Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
54 words
A metal matrix composite of low density, high thermal and electrical conductivity, and a coefficient of thermal expansion in the range from approximately 4.5 to 12 parts per million per degree Centigrade, consisting of a matrix of aluminum to which Beta-Eucryptite has been added in a range from 60 to 40 percent by volume.
Claim 2
Dependent Claim
54 words
A metal matrix composite of low density, high thermal and electrical conductivity, and a coefficient of thermal expansion in the range from approximately 4.5 to 12 parts per million per degree Centigrade, consisting of a matrix of aluminum to which Beta-Eucryptite has been added in a range from 60 to 40 percent by volume.
Claim 3
Dependent Claim
67 words
In combination: a substrate of a metal matrix composite material of low density, high thermal and electrical conductivity and a coefficient of thermal expansion in the range of from approximately 4.5 to 8.5 parts per million per degree centigrade consisting of a matrix of aluminum to which Beta-Eucryptite has been added in a range from 60 to 45 percent by volume, and an electronic semiconductor bonded thereto.
Claim 4
Dependent Claim
67 words
In combination: a substrate of a metal matrix composite material of low density, high thermal and electrical conductivity and a coefficient of thermal expansion in the range of from approximately 4.5 to 8.5 parts per million per degree centigrade consisting of a matrix of aluminum to which Beta-Eucryptite has been added in a range from 60 to 45 percent by volume, and an electronic semiconductor bonded thereto.
Claim 5
Dependent Claim
35 words
The configuration set forth in claim 2 wherein: the surface of said substrate is clad with a thin aluminum layer to seal the surface, said layer providing an electrically conductive bond to said electronic semiconductor.
Claim 6
Dependent Claim
41 words
The combination as set forth in claim 2, wherein: the surface of said substrate is clad with a thin aluminum layer to seal the surface, the layer being anodized, said anodized layer providing an electrically insulating bond to said electronic semiconductor.
Claim 7
Dependent Claim
34 words
The combination set forth in claim 2 wherein: the percentage of Beta-Eucryptite is from 55 to 45 volume percent, and said semiconductor is a member of the class including, silicon, germanium, and gallium arsenide.
Claim 8
Dependent Claim
57 words
In a package for electronic components, the combination comprising: a metal matrix composite base consisting of a matrix of aluminum to which Beta Eucryptite has been added in a range between 55 and 45 per cent by volume; a lead frame of alumina sealed to said base for supporting leads for connection to a contained electronic component.
Claim 9
Dependent Claim
57 words
In a package for electronic components, the combination comprising: a metal matrix composite base consisting of a matrix of aluminum to which Beta Eucryptite has been added in a range between 55 and 45 per cent by volume; a lead frame of alumina sealed to said base for supporting leads for connection to a contained electronic component.
Claim 10
Dependent Claim
54 words
The combination set forth in claim 6 having in addition thereto: a ring frame of alumina sealed to said lead frame; and a metal matrix composite cover sealed to said ring frame comprising a matrix of aluminum to which Beta Eucryptite has been added in a range between 55 and 45 percent by volume.
Claim 11
Dependent Claim
45 words
The combination set forth in claim 7 having in addition thereto: an electronic semiconductor bonded to the surface of said base on the package interior, and said base is clad with a thin aluminum layer to provide an electrically conductive bond to said electronic semiconductor.
Claim 12
Dependent Claim
53 words
The combination set forth in claim 7, having in addition thereto: (a) an electronic semiconductor bonded to the surface of said base on the package interior, and (b) said base is clad with a thin aluminum layer, the surface being anodized, said anodized layer providing an electrically insulating bond to said electronic semiconductor.