Patent JPS5036387A successfully refreshed from Google Patents.
US5229727A
Expired / Lapsed
US
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Hermetically sealed microstrip to microstrip transition for printed circuit fabrication
Assignee: Lockheed Martin Corp
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Filing: 1992-03-13
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Granted: 1993-07-20
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Expires: 2012-03-13
Abstract
Abstract The transition interconnects microstrip transmission lines whose finite-width conductors are formed on the upper surface and whose ground planes are formed on the under surface of a ceramic substrate. A patternable metallizable multilayer thick film dielectric is applied to the under surface of the ceramic substrate. The transition comprises first and second vias which penetrate the ceramic substrate inside and outside a hermetic enclosure. The upper ends of the vias are connected to the finite-width transmission line conductors, and the lower ends of the vias are interconnected by a finite-width conductor formed on the under surface of the substrate. The lower conductor then forms a transmission line of either a microstrip or coplanar nature with a ground plane available on the underside of the assembly. The thick film dielectric facilitates sealing, and attachment of a metal base plate. All steps are performed using thick film processing.
Inventors
- 👤 Richard D. Clark
- 👤 John A. MacDonald
- 👤 John A. Windyka
- 👤 Leonard H. Yorinks
- 👤 Stephen C. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:58
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/04
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
247 words
A microstrip to microstrip transition through an hermetic enclosure comprising in combination: A) a gas impermeable dielectric substrate, having patterned first and second metallizations on the upper and under surfaces, respectively B) a gas impermeable cover having a metallized under surface, C) a gas impermeable wall having conductive metal surfaces, solder sealed along the bottom to the first metallization and along the top to the metallization on said cover to hermetically enclose a portion of said substrate, D) a first and a second microstrip transmission line disposed upon said dielectric substrate, the first within and the second outside of said hermetic enclosure, respectively comprising (i) a first and a second conductor of finite width patterned from said first metallization, (ii) said dielectric substrate, and (iii) a ground plane patterned from said second metallization, E) a first and a second transitioning transmission line element respectively comprising a first and a second via hole, respectively within and outside of said enclosure, penetrating said dielectric substrate, and filled with conductive material, the upper ends thereof being joined to said first and second conductors respectively, and F) a third transitioning transmission line element on the underside of said substrate for interconnecting said first and second transitioning transmission line elements, comprising a third conductor of finite width patterned from said second metallization, placed in an opening in said second metallization and joined at one end to said first filled via hole and at the other end to said second filled via hole.
Claim 2
Dependent Claim
247 words
A microstrip to microstrip transition through an hermetic enclosure comprising in combination: A) a gas impermeable dielectric substrate, having patterned first and second metallizations on the upper and under surfaces, respectively B) a gas impermeable cover having a metallized under surface, C) a gas impermeable wall having conductive metal surfaces, solder sealed along the bottom to the first metallization and along the top to the metallization on said cover to hermetically enclose a portion of said substrate, D) a first and a second microstrip transmission line disposed upon said dielectric substrate, the first within and the second outside of said hermetic enclosure, respectively comprising (i) a first and a second conductor of finite width patterned from said first metallization, (ii) said dielectric substrate, and (iii) a ground plane patterned from said second metallization, E) a first and a second transitioning transmission line element respectively comprising a first and a second via hole, respectively within and outside of said enclosure, penetrating said dielectric substrate, and filled with conductive material, the upper ends thereof being joined to said first and second conductors respectively, and F) a third transitioning transmission line element on the underside of said substrate for interconnecting said first and second transitioning transmission line elements, comprising a third conductor of finite width patterned from said second metallization, placed in an opening in said second metallization and joined at one end to said first filled via hole and at the other end to said second filled via hole.
Claim 3
Dependent Claim
69 words
The arrangement set forth in claim 1, having in addition thereto: A) a dielectric layer applied to the under surface of said substrate to seal the under surface; B) a metal film applied to said applied dielectric layer; and C) a metal base plate soldered to said metal film and connected to said patterned second metallization, said metal base plate establishing a substantial RF field with said third conductor.
Claim 4
Dependent Claim
25 words
The arrangement set forth in claim 2, wherein said dielectric layer is a photolithographically patterned glass material suitable for thick film processing and subsequent metallization.
Claim 5
Dependent Claim
39 words
The arrangement set forth in claim 3, wherein said third conductor is patterned at the joints to said via holes to provide shunt capacitance to compensate for the inductance of said via holes over a desired band of frequencies.
Claim 6
Dependent Claim
37 words
The arrangement set forth in claim 4, wherein via holes are provided adjacent said first and said second via holes respectively, and grounded to said metal base plate for suppression of parallel plate modes in said substrate.
Claim 7
Dependent Claim
42 words
The arrangement set forth in claim 5, wherein said first metallization is patterned to be coextensive with said wall to facilitate bonding said wall to said dielectric substrate, and wherein vias are provided to connect the wall to the metal base plate.
Claim 8
Dependent Claim
38 words
The arrangement set forth in claim 1, wherein said transitioning third transmission line also comprises a coplanar ground spaced from said third conductor of finite width and patterned from said second metallization to establish substantial coplanar RF fields.
Claim 9
Dependent Claim
24 words
The arrangement set forth in claim 7, wherein the metallization on said wall forms with said third conductor significant RF fields through said dielectric.
Claim 10
Dependent Claim
39 words
The arrangement set forth in claim 8, wherein said third conductor is patterned at the joints to said via holes to provide shunt capacitance to compensate for the inductance of said via holes over a desired band of frequencies.
Claim 11
Dependent Claim
25 words
The arrangement set forth in claim 9, wherein a dielectric layer is applied to the under surface of said substrate for sealing and surface passivation.
Claim 12
Dependent Claim
25 words
The arrangement set forth in claim 10, wherein said dielectric layer is a photolithographically patterned glass material suitable for thick film processing and subsequent metallization.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-07-19 | 1997-01-18 | 1997-07-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-07-19 | 2001-01-18 | 2001-07-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-07-19 | 2005-01-18 | 2005-07-20 | $7700.00 | Window Closed / Lapsed |