US5793075A
Expired / Lapsed
US
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Deep trench cell capacitor with inverting counter electrode
Assignee: Qimonda AG
•
Filing: 1996-07-30
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Granted: 1998-08-11
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Expires: 2016-07-30
Abstract
Abstract The preferred embodiment provides an integrated circuit capacitor that achieves a high capacitance by using an inversion layer in the substrate as the plate counter electrode for the capacitor. The inversion layer is created by forming a trench capacitor in a lightly doped substrate. With a sufficient workfunction difference between the storage node material and the isolation band the surface of the lightly doped substrate inverts, with the inversion charge being supplied by the isolation band. This inversion layer serves as the plate counter electrode for the capacitor.
Inventors
- 👤 Johann Alsmeier
- 👤 Jack Allan Mandelman
- 👤 James Anthony O'Neill
- 👤 Christopher Parks
- 👤 Paul Christian Parries
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:00
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/30; H10B12/37
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
47 words
An integrated circuit capacitor comprising: a) a lightly doped substrate; b) a deep trench storage node extending into said substrate; c) a dielectric between said deep trench storage node and said substrate; and d) a counter electrode, said counter electrode comprising an inversion region in said substrate.
Claim 2
Dependent Claim
47 words
An integrated circuit capacitor comprising: a) a lightly doped substrate; b) a deep trench storage node extending into said substrate; c) a dielectric between said deep trench storage node and said substrate; and d) a counter electrode, said counter electrode comprising an inversion region in said substrate.
Claim 3
Dependent Claim
17 words
The capacitor of claim 1 wherein said inversion region forms without applied bias to said storage node.
Claim 4
Dependent Claim
16 words
The capacitor of claim 1 wherein said inversion region is proximate and surrounds said storage node.
Claim 5
Dependent Claim
22 words
The capacitor of claim 1 further comprising an isolation layer and wherein said isolation layer supplies charge carriers for said inversion layer.
Claim 6
Dependent Claim
26 words
The capacitor of claim 4 wherein said isolation layer further serves as the connection to said counter electrode and determines the potential of said counter electrode.
Claim 7
Dependent Claim
38 words
The capacitor of claim 1 wherein said storage node comprises semiconductor material doped greater than 5×10 19 ions/cm 3 and wherein said lightly doped substrate comprises semiconductor material doped between 1×10 14 and 1×10 17 ions/cm 3 .
Claim 8
Dependent Claim
38 words
The capacitor of claim 1 wherein said storage node comprises semiconductor material doped greater than 1×10 20 ions/cm 3 and wherein said lightly doped substrate comprises semiconductor material doped between 1×10 15 and 5×10 15 ions/cm 3 .
Claim 9
Dependent Claim
36 words
The capacitor of claim 3 wherein said isolation layer comprises N type material with a doping dose between 1×10 13 and 20×10 13 ions/cm 2 and wherein said conductors supplied to said inversion layer comprises electrons.
Claim 10
Dependent Claim
34 words
The capacitor of claim 3 wherein said isolation layer comprises N type material with a doping dose of about 5×10 13 ions/cm 2 and wherein said conductors supplied to said inversion layer comprises electrons.
Claim 11
Dependent Claim
36 words
The capacitor of claim 3 wherein said isolation layer comprises P type material with a doping dose between 1×10 13 and 20×10 13 ions/cm 2 and wherein said conductors supplied to said inversion layer comprise holes.
Claim 12
Dependent Claim
34 words
The capacitor of claim 3 wherein said isolation layer comprises P type material with a doping dose of about 5×10 13 ions/cm 2 and wherein said conductors supplied to said inversion layer comprise holes.
Claim 13
Dependent Claim
14 words
The capacitor of claim 1 wherein said counter electrode is a common counter electrode.
Claim 14
Dependent Claim
74 words
An integrated circuit capacitor comprising: a) a P - substrate; b) a N isolation band adjacent said P - substrate; c) a N + type trench storage node extending through said N isolation band and into said P 31 substrate; and d) a counter electrode, said counter electrode comprising an inversion region formed in said P - substrate proximate said N + type trench storage node with carriers supplied from said N isolation band.
Claim 15
Dependent Claim
74 words
An integrated circuit capacitor comprising: a) a P - substrate; b) a N isolation band adjacent said P - substrate; c) a N + type trench storage node extending through said N isolation band and into said P 31 substrate; and d) a counter electrode, said counter electrode comprising an inversion region formed in said P - substrate proximate said N + type trench storage node with carriers supplied from said N isolation band.
Claim 16
Dependent Claim
17 words
The capacitor of claim 13 wherein said inversion region forms without applied bias to said storage node.
Claim 17
Dependent Claim
42 words
The capacitor of claim 13 wherein said storage node comprises N + type material doped greater than 5×10 19 ions/cm 3 and wherein said lightly doped substrate comprises P - type material doped between 1×10 14 and 1×10 17 ions/cm 3 .
Claim 18
Dependent Claim
42 words
The capacitor of claim 13 wherein said storage node comprises N + type material doped greater than 1×10 20 ions/cm 3 and wherein said lightly doped substrate comprises P - type material doped between 1×10 15 and 5×10 15 ions/cm 3 .
Claim 19
Dependent Claim
26 words
The capacitor of claim 13 wherein said N type isolation band comprises material with a doping dose between 1×10 13 and 20×10 13 ions/cm 2 .
Claim 20
Dependent Claim
24 words
The capacitor of claim 13 wherein said N type isolation band comprises material with a doping dose of about 5×10 13 ions/cm 2 .
Claim 21
Dependent Claim
21 words
The capacitor of claim 13 wherein said inversion region is isolated from remaining portions of said substrate by a depletion region.
Claim 22
Dependent Claim
21 words
The capacitor of claim 13 wherein said counter electrode is a common counter electrode connected through said N isolation band region.
Claim 23
Dependent Claim
74 words
An integrated circuit capacitor comprising; a) a N - substrate; b) a P isolation band adjacent said N - substrate; c) a P + type trench storage node extending through said P isolation band and into said N - substrate; and d) a counter electrode, said counter electrode comprising an inversion region formed in said N - substrate proximate said P + type trench storage node with carriers supplied from said P isolation band.
Claim 24
Dependent Claim
74 words
An integrated circuit capacitor comprising; a) a N - substrate; b) a P isolation band adjacent said N - substrate; c) a P + type trench storage node extending through said P isolation band and into said N - substrate; and d) a counter electrode, said counter electrode comprising an inversion region formed in said N - substrate proximate said P + type trench storage node with carriers supplied from said P isolation band.
Claim 25
Dependent Claim
17 words
The capacitor of claim 21 wherein said inversion region forms without applied bias to said storage node.
Claim 26
Dependent Claim
42 words
The capacitor of claim 21 wherein said storage node comprises P + type material doped greater than 5×10 19 ions/cm 3 and wherein said lightly doped substrate comprises N - type material doped between 1×10 14 and 1×10 17 ions/cm 3 .
Claim 27
Dependent Claim
42 words
The capacitor of claim 21 wherein said storage node comprises P + type material doped greater than 1×10 20 ions/cm 3 and wherein said lightly doped substrate comprises N - type material doped between 1×10 15 and 5×10 15 ions/cm 3 .
Claim 28
Dependent Claim
26 words
The capacitor of claim 21 wherein said P type isolation band comprises material with a doping dose between 1×10 13 and 20×10 13 ions/cm 2 .
Claim 29
Dependent Claim
24 words
The capacitor of claim 21 wherein said P type isolation band comprises material with a doping dose of about 5×10 13 ions/cm 2 .
Claim 30
Dependent Claim
21 words
The capacitor of claim 21 wherein said inversion region is isolated from remaining portions of said substrate by a depletion region.
Claim 31
Dependent Claim
21 words
The capacitor of claim 21 wherein said counter electrode is a common counter electrode connected through said P isolation band region.
Claim 32
Dependent Claim
40 words
An integrated circuit capacitor comprising: a) a storage node; b) a counter electrode, said counter electrode comprising an inversion region formed in a substrate surrounding said storage node; and c) a dielectric between said storage node and said counter electrode.
Claim 33
Dependent Claim
40 words
An integrated circuit capacitor comprising: a) a storage node; b) a counter electrode, said counter electrode comprising an inversion region formed in a substrate surrounding said storage node; and c) a dielectric between said storage node and said counter electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-08-10 | 2002-02-09 | 2002-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-08-10 | 2006-02-09 | 2006-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-08-10 | 2010-02-09 | 2010-08-11 | $7700.00 | Window Closed / Lapsed |