film, consisting essentially of the steps of: (1) depositing diamond on a heated substrate by impingement with an excited hydrocarbon-hydrogen gas mixture under conditions of temperature, pressure and gas concentration which promote diamond nucleation and growth on the substrate; (2) interrupting the diamond growth of said step (1); (3) depositing a metal carbide layer of less than 0.01 microns suitable for nucleating diamond on the diamond formed in said step (1); and (4) reinitiating said step (1).
Claim 2
Independent Claim
88 words
A method for forming a multilayer chemical vapor deposited (CVD) diamond film, consisting essentially of the steps of: (1) depositing diamond on a heated substrate by impingement with an excited hydrocarbon-hydrogen gas mixture under conditions of temperature, pressure and gas concentration which promote diamond nucleation and growth on the substrate; (2) interrupting the diamond growth of said step (1); (3) depositing a metal carbide layer of less than 0.01 microns suitable for nucleating diamond on the diamond formed in said step (1); and (4) reinitiating said step (1).
Claim 3
Dependent Claim
30 words
A method as in claim 1, wherein the metal in the metal carbide layer is selected from the group consisting of titanium, zirconium, hafnium, vanadium, niobium, tantalum, molybdenum, and tungsten.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-02-12 | 1999-08-14 | 2000-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-02-12 | 2003-08-14 | 2004-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-02-12 | 2007-08-14 | 2008-02-13 | $7700.00 | Window Closed / Lapsed |