US5744752A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Hermetic thin film metallized sealband for SCM and MCM-D modules
Assignee: International Business Machines Corp
•
Filing: 1995-06-05
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Granted: 1998-04-28
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Expires: 2015-06-05
Abstract
Abstract A module for encapsulating a microelectronic device has a polished mating surface around the periphery of the substrate on which is deposited at least one thin film sealband fabricated at a temperature no greater than about 400° C. The sealband has a thickness of less than about 0.001 in. and comprising a metal capable of wetting molten solder which has a melting point no greater than about 400° C. and adhering to the solder after solidification. A layer of the solder is disposed between the sealbands of the cap and substrate forming a hermetic seal for the module.
Inventors
- 👤 Dale C. McHerron
- 👤 Hilton T. Toy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 06:37
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/60; H10W76/10; H10W76/17; H10W90/00; H10W90/701; H10W90/721; H10W90/724
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
164 words
A reworkable hermetic module for encapsulating at least one microelectronic device having a thin film wiring layer comprising: a cap for said module having a mating surface extending uninterruptedly around the periphery of said cap; a substrate for said module, said substrate having a polished planar upper surface upon which is deposited a thin film wiring layer for said mircroelectronic device comprising at least one polymeric dielectric material and at least one wiring path of metallic material, said substrate having a mating surface on said polished surface extending uninterruptedly around the periphery of said substrate; at least one thin film sealing layer on the mating surface of said substrate, said sealing layer having a thickness of less than about 0.001 in. and comprising a metal capable of wetting molten solder which has a melting point no greater than about 400° C. and adhering to said solder after solidification; and a layer of said solder on said substrate forming a hermetic seal for said module.
Claim 2
Dependent Claim
164 words
A reworkable hermetic module for encapsulating at least one microelectronic device having a thin film wiring layer comprising: a cap for said module having a mating surface extending uninterruptedly around the periphery of said cap; a substrate for said module, said substrate having a polished planar upper surface upon which is deposited a thin film wiring layer for said mircroelectronic device comprising at least one polymeric dielectric material and at least one wiring path of metallic material, said substrate having a mating surface on said polished surface extending uninterruptedly around the periphery of said substrate; at least one thin film sealing layer on the mating surface of said substrate, said sealing layer having a thickness of less than about 0.001 in. and comprising a metal capable of wetting molten solder which has a melting point no greater than about 400° C. and adhering to said solder after solidification; and a layer of said solder on said substrate forming a hermetic seal for said module.
Claim 3
Dependent Claim
28 words
The module of claim 1 wherein said thin film sealing layer on sad substrate comprises successive layers of chromium, nickel and gold deposited directly on the mating surface.
Claim 4
Dependent Claim
20 words
The module of claim 1 wherein said metal is selected from the group consisting of chromium nickel, copper and gold.
Claim 5
Dependent Claim
24 words
The module of claim 1 wherein said solder is selected from the group consisting of solders comprising lead, tin, bismuth, Indium, gold or antimony.
Claim 6
Dependent Claim
25 words
The module of claim 1 wherein said thin film sealing layer is applied directly on the surface of the substrate without an intermediate treatment layer.
Claim 7
Dependent Claim
39 words
The module of claim 1 wherein said polished planar upper surface of said substrate upon which is deposited said thin film wiring layer and said thin film sealing layer has a surface roughness no greater than about 500 angstroms.
Claim 8
Dependent Claim
152 words
A reworkable hermetic module for encapsulating at least one microelectronic device having a thin film wiring layer comprising: a cap for said module having a mating surface extending uninterruptedly around the periphery of said cap; a substrate for said module, said substrate having a polished planar upper surface upon which is deposited a thin film wiring layer for said mircroelectronic device comprising at least one polymeric dielectric material and at least on wiring path of metallic material, said substrate having a mating surface on said polished surface extending uninterruptedly around the periphery of said substrate; at least one thin film sealing layer on the mating surface of said substrate, said sealing layer having a thickness of less than about 0.001 in. and comprising successive layers of chromium, nickel and gold deposited directly on the mating surface; and a layer of said solder on said substrate forming a hermetic seal for said module.
Claim 9
Dependent Claim
152 words
A reworkable hermetic module for encapsulating at least one microelectronic device having a thin film wiring layer comprising: a cap for said module having a mating surface extending uninterruptedly around the periphery of said cap; a substrate for said module, said substrate having a polished planar upper surface upon which is deposited a thin film wiring layer for said mircroelectronic device comprising at least one polymeric dielectric material and at least on wiring path of metallic material, said substrate having a mating surface on said polished surface extending uninterruptedly around the periphery of said substrate; at least one thin film sealing layer on the mating surface of said substrate, said sealing layer having a thickness of less than about 0.001 in. and comprising successive layers of chromium, nickel and gold deposited directly on the mating surface; and a layer of said solder on said substrate forming a hermetic seal for said module.
Claim 10
Dependent Claim
24 words
The module of claim 7 wherein said solder is selected from the group consisting of solders comprising lead, tin, bismuth, Indium, gold or antimony.
Claim 11
Dependent Claim
39 words
The module of claim 7 wherein said polished planar upper surface of said substrate upon which is deposited said thin film wiring layer and said thin film sealing layer has a surface roughness no greater than about 500 angstroms.
Claim 12
Dependent Claim
162 words
A reworkable hermetic module for encapsulating at least one microelectronic device having a thin film wiring layer comprising: a cap for said module having a mating surface extending uninterruptedly around the periphery of said cap; a substrate for said module, said substrate having a polished planar upper surface having a surface roughness no greater than about 500 angstroms upon which is deposited a thin film wiring layer for said microelectronic device comprising at least one polymeric dielectric material and at least one wiring path of metallic material, said substrate having a mating surface on said polished surface extending uninterruptedly around the periphery of said substrate; at least one thin film sealing layer on the mating surface of said substrate, said sealing layer having a thickness of less than about 0.001 in. and comprising successive layers of chromium, nickel and gold deposited directly on the mating surface; and a layer of said solder on said substrate forming a hermetic seal for said module.
Claim 13
Dependent Claim
162 words
A reworkable hermetic module for encapsulating at least one microelectronic device having a thin film wiring layer comprising: a cap for said module having a mating surface extending uninterruptedly around the periphery of said cap; a substrate for said module, said substrate having a polished planar upper surface having a surface roughness no greater than about 500 angstroms upon which is deposited a thin film wiring layer for said microelectronic device comprising at least one polymeric dielectric material and at least one wiring path of metallic material, said substrate having a mating surface on said polished surface extending uninterruptedly around the periphery of said substrate; at least one thin film sealing layer on the mating surface of said substrate, said sealing layer having a thickness of less than about 0.001 in. and comprising successive layers of chromium, nickel and gold deposited directly on the mating surface; and a layer of said solder on said substrate forming a hermetic seal for said module.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2001-04-27 | 2001-10-27 | 2002-04-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2005-04-27 | 2005-10-27 | 2006-04-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2009-04-27 | 2009-10-27 | 2010-04-28 | $7700.00 | Window Closed / Lapsed |